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    Google BDS3000BWES-C

    NEST BATTERY PROTECT 2 PACK
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    Eaton Corporation BDS300-48

    300A FIX TRIP CIRCUIT BREAKER
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    BDS300 Datasheets Context Search

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    R505

    Abstract: BDS300
    Text: Thick Film Power Resistors Type BDS300 Series Type BDS300 Series Characteristics Electrical Resistance Values: Resistance Tolerance: Temperature Coefficient: Power Rating: Capacitance / Mass: Capacitance / Parallel: Inductance: Maximum Working Voltage: Insulation Voltage:


    Original     		BDS300 1000m) R505 PDF

    MJE200

    Abstract: MJE210 JE230
    Text: MJE200, MJE210 continued ELECTRICAL CH ARACTERISTICS ( T q * 2 5 ° C u nless o th erw ise n oted) C ha rac teristic Sym bol O F F C H A R A C T E R IS T IC S C olle cto r*?:m itter S u s t a in in g V o lt a g e U ) (I q - 10 m A d c , I b = 0) v C E O is u s )


    OCR Scan     		MJE200, MJE210 MJE200 MJE210 JE230 PDF

    Untitled

    Abstract: No abstract text available
    Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Resistors > Product Feature Selector > Product Details BDS2A30010RK Product Details


    Original     		BDS2A30010RK BDS2A30010RK PDF

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt PDF