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    BDT82 TRANSISTOR Search Results

    BDT82 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BDT82 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT86 equivalent

    Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor
    Text: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.


    Original     		PDF BDT82 BDT84 BDT86 BDT88 BDT81 BDT83 BDT85 BDT87 BDT86 equivalent BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor

    SM2174

    Abstract: SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (Hz) >CBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		PDF BDT56 BDT58 BD907 BD908 MJE1291 MJE1661 SM2174 SM2184 2N3055H MOTOROLA 2SD878 mj2955 TO-218 BDY73 BD130 BDY20 2SD151 2SA1042

    BDT85

    Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87


    Original     		PDF BDT81/83/85/87 BDT81; BDT83; BDT85; BDT87 BDT82/84/86/88 BDT81 BDT83 BDT85 BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 O-220 BDT81, BDT83, BDT85 BDT87.

    BDT85

    Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
    Text: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT85 BDT81 BDT88 BDT84 BDT87 BDT82 BDT83

    Untitled

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81

    Untitled

    Abstract: No abstract text available
    Text: BDT82; BDT84 BDT86; BDT88 _ y v SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general am plifier and switching applications. N-P-N complements are BD T81, BD T83, B D T 85 and BDT87.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 O-220 BDT87. BDT86 00347b2

    3m421

    Abstract: "Silicon Power Transistors" T8480
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 -31-Z maxZ92354 3m421 "Silicon Power Transistors" T8480

    BDT84

    Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060
    Text: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 TCJ-220 BDT81, BDT83, BDT85 BDT87. BDT82 BDT88 tcj 103 BDT81 BDT82 BDT83 BDT86 BDT87 MSA060

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 T-31-23 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: N AMER PHILIPS/DISCRETE S5E D • ^53=131 OOlTäS.S “J ■ Jl ‘' BDT82; BDT84 BDT86; BDT88 T - 3 3 - 2 3 SILICON POWER TRANSISTORS P-N-P ep itaxial base transistors in a T 0 - 2 2 0 plastic envelope, designed fo r use in audio o u tp u t stages and general a m p lifie r and switching applications.


    OCR Scan     		PDF fahS31il BDT82; BDT84 BDT86; BDT88 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87

    BDT84

    Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 00H330b aTO-220 BDT82, BDT84, BDT86 BDT88. BDT84 PHILIPS 1N BDT88 BDT81 BDT82 BDT85 BDT87 10-J11

    BDT88

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT88

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8