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    Broadcom Limited MSA-0600-GP4

    IC RF AMP 100MHZ-1.5GHZ
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    CUI Inc EMSA060300-P6P-SZ

    AC/DC WALL MOUNT ADAPTER 6V 18W
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    CUI Inc EMSA060300-P5P-SZ

    AC/DC WALL MOUNT ADAPTER 6V 18W
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    AC/DC WALL MOUNT ADAPTER 6V 18W
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    MSA060 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSA-0600 Agilent Technologies Cascadable Silicon Bipolar MMIC Amplifier Original PDF
    MSA-0600-GP2 Avantek MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Scan PDF
    MSA-0600-GP4 Agilent Technologies Cascadable Silicon Bipolar MMIC Amplifier Original PDF
    MSA-0600-GP4 Avago Technologies Cascadable Silicon Bipolar MMIC Ampifier Original PDF
    MSA-0600-GP4 Avantek MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Scan PDF
    MSA0600-GP4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MSA-0600-GP6 Avantek MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Scan PDF

    MSA060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP MMIC INA

    Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
    Text: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF


    Original     		PDF 20-Nov-97 docs\amps\00 docs\amps\01 docs\amps\06 MGA-87563 docs\amps\10 docs\amps\11 HP MMIC INA mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier

    iom16c

    Abstract: mitsubishi msa0600 intrm16c M30620T-RPD-E mitsubishi rs232 MSA0600 LED monitor MSA-06 MITSUBISHI Digital Echo POW10
    Text: Chip No Using RTXC Real Time OS on the M16C functions for task creation, task deletion, task suspension, and task starting. 1. ABSTRACT The use of Real Time Operating Systems RTOS in embedded systems has many advantages. An RTOS allows the developer to define a task as if it


    Original     		PDF Jun-99 iom16c mitsubishi msa0600 intrm16c M30620T-RPD-E mitsubishi rs232 MSA0600 LED monitor MSA-06 MITSUBISHI Digital Echo POW10

    Triac slow on

    Abstract: BT136 application note OM1654 triac bt151 bt134 triac dimmer triac snubber calculation triac snubber BT151 triac pin diagram of diac bt136 BT151 motor speed control
    Text: Philips Semiconductors Thyristors and Triacs Philips Semiconductors publishes many Technical Publications each year on various aspects of power semiconductors. All the publications relevant to thyristors and triacs are reproduced in this chapter. They provide


    Original     		PDF

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


    OCR Scan     		PDF TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


    OCR Scan     		PDF 7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062

    bd947

    Abstract: b0945 BD945 m lc 945 BD943 BD944
    Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		PDF BD943 BD945 BD947 7110fllT\ 043070T[ BD944; T-33-17 BD945 bd947 b0945 m lc 945 BD944

    transistor GR 338

    Abstract: BTW58 BTW58-1000R lt 332 diode A 1098 LT BTW58 1200 1300R Transistor sae 103 Gate Turn-Off Thyristors IEC134
    Text: SÔE D PHILIPS INTERNATIONAL 711002b DO S 3 1 E b 2flT H P H I N BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal


    OCR Scan     		PDF 711002b S31Eb BTW58 T0-220AB BTW58â 1000R 1300R transistor GR 338 BTW58-1000R lt 332 diode A 1098 LT BTW58 1200 Transistor sae 103 Gate Turn-Off Thyristors IEC134

    M1434

    Abstract: Gate Turn-Off Thyristors LS025 BTV58 BTV58-600R 600R CG10A 1000R
    Text: PHILIPS 5ÔE D INTERNATIONAL • 7110ÖEb 0053003 OtM Bi PHIN BTV58 SERIES J \ _ FAST GATE TURN-OFF THYRISTORS T h y risto rs in T 0 - 2 2 0 A B envelopes capable o f being turned both on and o f f via the gate. T h e y are suitable fo r use in high-frequency inverters, pow er supplies, m otor c o n tro l etc. T h e devices have no


    OCR Scan     		PDF BTV58 T0-220AB BTV58â 1000R 711005b 00S30TM M1434 Gate Turn-Off Thyristors LS025 BTV58-600R 600R CG10A 1000R

    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c

    TIP126

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: _ PHILIPS INTERNATIONAL TIP125 TIP126 TIP127 J{ SbE ]> • 711DÖEL 0D435bfl M b 4 M P H I N T-33-ZI SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxiai-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, TIP121


    OCR Scan     		PDF TIP125 TIP126 TIP127 0D435bfl T-33-ZI TIP120, TIP121 TIP122. O-220. TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    BTV58-600R

    Abstract: 1000R BTV58
    Text: SfiE » PHILIPS INTERNATIONAL • 7 1 1 D Ö E b 0 0 5 3 0 0 3 QbM « P H I N BTV58 SERIES J v._ FAST GATE TURN-OFF THYRISTORS Thyristors in T 0-22 0A B envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, power supplies, m otor control etc. The devices have no


    OCR Scan     		PDF BTV58 BTV58-- O-220AB. 711002b M1610 BTV58-600R 1000R

    D 1991 AR

    Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
    Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0


    OCR Scan     		PDF BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode

    bdt65b

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are


    OCR Scan     		PDF BDT65; BDT65B; BDT64; BDT65 O-220. 7Z82329 bdt65b

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    BT145

    Abstract: No abstract text available
    Text: N APIER P H IL IP S/ D IS CR ET E bTE D bbS3T31 00275bfi flflT • APX BT145 SERIES THYRISTORS Glass-passivated 25 ampere thyristors intended for use in applications involving high fatigue stress due to thermal cycling and repeated switching. These thyristors feature a high surge current


    OCR Scan     		PDF bbS3T31 00275bfi BT145 BT145-500R

    BD201

    Abstract: BD202 BDx77 BD203 BD204 BDX78
    Text: SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith their PNP complements B D 202, B D 204 and B D X 78 they are prim arily intended fo r use in hi-fi equipment delivering an o utpu t o f 15 to 25 W into a 4 £2 or 8 O load.


    OCR Scan     		PDF BD202, BD204 BDX78 BD201 BD203 BDX77 O-220. 7Z62391 BD202 BDx77

    BU603

    Abstract: No abstract text available
    Text: i i N AMER PHILIPS/DISCRETE b'iE D • bbSa^l IAPX 0020270 bib '' BU603 SILICO N DIFFUSED PO W ER T R A N SIST O R S High-voltage, high-speed, glass-passivated npn power transistors in a TO 220 envelope intended for use in power supplies and deflection circuits for colour receivers and monitors.


    OCR Scan     		PDF BU603 bbS3T31 BU603

    F266

    Abstract: AF266 BUV26 BUV26A
    Text: I I D N AUER PHIL I P S / D I S C R E T E 0020440 740 BUV26 BUV26A ^ 5 3 1 3 1 J SILICON POWER TRANSISTORS High-speed, glass-passivated npn pow er transistors in a T 0 -2 2 0 envelope intended fo r fast sw itching applications such as high frequency and e fficie n cy converters, sw itching regulators and m o to r c o n tro l.


    OCR Scan     		PDF b53131 0D2fl44fl BUV26 BUV26A T0-220 00E64S1 7Z89210 200/iH F266 AF266 BUV26A

    BDT84

    Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060
    Text: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 TCJ-220 BDT81, BDT83, BDT85 BDT87. BDT82 BDT88 tcj 103 BDT81 BDT82 BDT83 BDT86 BDT87 MSA060

    AVANTEK

    Abstract: Avantek amplifier AVANTEK MSA MSA-0600 MSA-0600-GP2 MSA-0600-GP4 MSA-0600-GP6
    Text: O a v a n te k MSA-0600 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline' Features • Cascadable 50 £2 Gain Block • Low Operating Voltage 3.5 V typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5 dB typical at 0.5 GHz


    OCR Scan     		PDF MSA-0600 MSA-0600 AVANTEK Avantek amplifier AVANTEK MSA MSA-0600-GP2 MSA-0600-GP4 MSA-0600-GP6

    MMIC sot-363

    Abstract: msa0304 Micro-X Ceramic msa-0835 MSA0270
    Text: warn H E W L E T T f t x f l PACKARD RFIC and MMIC Amplifiers Selection Guides Fixed Gain RFIC Amplifiers in order from lowest to highest frequency Part Number Type Frequency NF Range (GHz) (dB) Gain P ldB (dB) (dBm) MSA-2111 MSA-3111 MSA-3135 MSA-3185 MSA-3186


    OCR Scan     		PDF IVA-05128 IVA-05208 IVA-05228 IVA-14208 IVA-14228 MMIC sot-363 msa0304 Micro-X Ceramic msa-0835 MSA0270

    philips TIP117

    Abstract: tip110 st TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
    Text: TIP115 TIP116 TIP117 PHILIPS INTERN A T I O N A L 5bE ]> • 7110Û5L 004355b SILICON DARLINGTON POWER TRANSISTORS 742 ■ PHIN T-33- 3 I P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T O -2 2 0 A B plastic envelope. N-P-N complements are


    OCR Scan     		PDF TIP115 TIP116 TIP117 00M3SSL O-220AB TIP110, TIP111 TIP112. philips TIP117 tip110 st TIP110 TIP112 TIP117

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CMPNTS blE D T fiü l H E W L E T T mL'HMP A C K A R D • 4HH7S64 0D1DD1S Mb4 « H P A MSA-0600 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features • • • • • Chip Outline1 Cascadable 50 Q Gain Block


    OCR Scan     		PDF 4HH7S64 MSA-0600 MSA-0600

    BUV26

    Abstract: BUV26A 11/BUV26
    Text: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.


    OCR Scan     		PDF 711002b D031GbT BUV26 BUV26A T0-220 O-220AB. 711005b BUV26A 11/BUV26