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    BDT84 Search Results

    BDT84 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT84 Philips Semiconductors Silicon Power Transistors Original PDF
    BDT84 Philips Semiconductors Silicon Power Transistors Original PDF
    BDT84 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT84 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT84 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT84 Philips Semiconductors SILICON POWER TRANSISTORS Scan PDF
    BDT84F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT84F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT84F Philips Semiconductors SILICON EPITAXIAL POWER TRANSISTORS Scan PDF

    BDT84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDT88F

    Abstract: BDT82F BDT84F BDT86F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F


    Original     		PDF BDT82F/84F/86F/88F BDT82F; BDT84F; -100V BDT86F; -120V BDT88F BDT81F/83F/85F/87F BDT82F BDT88F BDT82F BDT84F BDT86F

    BDT86 equivalent

    Abstract: BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor
    Text: PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications.


    Original     		PDF BDT82 BDT84 BDT86 BDT88 BDT81 BDT83 BDT85 BDT87 BDT86 equivalent BDT88 BDT84 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 BDT82 Transistor

    2SD556 sanken

    Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15


    Original     		PDF BDW41 BDW46 BDT53 SM2176 SM2183 BD909 BD910 SDT9803 2SD556 sanken SDT9207 2sd556 KT819G SDT9202 Bd184 KT818G 2N3055-7

    MAX2136

    Abstract: t331t BDT81F BDT82F BDT83F BDT84F BDT86F BDT87F BDT88F
    Text: BDT81F; BDT83F BDT85F; BDT87F PHILIPS international SbE D • VLlOflEh 0 Q 4 3 3 1 S LS'i ■ PHIN SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F.


    OCR Scan     		PDF BDT81F; BDT83F BPT85F; BDT87F 0D4331S OT186 BDT82F, BDT84F, BDT86F BDT88F. MAX2136 t331t BDT81F BDT82F BDT83F BDT84F BDT87F BDT88F

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: N AMER PHILIPS/DISCRETE S5E D • ^53=131 OOlTäS.S “J ■ Jl ‘' BDT82; BDT84 BDT86; BDT88 T - 3 3 - 2 3 SILICON POWER TRANSISTORS P-N-P ep itaxial base transistors in a T 0 - 2 2 0 plastic envelope, designed fo r use in audio o u tp u t stages and general a m p lifie r and switching applications.


    OCR Scan     		PDF fahS31il BDT82; BDT84 BDT86; BDT88 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87

    BDT84

    Abstract: BDT88 tcj 103 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 MSA060
    Text: BDT82; BDT84 BDT86; BDT88 SILICON POW ER T R A N SIST O R S P-N-P epitaxial base transistors in a TCJ-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications. N-P-N complements are B D T 8 1, B D T 8 3, B D T 8 5 and BD T87.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 TCJ-220 BDT81, BDT83, BDT85 BDT87. BDT82 BDT88 tcj 103 BDT81 BDT82 BDT83 BDT86 BDT87 MSA060

    BDT81F

    Abstract: BDT82F BDT83F BDT84F BDT85F BDT86F BDT87F BDT88F MAX2136
    Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5 bE D • 711002b 0043320 725 H I P H I N T -37-11 SILICON EPITAXIAL POWER TRANSISTORS PIMP silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


    OCR Scan     		PDF BDT82F; BDT84F BDT86F; BDT88F 711002b T-33-/? OT186 BDT81F, BDT83F, BDT85F BDT81F BDT82F BDT83F BDT86F BDT87F BDT88F MAX2136

    Untitled

    Abstract: No abstract text available
    Text: BDT81F; BDT83F l^BDT85F; BDT87F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T 186 envelope with an electrically insulated mounting base. PNP complements are BDT82F, BDT84F, BDT86F and BDT88F. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF BDT81F; BDT83F BDT85F; BDT87F BDT82F, BDT84F, BDT86F BDT88F. BDT81F bb53T31

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • 1^53=131 OOlTfiSS T ■ BDT82; BDT84 BDT86; BDT88 A T - 33-23 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a TO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 O-220 BDT81, BDT83, BDT85 BDT87.

    BDT88F

    Abstract: 36 TI BBL BDT86
    Text: BDT82F; BDT84F BDT86F; BDT88F PHILIPS INTERNATIONAL 5bE » • 711üfl2b D D M 3 3 2 Q 72S ■ PH IN T— SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BDT81F, BDT83F, BD T85F and BDT87F.


    OCR Scan     		PDF BDT82F; BDT84F BDT86F; BDT88F OT186 BDT81F, BDT83F, BDT87F. BDT82F OT186. BDT88F 36 TI BBL BDT86

    3m421

    Abstract: "Silicon Power Transistors" T8480
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • TllDflEb D D M 3 3 m 421 H P H I N T -31-Z 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0 -2 2 0 plastic envelope, designed fo r use in audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 -31-Z maxZ92354 3m421 "Silicon Power Transistors" T8480

    BDT85

    Abstract: BDT81 BDT88 BDT84 BDT87 BDT82 BDT83 BDT86
    Text: J BDT81; BDT83 BDT85; BDT87 ^ SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in a T0-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT85 BDT81 BDT88 BDT84 BDT87 BDT82 BDT83

    BDT88

    Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
    Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT82; BDT84 BDT86; BDT88 T-31-23 T0-220 BDT81, BDT83, BDT85 BDT87. BDT88 BDT81 BDT82 BDT83 BDT86 BDT87

    Untitled

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 _ y v SILICON POWER TRANSISTORS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed fo r use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT82, BDT84, BDT86 and BDT88.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BDT84

    Abstract: PHILIPS 1N BDT88 BDT81 BDT82 BDT83 BDT85 BDT86 BDT87 10-J11
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INT ERN ATI ON AL SLE T> m 7110â2b 00H330b 355 • PHIN SILICON PO W ER TRANSISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 00H330b aTO-220 BDT82, BDT84, BDT86 BDT88. BDT84 PHILIPS 1N BDT88 BDT81 BDT82 BDT85 BDT87 10-J11

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BDT88

    Abstract: No abstract text available
    Text: BDT81; BDT83 BDT85; BDT87 PHILIPS INTERNATIONAL SbE T> m 2 7 1 1 0 0 2 b 0 0 4 3 3 0 b 3SS « P H I N SILICON POW ER TRAN SISTO RS N-P-N epitaxial base transistors in aTO-220 plastic envelope, designed for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT81; BDT83 BDT85; BDT87 aTO-220 BDT82, BDT84, BDT86 BDT88. BDT81 BDT88

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G