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    BDV64B TRANSISTOR Search Results

    BDV64B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BDV64B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B

    BDV64B

    Abstract: BDV65B bdv64b transistor
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor

    BDV64B

    Abstract: BDV65B
    Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • w DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64B BDV65B

    4422 datasheet

    Abstract: ic 701 BDV64B BDV65B
    Text: NPN Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain • DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60–80–100–120 VOLTS


    Original     		PDF BDV65B BDV64B r14525 BDV65B/D 4422 datasheet ic 701 BDV64B BDV65B

    Motorola Power Transistor Data Book

    Abstract: Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


    Original     		PDF BDV65B/D BDV65B BDV64B BDV65B/D* Motorola Power Transistor Data Book Motorola Bipolar Power Transistor Data MOTOROLA TRANSISTOR T2 03 transistor BDV65B bipolar transistor Motorola 801 TRansistor L 701 power transistors 638 POWER TRANSISTOR MOTOROLA

    BDV65B equivalent

    Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340

    BDV64B

    Abstract: MOTOROLA TRANSISTOR BDV65B bdv64b transistor
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc


    Original     		PDF BDV65B/D BDV65B BDV64B BDV65B/D* BDV64B MOTOROLA TRANSISTOR BDV65B bdv64b transistor

    bdv64b

    Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


    Original     		PDF O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B

    transistors BDV64B

    Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D transistors BDV64B BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64

    Untitled

    Abstract: No abstract text available
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65Bâ BDV64Bâ BDV65B/D

    motorola 572 transistor

    Abstract: MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF BDV65B/D* BDV65B/D motorola 572 transistor MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B

    transistors BDV64B

    Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
    Text: SavantIC Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications.


    Original     		PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64A BDV64B BDV64C transistors BDV64B BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode

    BDV64

    Abstract: transistors BDV64B BDV64B BDV64A BDV64C
    Text: Inchange Semiconductor Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV65/65A/65B/65C ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in general purpose amplifier


    Original     		PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64B BDV64C BDV64A BDV64 transistors BDV64B BDV64B BDV64A BDV64C

    BDV65, BDV64

    Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
    Text: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF b3b7254 T-33-tf T-33-U BDV65 BDV65A BDV65B BDV64 BDV64A BDV64B BDV64C BDV65, BDV64 BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC

    Untitled

    Abstract: No abstract text available
    Text: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. N-P-N complements are BDV65,65A, 65B and 65C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDV64; BDV64B; BDV65 BDV64 bbS3T31 Q0347TE

    transistors BDV64B

    Abstract: bdv64b transistor
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M DM BDV65B Com plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applica­ tions. • • High DC Current Gain HFE = 1000 min. @ 5 Adc


    OCR Scan     		PDF BDV65B BDV64B BDV65B transistors BDV64B bdv64b transistor

    Y182

    Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
    Text: i BDV64; 64A _ I l BDV64B; 64C PHILIPS INTERNATIONAL SbE D • 711DÖ2b 0D43342 3Tb ■ PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDV64; BDV64B; 0D43342 BDV64 -BDV64B: 711002b T-33-31 Y182 transistor K 1413 bdv64 transistors BDV64B BDV64B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BDV65B/D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B Com plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applica­ tions. • • DARLINGTONS 10 AMPERES


    OCR Scan     		PDF BDV65B/D BDV65B BDV64B 340D-02

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Text: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


    OCR Scan     		PDF O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C

    bdv64b transistor

    Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
    Text: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n olithic D arlington circu it fo r audio o u tp u t stages and general a m p lifie r and switching applications. N-P-N complements are B D V 65, 65A, 65B and 65C.


    OCR Scan     		PDF BDV64; BDV64B; BDV65, BDV64 7Z9669S bdv64b transistor ic 7493 BDV64B transistors BDV64B BDV65 7Z77491

    BDV64

    Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
    Text: f BDV64; 64A ; 64C PHILIPS INTERNATIONAL 5bE J> m 711002b 0G43342 3Tb • PHIN T - 3 3 -3 1 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDV64; BDV64B; 711002b T-33-3! BDV65, BDV64 7Z7749I- philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C