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    BDW 34 Search Results

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    BDW 34 Price and Stock

    Amphenol ProLabs SFP-1GB-DW34-80-C

    MSA and TAA Compliant 1000Base-D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-1GB-DW34-80-C 1
    • 1 $562.5
    • 10 $562.5
    • 100 $534.375
    • 1000 $562.5
    • 10000 $562.5
    		Buy Now

    Amphenol ProLabs SFP-1GB-DW34-120-C

    MSA and TAA 1000Base-DWDM SFP Tr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-1GB-DW34-120-C 1
    • 1 $2406.25
    • 10 $2406.25
    • 100 $2285.9375
    • 1000 $2406.25
    • 10000 $2406.25
    		Buy Now

    Amphenol ProLabs SFP-10GB-DW34-80-C

    MSA and TAA 10GBase-DWDM SFP+ Tr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SFP-10GB-DW34-80-C 1
    • 1 $875
    • 10 $875
    • 100 $831.25
    • 1000 $875
    • 10000 $875
    		Buy Now

    Amphenol ProLabs XFP-10GB-DW34-80-C

    MSA and TAA 10GBase-DWDM XFP Tra
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XFP-10GB-DW34-80-C 1
    • 1 $1000
    • 10 $1000
    • 100 $950
    • 1000 $1000
    • 10000 $1000
    		Buy Now

    Amphenol ProLabs XFP-10GB-DW34-100-C

    MSA and TAA 10GBase-DWDM 100GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XFP-10GB-DW34-100-C 1
    • 1 $4468.75
    • 10 $4468.75
    • 100 $4245.3125
    • 1000 $4468.75
    • 10000 $4468.75
    		Buy Now
    Find more BDW 34 price and stock on Findchips.com

    BDW 34 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDW34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDW34 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDW34 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    BDW342 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

    BDW 34 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDW92

    Abstract: BDW91 bdw91c
    Text: rr r 7# s g s -th o m s o n [M ^ (q [IL Ì^ (ò )[* S ^ b d w BDW 9i 92 MEDIUM POWER DARLINGTON DES CRIPTIO N The BDW91 is a silicon epitaxial base NPN transis­ tor in monolithic Darlington configuration mounted in Jedec TO-39 metal case. It is intended for use in


    OCR Scan     		BDW91 BDW92. BDW92) BDW91) BDW91/BDW92 G-393Î BDW92 bdw91c PDF

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


    OCR Scan     		E3B33c 000DQ5M lo-32 8 pin ic 3773 PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 PDF

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan     		BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140 PDF

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072 PDF

    BU 290A

    Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N


    OCR Scan     		PDF

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a PDF

    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


    OCR Scan     		2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2 PDF

    bdx340

    Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
    Text: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8


    OCR Scan     		2N6284 bdx340 bdw 34 a mj 1001 6282 TIP-142 BDV65 BDW93 PDF

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


    OCR Scan     		625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 PDF

    BUX47A

    Abstract: BUX47 BUX47B BY205-400
    Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Bow94c

    Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222 PDF

    BU406

    Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
    Text: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature


    OCR Scan     		GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors PDF

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


    OCR Scan     		340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800 PDF

    Bow94c

    Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G PDF

    bow94c

    Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		IRF530FI SGSP361 SGSP461 BUZ21 BUZ25 IRF142 IRF542 IRF542FI IRF152 IRFP152 bow94c BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SMD SJ 87 b0334 BUZ10 PDF

    transistors bu 407

    Abstract: Transistors BD 330 bdx 330
    Text: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •


    OCR Scan     		cltI17Bt. 003titi3S BU406, BU407 10-Degree transistors bu 407 Transistors BD 330 bdx 330 PDF

    BD901

    Abstract: BD897 case BD901 1N914 BD895 BD895A BD897A BD899 BD899A D03bt
    Text: TEXAS I N S T R -COPTO* b5 D eT | ODBbS'i'i 62C 36599 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 • 70 W at 2 5 °C Case Temperature T -3 3 -2 9 • 8 A Continuous Collector Current


    OCR Scan     		BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 1N914 BD897A BD899 BD899A D03bt PDF

    BUX47A

    Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
    Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current


    OCR Scan     		tbl75b BUX47, BUX47A, BUX47B bux47a 1ux47b BUX47 t-35-/s BUX47A BY205-400 silicon power transistors T35 ET PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL Nominal Impedance Ohms Interface Dimensions MIL-STD-348A, 50 Frequency Range (GHz) DC to _18_ B Sea Level 500 VSWR 1.05+.005f(GHz) Insertion Loss (dB MAX) .03x Vf(GHz) RF Leakage (dB MIN) -[90-f(GHz)] Corona. 70,000 Ft (VRMS MIN) 375 (VRMS MIN) 0 Sea Level


    OCR Scan     		MIL-STD-348A, PDF

    D895

    Abstract: BD 895 bdw 34 a
    Text: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current


    OCR Scan     		BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    6v8ca

    Abstract: BDP 162 bel bfw 10 BdP 285 150CA marking MGW bel bfw 10-0a BFW 100A bfx transil SM15T
    Text: SGS-THOMSON ;y SURFACE MOUNT DEVICES ' GENERAL PURPOSE & INDUSTRIAL TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Type Marking 'RM @ V RM @ V BR * (V) •r max Unidirec­ tional Unidirec­ tional Bidirec­ tional Bidirec­ tional <*A) (V) min nom max (mA) V(CL) @ 'pp


    OCR Scan     		SM15T6V8 SM15T6V8C SM15T SM15T7V5 SM15T7V5C SM15T7V5A 6v8ca BDP 162 bel bfw 10 BdP 285 150CA marking MGW bel bfw 10-0a BFW 100A bfx transil PDF