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    Lovato Electric Inc KBE2L11N

    PL ROLLER LEV PLUNGER 1NO+1NC LEN1/2 NPT | LOVATO Electric KBE2L11N
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    RS KBE2L11N Bulk 7 Weeks 1
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    Lovato Electric Inc KBE2L02N

    PLAST ROLLER LEVER PLUNGER 2NC LEN1/2NPT | LOVATO Electric KBE2L02N
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    RS KBE2L02N Bulk 7 Weeks 1
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    Lovato Electric Inc KBE2L20N

    PLAST ROLLER LEVER PLUNGER 2NO LEN1/2NPT | LOVATO Electric KBE2L20N
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    RS KBE2L20N Bulk 7 Weeks 1
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    Lovato Electric Inc KBE2L03N

    PLAST ROLLER LEVER PLUNGER 3NC LEN1/2NPT | LOVATO Electric KBE2L03N
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    RS KBE2L03N Bulk 7 Weeks 1
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    Lovato Electric Inc KBE2L21N

    PL ROLLER LEV PLUNGER 1NO+1NC LEN1/2 NPT | LOVATO Electric KBE2L21N
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    RS KBE2L21N Bulk 7 Weeks 1
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    BE2L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A12L

    Abstract: A14L IDT70V3579 IDT70V3579S
    Text: HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 5/6ns max. Pipelined output mode


    Original     		IDT70V3579S 100MHz 70V3579 36-Bit) A12L A14L IDT70V3579 IDT70V3579S PDF

    70V3569

    Abstract: A12L A13L IDT70V3569 IDT70V3569S
    Text: HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3569S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access


    Original     		IDT70V3569S 133MHz 133MHz wri12/99: 133MHz, 70V3569 A12L A13L IDT70V3569 IDT70V3569S PDF

    schema UP 5135

    Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
    Text: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €


    Original     		PDF

    tdc 310

    Abstract: ba6l BA6R 10 35L U1
    Text: HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original     		200MHz 166MHz 133MHz) 14Gbps SMEN-01-04 BF-208 tdc 310 ba6l BA6R 10 35L U1 PDF

    ba6l

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks – 2 megabits of memory on chip


    Original     		200MHz 166MHz 133MHz) 14Gbps SMEN-01-05 SMEN-01-04 ba6l PDF

    CYD01S36V

    Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA
    Text: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and


    Original     		CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 32K/64K/128K/256K/512 FLEx36 18-Mbit CYD01S36V CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA PDF

    IDT70T659

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ Busy and Interrupt Flags On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port


    Original     		256/128K 100mV) 150mV 256-ball 208-pin 208-ball IDT70T659 PDF

    10 35L U4

    Abstract: 70V7589 IDT70V7589 IDT70V7589S BA5L
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7589S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 1K x 36 banks


    Original     		IDT70V7589S 166MHz 133MHz) 12Gbps SMEN-01-05 SMEN-01-04 10 35L U4 70V7589 IDT70V7589 IDT70V7589S BA5L PDF

    IDT70T659

    Abstract: 9S12 CAN 9S12
    Text: Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT70T651/9S HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE ◆ On-chip port arbitration logic Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port


    Original     		IDT70T651/9S 256/128K 100mV) 150mV 256-ball 208-pin 208-ball IDT70T659 9S12 CAN 9S12 PDF

    70V7519

    Abstract: IDT70V7519 IDT70V7519S ba6l
    Text: Š HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 256K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 4K x 36 banks – 9 megabits of memory on chip


    Original     		200MHz 166MHz 133MHz) 14Gbps BC-256 70V7519 IDT70V7519 IDT70V7519S ba6l PDF

    A17R-A0R

    Abstract: A17L-A0L 7144
    Text: HIGH-SPEED 1.8V 256/128K x 36 IDT70P3519/99 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V/2.5V/1.8V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location Low Power High-speed data access


    Original     		256/128K IDT70P3519/99 200MHz 166MHz) 14Gbps 200MHz 5T2010 5T9010 A17R-A0R A17L-A0L 7144 PDF

    O23R

    Abstract: o32l 70V3579 A12L A14L IDT70V3579 IDT70V3579S optl p2 3.5mm
    Text: Š HIGH-SPEED 3.3V 32K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE IDT70V3579S Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access


    Original     		IDT70V3579S 133MHz 133MHz O23R o32l 70V3579 A12L A14L IDT70V3579 IDT70V3579S optl p2 3.5mm PDF

    IDT70T3589

    Abstract: IDT70T3599 70T359 70T3589
    Text: HIGH-SPEED 2.5V 256/128/64K x 36 IDT70T3519/99/89S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access


    Original     		256/128/64K IDT70T3519/99/89S 200MHz 166MHz 133MHz) 14Gbps IDT70T3589 IDT70T3599 70T359 70T3589 PDF

    70V659

    Abstract: A12L IDT70V659 IDT70V659S 70V659S15
    Text: PRELIMINARY IDT70V659S HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.


    Original     		IDT70V659S 10/12/15ns 12/15ns IDT70V659 208-ball BF-208) 208-pin DR-208) 256-ball BC-256) 70V659 A12L IDT70V659S 70V659S15 PDF

    IDT70T3509M

    Abstract: 70T3509MS133 A19R BP256
    Text: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns 133MHz (max.)


    Original     		1024K IDT70T3509M 133MHz) 133MHz 133MHz BP-256 BC-256 IDT70T3509M 70T3509MS133 A19R BP256 PDF

    FullFlex36

    Abstract: CYDXXS36V18 400 OHM RESISTOR DQ67
    Text: CYDXXS72V18 CYDXXS36V18 CYDXXS18V18 FullFlex Synchronous SDR Dual Port SRAM FullFlex™ Synchronous SDR Dual Port SRAM Features Functional Description • True dual port memory enables simultaneous access the shared array from each port ■ Synchronous pipelined operation with single data rate SDR


    Original     		CYDXXS72V18 CYDXXS36V18 CYDXXS18V18 18-Mbit, 36-Mbit FullFlex72 72-bit FullFlex36 400 OHM RESISTOR DQ67 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 1024K x 36 IDT70T3509M SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns 133MHz (max.)


    Original     		1024K IDT70T3509M 133MHz) 133MHz 133MHz BP-256 BC-256 PDF

    idt70V659

    Abstract: IDT70V657 IDT70V658 70V659
    Text: HIGH-SPEED 3.3V IDT70V659/58/57S 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.


    Original     		IDT70V659/58/57S 128/64/32K 10/12/15ns 12/15ns IDT70V659/58/57 idt70V659 IDT70V657 IDT70V658 70V659 PDF

    70V7599

    Abstract: IDT70V7599 IDT70V7599S
    Text: Š HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks – 4 megabits of memory on chip


    Original     		200MHz 166MHz 133MHz) 14Gbps out14 BC-256 70V7599 IDT70V7599 IDT70V7599S PDF

    70V3589

    Abstract: A12L A15L IDT70V3589 IDT70V3589S 70v3589s133
    Text: HIGH-SPEED 3.3V 64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V3589S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed clock to data access


    Original     		IDT70V3589S 166MHz 133MHz) 12Gbps 166MHz SMEN-01-05 70V3589 A12L A15L IDT70V3589 IDT70V3589S 70v3589s133 PDF

    A14L

    Abstract: IDT70T3539M A18R 70T3539M
    Text: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)


    Original     		166MHz 133MHz) 12Gbps 166MHz AN-411, A14L IDT70T3539M A18R 70T3539M PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    BFY81

    Abstract: BE2L
    Text: BFY81 SILICON PLANAR NPN DUAL, LOW-NOISE, LOW-CURRENT AMPLIFIER The BFY 81 is a six term inal device containing tw o isolated high-gain silicon planar epitaxial NPN transistors in Jedec T O -7 7 metal case. The good thermal tracking over a wide current and temperature range offers the c irc u it designer matched transistors w ith specified per­


    OCR Scan     		BFY81 BFY81 BE2L PDF

    2n2060

    Abstract: 2n2223 2N2060 MOTOROLA
    Text: MOTOROLA SC X S T RS / R F 15E D | b3b?SS4 0Gflb23fl fl | MAXIMUM RATINGS Sym bol 2N206Q 2N2223.A Collector-Em itter Voltag e V cEO 60 C ollector-E m itter V olta g e V cER 80 C o llector-Base V oltag e VCBO 100 75 80 Vdc Vebo 7.0 5.0 5.0 Vdc Rating Em itter-Base V olta g e


    OCR Scan     		2N206Q 2N2223 2N2480 0Gflb23fl 2N2060 2N2223, 2N2480A 2N2060jA 2N2060 MOTOROLA PDF