DQ67EP
Abstract: INTEL date code
Text: 5 Language: English 6 Compare Now Product Specs Intel Motherboards Intel ® Desktop Boards Intel ® Desktop Boards Executive Series Send Feedback Intel ® Desktop Board DQ67EP Intel ® Desktop Board DQ67EP Add to Compare Compare Now Additional Information
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DQ67EP
LGA1155
DQ67EP
INTEL date code
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DQ67SW
Abstract: BLKDQ67SWB3 STRAW intel amt bios lga1155
Text: 5 Language: English 6 Compare Now Product Specs Intel Motherboards Intel ® Desktop Boards Intel ® Desktop Boards Executive Series Send Feedback Intel ® Desktop Board DQ67SW Intel ® Desktop Board DQ67SW Add to Compare Compare Now Additional Information
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DQ67SW
LGA1155
10ence
DQ67SW
BLKDQ67SWB3
STRAW
intel amt bios
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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Untitled
Abstract: No abstract text available
Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory
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TS16MLE72V6W
TS16MLE72V6W
18pcs
16bits
168-pin
216-word
72-bit
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HYM71V32D755AT4
Abstract: HYM71V32D755AT4-8 HYM71V32D755AT4-P HYM71V32D755AT4-S
Text: 32Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32D755AT4 Series DESCRIPTION The Hynix HYM71V32D755AT4 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 200pin
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32Mx72
PC100
32Mx4
HYM71V32D755AT4
32Mx72bits
32Mx4bits
400mil
54pin
200pin
HYM71V32D755AT4-8
HYM71V32D755AT4-P
HYM71V32D755AT4-S
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MH16S72ABGA-5
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72ABGA-5,-6,-7 1207959552-BIT 166777216 - WORD BY 72-BIT SynchronousDRAM PIN CONFIGURATION ( TOP VIEW ) A DESCRIPTION M 1 The MH16S72ABGA is an 16M word by 72-bit Sy nchronous DRAM module.This consists of f iv e
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MH16S72ABGA-5
1207959552-BIT
72-BIT
MH16S72ABGA
72-bit
MH16S72ABGA-5
133MHz
MH16S72ABGA-6
MH16S72ABGA-7
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256mb ddr333 200 pin
Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
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128Mb:
DDR333
MT46V32M4
MT46V16M8
MT46V8M16
256Mb:
256mb ddr333 200 pin
A11 MARKING CODE
mark DM
8M16
DDR200
DDR266
MT46V16M8
MT46V32M4
MT46V8M16
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CMP12
Abstract: SM5904CF CXD2517
Text: SM5904CF compression and non compression type shock-proof memory controller NIPPON PRECISION CIRCUITS INC. Overview The SM5904CF is a compression and non compression type shock-proof memory controller LSI for compact disc players. The compression level can
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SM5904CF
SM5904CF
16-bit/MSB
NC9926AE
CIRCUITS-35
CMP12
CXD2517
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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Untitled
Abstract: No abstract text available
Text: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability
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STI641004D1-60G
168-PIN
110ns
STI641004D1-60G
42-pin
168pin
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Untitled
Abstract: No abstract text available
Text: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin
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STI7216107D1-60VG
168-PIN
110ns
STI7216107D1-60VG
400-mil
34-pin
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KM44V16100AK
Abstract: TIL 143 KM44V16000AK
Text: KMM372V1600AK/AS KMM372V1680AK/AS DRAM MODULE KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0A is a 16M bit x 72 • Part Identification
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KMM372V1600A
KMM372V1680A
KMM372V1600AK/AS
KMM372V1680AK/AS
16Mx72
16Mx4,
KMM372V160
16Mx4bit
400mil
KM44V16100AK
TIL 143
KM44V16000AK
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HBT 01 - 01G
Abstract: DG20
Text: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]
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MSC23T/PV2720A-XXBS9
152-Word
72-Bit
MSC23T/DV2720A-xxBS9
16-Mb
168-pin
72-bit
HBT 01 - 01G
DG20
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Untitled
Abstract: No abstract text available
Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)
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IBM11M2645H
2Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F
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HYM572A414A
72-bit
HY5117804B
HYM572A414AFG/ATFG/ASLFG/ASLTFG
-0004gOQ
4b750flfl
D005fl51
1EC07-10-JAN96
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Untitled
Abstract: No abstract text available
Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:
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IBM11M32730B
IBM11M32730C
32Mx72
110ns
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Untitled
Abstract: No abstract text available
Text: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)
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IBM11M2730H
2Mx72
110ns
130ns
GGG24flE
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time
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72-Bit
721000GS-60/-70
74ABT244
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Untitled
Abstract: No abstract text available
Text: IBM13Q8734HCA 8M X 72 Registered SDRAM Module Features • 200-P in JE D E C Standard, R egistered 8-B yte Dual In-line M em ory M odule • A utom atic and controlled P recharge C om m ands • Program m able O peration: • 8M x 72 S ynchronous DRAM DIMM
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IBM13Q8734HCA
200-P
IBM13Q8734H
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Untitled
Abstract: No abstract text available
Text: IBM11M4640C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 4Mx64 Fast Page Mode DIMM • Performance: -60 -70 W c RAS Access Time 60ns 70ns fc A C CAS Access Time 20ns 25ns tA A Access Time From Address 35ns
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IBM11M4640C
4Mx64
110ns
130ns
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sm 0038 tsop
Abstract: LV244A CDD assembly smd 3dm
Text: S IE M E N S 8M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module Prelim inary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 2 bank 8 M x 72 organisation
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72-Bit
72V8025GS-50/-60
72V8035GS-50/-60
72V8025/35GS-50/-60
72-ECC
L-DlM-168-18
91x157
sm 0038 tsop
LV244A
CDD assembly
smd 3dm
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J
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MSC23T/P1720C-XXBS18
576-Word
72-Bit
MSC23T/D1720C-xxBS18
168-pin
72-bit
MSC23T1720C-xxBS18
MSC23D1720C-xxBS18
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