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Essentra Components BF-1005 FOOT CYLINDRICAL 1.969" DIA BLK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF-1005	Bulk	216		1	1 $3.93 10 $3.93 100 $2.6024 1000 $2.23035 10000 $2.23035	Buy Now
Mouser Electronics	BF-1005		38			1 $3.68 10 $3.53 100 $3.53 1000 $2.26 10000 $2.26	Buy Now
RS	BF-1005	Bulk	100	15 Weeks	1	1 $3.99 10 $3.99 100 $3.99 1000 $3.99 10000 $3.99	Buy Now
Onlinecomponents.com	BF-1005					1 - 10 $5.65 100 $4.38 1000 $2.17 10000 $1.81	Buy Now
DB Roberts	BF-1005					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BF1005SE6433XT RF MOSFET 5V SOT143
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF1005SE6433XT	Reel			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BF-1005SR-E6327 RF MOSFET 5V SOT143R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF-1005SR-E6327	Reel			15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BF1005E6327HTSA1 RF MOSFET 5V SOT143
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF1005E6327HTSA1	Bulk			2,968	1 - 10 - 100 - 1000 - 10000 $0.1	Buy Now
Infineon Technologies AG BF1005E6327HTSA1 RF MOSFET 5V SOT143
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BF1005E6327HTSA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BF1005E6327HTSA1		468,616		1	1 $0.0972 10 $0.0972 100 $0.0914 1000 $0.0826 10000 $0.0826	Buy Now

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BF1005 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
BF-1005	Essentra Components Catalog	Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.10"CUSH DIA	Original	PDF
BF1005	Infineon Technologies	Single Full Biased; Package: PG-SOT143-4; I_D (max): 25.0 mA; P_tot (max): 200.0 mW; g_fs (typ): 24.0 mS; G_p (typ): 19.0 dB; F (typ): 1.6 dB;	Original	PDF
BF1005	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF1005	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BF1005	Siemens	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)	Original	PDF
BF1005	Temex	Standard coaxial devices 1 to 18 GHz	Original	PDF
BF1005	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF1005	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BF100-50-A-C-0-0625-N-D	GCT Semiconductor	50W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-52-A-C-0-0625-N-D	GCT Semiconductor	52W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-54-A-C-0-0625-N-D	GCT Semiconductor	54W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-56-A-C-0-0625-N-D	GCT Semiconductor	56W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF100-58-A-C-0-0625-N-D	GCT Semiconductor	58W, 2MM PITCH SOCKET, DIL, SMT,	Original	PDF
BF1005E6327	Infineon Technologies	RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143	Original	PDF

BF1005E6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-143	Original	PDF
BF1005R	Infineon Technologies	Single Full Biased; Package: PG-SOT143-4; I_D (max): 25.0 mA; P_tot (max): 200.0 mW; g_fs (typ): 24.0 mS; G_p (typ): 19.0 dB; F (typ): 1.6 dB;	Original	PDF
BF1005R	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF
BF1005R	Infineon Technologies	Dual-MOS FET Monolithic Integrated Circuit	Original	PDF
BF1005S	Infineon Technologies	TRANS MOSFET N-CH 8V 0.025A 4SOT143	Original	PDF
BF1005S	Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF

BF1005 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BF1005SR Abstract: BF1005 BF1005S BF1005SW Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW	PDF
BF1005 Abstract: VPS05178 Text: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178	PDF
BF1005S Abstract: VPS05178 Text: BF1005S Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178	PDF
BF1005SR Abstract: marking NZs Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs	PDF
BF1005SR Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1005 Abstract: BF1005R BF1005W BFP181 BFP181R Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R	PDF
BF1005 Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
Untitled Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. BF1005 BF1005R OT143 OT143R	PDF
sot143 marking code G2 Abstract: G2 MARKING CODE 5 PIN Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S, sot143 marking code G2 G2 MARKING CODE 5 PIN	PDF
BF1005 Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
Untitled Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
BFP181 Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. BF1005S BF1005SR OT143 OT143R BFP181	PDF
Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005S. BF1005S OT143 BF1005SR OT143R	PDF

Untitled Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005W* OT343	PDF
BF1005 Abstract: No abstract text available Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005	PDF
BF1005 Abstract: BF1005R BF1005W Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 OT143 BF1005R OT143R BF1005W* OT343 Feb-18-2004 BF1005 BF1005R BF1005W	PDF
Untitled Abstract: No abstract text available Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,	PDF
BF1005R Abstract: No abstract text available Text: BF1005R Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005R EHA07215 OT143R Nov-07-2001 200MHz BF1005R	PDF
MRF581 Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92 Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk Roelofsǈޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ	Original		PDF
Motorola transistor smd marking codes Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56 Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.	Original		PDF
smd diode B3 Abstract: b3 smd diode b3 smd transistor SMD transistor b3 BF1005 Text: ASB0130 SMD Schottky Barrier Diode Preliminary Features General Description IO = 100mA VR = 30V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low drop-down voltage. 0.033(0.85)	Original	ASB0130 100mA MIL-STD-750, 30mperature 100mADC smd diode B3 b3 smd diode b3 smd transistor SMD transistor b3 BF1005	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
uaf4000 Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャーはじめに	Original	20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR	PDF

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BF1005 Price and Stock

Essentra Components BF-1005

Infineon Technologies AG BF1005SE6433XT

Infineon Technologies AG BF-1005SR-E6327

Rochester Electronics LLC BF1005E6327HTSA1

Infineon Technologies AG BF1005E6327HTSA1

BF1005 Datasheets (38)

BF1005 Datasheets Context Search

BF1005SR

BF1005

BF1005S

BF1005SR

BF1005SR

BF1005

BF1005

Untitled

Untitled

sot143 marking code G2

BF1005

Untitled

BFP181

Untitled

Untitled

BF1005

BF1005

Untitled

BF1005R

MRF581

Motorola transistor smd marking codes

smd diode B3

BC548 TRANSISTOR REPLACEMENT

uaf4000