Untitled
Abstract: No abstract text available
Text: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power
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BLW29
BFQ42
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BDS61A
Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Text: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a
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BDS61
OT223)
BDS60/60A/60B/60C.
OT223
BDS61A
BDS61B
BDS61C
smd npn darlington
Darlington NPN Silicon Diode
smd diode LC 61
SMD 547 DIODE
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optocoupler 4N25 VDE
Abstract: a4n25 4N25 A4N25A 4N25A 4N26 4N27 4N28 sot90b optocoupler 4n25
Text: 4N25 4N25A 4N26 4N27 4N28 TO Æ J OPTOCOUPLERS V- T h is p ro d u c t range is o n e o f th e indu strial standards ap plied in th e m arket. T he current transfer ratio, iso la tio n voltage and lo w saturation voltage c o m p ly w ith th e sp e cifica tio n s o f th e m ain part o f the
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4N25A
E90700
0110b
7Z91427
D035b23
optocoupler 4N25 VDE
a4n25
4N25
A4N25A
4N25A
4N26
4N27
4N28
sot90b
optocoupler 4n25
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE DbE D PowerMOS transistor • bLSaiBl QQ14fl01 5 ■ BUZ307 t -s t -u May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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QQ14fl01
BUZ307
T0218AA;
T-39-11
0014fl0b
bfciS3T31
BU2307
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