711Gfl2b
Abstract: IEC134 BFQ295 BFQ296
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor philips BFQ296 ShE T> international FEATURES 711Gfl2b 0G4Sb7fl D7T « P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
711Gfl2b
BFQ295.
BFQ296
OT128B
OT128B.
IEC134
BFQ295
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BFQ291
Abstract: BFQ290
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product
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33-oS
BFQ291
BFQ290.
BFQ291
OT172A1
00M5b74
MBC869
OT172A1.
BFQ290
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BFQ290
Abstract: BFQ291
Text: Philips Semiconductors • bbSBTBl DD317Ô4 T T 1 ■ ! A P X ^ l^ 2!Ì2ÌÌ22il2E 2£ÌÌÌ£2ÌÌ^ PNP HDTV video transistor BFQ290 N AnER PHILIPS/DISCRETE b^E D PINNING FEATURES 4 DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1
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DD317Ã
BFQ290
BFQ291.
BFQ290
OT172A1
M8C369
OT172A1.
BFQ291
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sot-23 MARKING CODE ZA
Abstract: BFQ29P
Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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BFQ29P
62702-F
sot-23 MARKING CODE ZA
BFQ29P
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BFQ290
Abstract: BFQ291
Text: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector
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-33-s
BFQ290
711Dfl2h
0045b73
BFQ291.
BFQ290
OT172A1
MBC869
OT172A1.
BFQ291
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BFQ295
Abstract: BFQ296 sot128b
Text: Preliminary specification Philips Semiconductors PNP HDTV video transistor '7 ^ 3 3 5bE T> PH IL IP S I N T E R N A T I O N A L FEATURES • BFQ295 7110fl2b DD M5 b ? 7 132 ■ P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance
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BFQ295
711002b
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
sot128b
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 DD317flb flbM W A P X Preliminary specification PNP HDTV video transistor BFQ292 — N AMER PHILIPS/DISCRETE b'lE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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bb53T31
DD317flb
BFQ292
BFQ293.
BFQ292
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100-C
Abstract: BFQ290 BFQ291
Text: PMlips_Semiconductors jB t a b S B 'I B l 0 0 3 1 7 fl5 T2fl IHAPX Pre,iminary specification NPN HDTV video transistor — — BFQ291 — N AMER PHILIPS/DISCRETE FEATURES t.'JE » PINNING • High breakdown voltages • Low output capacitance PIN 1 DESCRIPTION
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tab53131
BFQ291
BFQ290.
BFQ291
OT172A1
100-C.
100ii
OT172A1.
100-C
BFQ290
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BFQ292
Abstract: BFQ293
Text: Philips Semiconductors M b hi 5 3 ^ 31 0031767 NPN HDTV video transistor FEATURES 7 T 0 •■ A P X ^^^relirninar^specification BFQ293 N AMER PHILIPS/DISCRETE b^E J> PINNING High breakdown voltages Low output capacitance High gain bandwidth product Good thermal stability
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BFQ293
BFQ292.
BFQ293
BFQ292
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transistor 1002
Abstract: transistor 835 BFQ295 BFQ296
Text: b b 5 3 T 31 D0317fl^ 573 • APX Preliminary specification Philips Semiconductors NPN HDTV video transistor —^ BFQ296 N FEATURES AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
transistor 1002
transistor 835
BFQ295
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b5 3 T 31 D0317fl^ 573 | • APX Preliminary specification NPN HDTV video transistor ^ BFQ296 N FE A T U R E S AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages • Low output capacitance PIN 1 emitter • High gain bandwidth product
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D0317fl^
BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
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transistor 3bt
Abstract: 3bt pnp BFQ292 BFQ293
Text: Prelim inary specification Philips Sem iconductors BFQ292 PNP HDTV video transistor PH IL IP S INTERNATIONAL 711GflEb □□45L.7S 3t.T PINNING FEATURES • SbE D DESCRIPTION PIN High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ292
BFQ293.
BFQ292
711GflEb
45ti7S
transistor 3bt
3bt pnp
BFQ293
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Untitled
Abstract: No abstract text available
Text: Ph|JjP^ j2jconductors^^B^ ^^53*131 D0317S7 7T0 • AP X ^^^^relimina^^specification NPN HDTV video transistor BFQ293 N AMER P H I L I P S / D I S C R E T E FEATURES b^E J> PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter
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D0317S7
BFQ293
BFQ292.
BFQ293
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BFQ295
Abstract: BFQ296
Text: Philip^emiçonductore ^ b b 5 3 T 31 Q0317flfl b 37 W A P X Prelim inary specification PNP HDTV video transistor BFQ295 N AUER FEA TU R ES PHILIPS/DISCRETE b^E PINNING PIN • High breakdown voltages • Low output capacitance 1 emitter DESCRIPTION • High gain bandwidth product
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bb53T31
BFQ295
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
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transistor 3305
Abstract: BFQ292 BFQ293
Text: Philips Sem iconductors Prelim inary specification 0 *5 NPN HDTV video transistor PHIl IPS INTERNATIONAL FEATURES 5bE D • BFQ293 711Da2b □ □ 4 Sb?b 2 Tb ■ P H I N PINNING PIN • High breakdown voltages • Low output capacitance 1 emitter DESCRIPTION
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BFQ292.
BFQ293
BFQ293
transistor 3305
BFQ292
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TRANSISTOR BIZ
Abstract: BFQ292 BFQ293
Text: Philips Semiconductors 1^53^31 DG317flb flfciM W APX Preliminary specification BFQ292 PNP HDTV video transistor bTE D PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product 2 collector
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00317flb
BFQ292
BFQ293.
BFQ292
TRANSISTOR BIZ
BFQ293
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BFQ290
Abstract: BFQ291
Text: Philips Semiconductors Preliminary specification NPN HDTV video transistor BFQ291 PH IL IP S I N T E R N A T I O N A L FEATURES 5 bE » 7 1 1 0 0 2 b 0 0 4 5 b? 4 423 • PHIN PINNING • High breakdown voltages • Low output capacitance 1 collector • High gain bandwidth product
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BFQ291
BFQ290.
BFQ291
OT172A1
711002b
D045b7
M9C869
OT172A1.
BFQ290
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BFQ295
Abstract: BFQ296
Text: Philips Semiconductors 7 ^3 3 NPN HDTV video transistor philips ShE J> international FEATURES Preliminary specification BFQ296 7110û2b GD45fc>7ß 07T • PHIN PINNING • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ296
BFQ295.
BFQ296
OT128B
OT128B.
BFQ295
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ bbSB^Bl 0 Q3 1 7 flfl b37 M APX Preliminary specification PNP HDTV video transistor BFQ295 — FEATURES N AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ295
BFQ296.
BFQ295
OT128B
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Untitled
Abstract: No abstract text available
Text: PhilipsSemloonductore • bb53T31 0031764 TT1 ■ A P X ^ ^ P re lim in a r^ p e c i^ PNP HDTV video transistor BFQ290 « FEATURES N AriER PHILIPS/DISCRETE b^E D PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance 1 • High gain bandwidth product
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bb53T31
BFQ290
BFQ291.
BFQ290
OT172A1
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 0031765 TS6 • ^PX NPN HDTV video transistor BFQ291 - N AMER PHILIPS/DISCRETE FEATURES fc.'JE D PINNING • High breakdown voltages • Low output capacitance PIN DESCRIPTION 1 collector • High gain bandwidth product 2 base
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bb53T31
BFQ291
BFQ290.
BFQ291
OT172A1
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Untitled
Abstract: No abstract text available
Text: Preliminary specification Philips Semiconductors BFQ292 PNP HDTV video transistor PHILIPS INTERNATIONAL FEATURES SbE D VllGflEh D04SL.7S 3fc.T PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product
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BFQ292
D04SL
BFQ293.
BFQ292
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs P re lim in a ry s p e c ific a tio n 0 ^5 NPN HDTV video transistor PHIt IPS INTERNATIONAL FEA TU R ES 5b E D • BFQ293 TllDfiEb DDHSfc.7b 2 T b ■ P H I N P IN N IN G • High breakdow n voltages • Low output capacitance
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BFQ293
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BFT97
Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages
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BF199
BF240
BF241
BF254
BF255
BF414
BF420
BF420L
BF421
BF421L
BFT97
Siemens 1985
BFT65
bfr91a siemens
BFQ64P
BFT98T
BFS55A
BFR96S
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