BFR96 LOW POWER TRANSISTOR Search Results

BFR96 LOW POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR3DF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV)

BFR96 LOW POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bfr96 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 bfr96	PDF
Untitled Abstract: No abstract text available Text: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •	Original	BFR96 10Vdc,	PDF
BFR96 Abstract: No abstract text available Text: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T	Original	BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96	PDF
BFR96 Abstract: MSC1309 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, MSC1309 BFR96 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607	PDF
BFR96 Abstract: s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA	Original	BFR96 BFR96G BFR96 s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA	Original	BFR96 BFR96G	PDF
BFR96 Abstract: MRF586 bfr96 equivalent Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, BFR96 MRF586 bfr96 equivalent	PDF
transistor bfr96 Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold	Original	BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola	PDF
Untitled Abstract: No abstract text available Text: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF555 MRF545 MRF544	PDF
2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607 Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607	PDF
Untitled Abstract: No abstract text available Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF545 MRF544	PDF
BFR96 Abstract: BFR96 TRANSISTOR transistor bfr96 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	BFR96 BFR96 D10b3 BFR96 TRANSISTOR transistor bfr96	PDF
BFR96 Abstract: No abstract text available Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers	OCR Scan	BFR96 BFR96	PDF
Transistor C G 774 6-1 Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers	OCR Scan	BFR96 Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1	PDF

BFR96 Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96 Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	ON4487) BFQ32. BFR96 711DflSb r-31-23 711Dfl2b BFR96 BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96	PDF
BFR96 Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	BFR96 DD4S77b ON4487) BFQ32. coll801 711082b BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor	PDF
transistor bfr96 Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933 Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	bbS3131 BFR96 ON4487) BFQ32. transistor bfr96 BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933	PDF
BFR96 philips Abstract: No abstract text available Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as	OCR Scan	BFR96 BFR96/02 ON4487) hbS3T31 BFR96 philips	PDF
SL2128 Abstract: MRF965 MRF961 BFRC96 case 317-01 Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro	OCR Scan	BFR96 BFRC96 MRF961 MRF962 MRF965 BFR96, BFRC96, MRF961, SL2128 MRF965 case 317-01	PDF
2N5109 motorola Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro	OCR Scan	17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943	PDF
uhf amplifier design BFR90 Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91 Text: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01	OCR Scan	2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91	PDF
900 mhz oscillator using bfr91 transistor Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro	OCR Scan	17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237	PDF
BFT92A Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92 Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E	OCR Scan	BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92	PDF
mrf502 gold transistor Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro	OCR Scan	17A-01 05A-01 MRF525* 2N4428 O-205AD 2N5160f 2N3866 MRF313 mrf502 gold transistor Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911	PDF

BFR96 LOW POWER TRANSISTOR Search Results

BFR96 LOW POWER TRANSISTOR Result Highlights (5)

BFR96 LOW POWER TRANSISTOR Datasheets Context Search

bfr96

Untitled

BFR96

BFR96

BFR96

Untitled

BFR96

transistor bfr96

Untitled

2N4427

Untitled

BFR96

BFR96

Transistor C G 774 6-1

BFR96

BFR96

transistor bfr96

BFR96 philips

SL2128

2N5109 motorola

uhf amplifier design BFR90

900 mhz oscillator using bfr91 transistor

BFT92A

mrf502 gold transistor