FZ1200R33KF2C
Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany
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D-59581
D-85579
06K/kW
FZ1500R33HE3
FZ1500R33HL3
FZ1200R33KF2C
FZ1500R33HE3
FZ1200R33KF2C
igbt 3.3kv
planar busbar design
HIGH VOLTAGE DIODE 3.3kv
FZ1500R33HL3
the calculation of the power dissipation for the IGBT
i300a
IGBT FZ1200
BUSBAR calculation
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HP STEP RECOVERY DIODES
Abstract: cibh-diode fz1500r33he3 A-9500 igbt module 1500A A9500 IGBT3 infineon HIGH VOLTAGE DIODE 3.3kv 3.3kv diode Biermann
Text: CIBH Diode with Superior Soft Switching Behavior in 3.3kV Modules for Fast Switching Applications Jürgen Biermann, Infineon Technologies AG, Max-Planck-Strasse 5, D-59581 Warstein, Germany Manfred Pfaffenlehner, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany
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D-59581
D-85579
HP STEP RECOVERY DIODES
cibh-diode
fz1500r33he3
A-9500
igbt module 1500A
A9500
IGBT3 infineon
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
Biermann
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HIGH VOLTAGE DIODE 3.3kv
Abstract: 3.3kv diode FZ1200R33KF2C EUPEC T 503 junction termination extension igbt 3 KA 3.3kv emcon diode diode current 1200A FZ1200r igbt 3.3kv
Text: New 3300V High Power Emcon-HDR Diode with High Dynamic Robustness J. Biermann1 , K.-H. Hoppe1), O. Schilling1), J.G. Bauer2), A. Mauder2), E. Falck2), H.-J. Schulze2), H. Rüthing2), G. Achatz3) 1 2 eupec GmbH, Max-Planck-Straße, D-59581 Warstein, Germany
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D-59581
D-81541
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
FZ1200R33KF2C
EUPEC T 503
junction termination extension
igbt 3 KA 3.3kv
emcon diode
diode current 1200A
FZ1200r
igbt 3.3kv
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG Rosenberger RIGHT ANGLE PLUG FOR PCB HSD D4S20Y-400A5-Y All dimensions are in mm; tolerances according to ISO 2768 m-H
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D4S20Y-400A5-Y
D-84526
400A5-Z
13-s301
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6.5kV IGBT
Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany
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D-59581
D-85579
6.5kV IGBT
6.5kV IGBT loss
igbt 6.5kv
igbt3 igbt2 infineon
L280N
A-9500
igbt2 infineon
infineon igbt3 ohm
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
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59S10K-40MT5
Abstract: 59S10K-40MT5-Y 59S10K-40MT5-A 59S10k-40 MB286 VG129 rosenberger FAKRA
Text: Technical Data Sheet RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG FAKRA HF 59S10K-40MT5-Y STRAIGHT PLUG PCB All dimensions are in mm; tolerances according to ISO 2768 m-H
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59S10K-40MT5-Y
VG129
6T/66
D-84526
r-40MT5
59S10K-40MT5
12-s384
59S10K-40MT5-Y
59S10K-40MT5-A
59S10k-40
MB286
rosenberger
FAKRA
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aic2300
Abstract: kl2 diode FZ 44 NS 330nF FZ1200R33KL2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KL2 vorläufiges Datenblatt preliminary datasheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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240tt
FZ1200R33KL2
aic2300
kl2 diode
FZ 44 NS
330nF
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET HSD RIGHT ANGLE PLUG FOR PCB D4S20Y-40MA5-Y All dimensions are in mm; tolerances according to ISO 2768 m-H EMC-screening must be assured by chassis compartment. Control box manufacturer is responsible for EMCscreening. Interface According to
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D4S20Y-40MA5-Y
D4V019
D-84526
D4S20Y-40MA5-Y
11-s505
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FX2N-128MR
Abstract: FX2N-48MT Mitsubishi MELSEC FX2N-80MR FX2N 64mr manual FX2N-64MT Mitsubishi MELSEC FX2N-80MR-DS beijer make sc09 programming cable Melsec mitsubishi rs232 sc09 programming cable FX2N-16MR
Text: MITSUBISHI ELECTRIC Programmable Logic Controllers 40 90 X IN 0 1 2 3 4 5 6 7 L COM X0 X2 X4 X6 X10 X12 X14 X16 24+ X1 X3 X5 X7 X11 X13 X15 X17 N POWER 0 1 2 3 4 5 6 7 IN 10 11 12 13 14 15 16 17 MELSEC FX0S, FX0N, FX2N POWER RUN BATT.V FX 2N-16EX OUT FX 2N-32MR
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2N-16EX
2N-32MR
E-08014
D-40880
S-20123
H-1124
CH-8309
FX2N-128MR
FX2N-48MT
Mitsubishi MELSEC FX2N-80MR
FX2N 64mr manual
FX2N-64MT
Mitsubishi MELSEC FX2N-80MR-DS
beijer make sc09 programming cable
Melsec
mitsubishi rs232 sc09 programming cable
FX2N-16MR
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LG color tv Circuit Diagram schematics
Abstract: hp laptop MOTHERBOARD pcb CIRCUIT diagram la 4440 amplifier circuit diagram 300 watt hp laptop ac adapter schematics diagram schematic led screen billboard METAL DETECTOR PROGRAM PIC16F84 megamax-4g pic 220v light dimmer hydraulic lift project microcontroller based billboard display system
Text: Section 1: Introduction Introduction . 1-1 Third Party Support by Product . 1-3 Emulators . 1-3
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DS00104D-page
DS00104D
LG color tv Circuit Diagram schematics
hp laptop MOTHERBOARD pcb CIRCUIT diagram
la 4440 amplifier circuit diagram 300 watt
hp laptop ac adapter schematics diagram
schematic led screen billboard
METAL DETECTOR PROGRAM PIC16F84
megamax-4g
pic 220v light dimmer
hydraulic lift project
microcontroller based billboard display system
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet RF_35/05.10/6.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG FAKRA HF RIGHT ANGLE PLUG 59S22B-40MT5-Y FOR PCB c All dimensions are in mm; tolerances according to ISO 2768 m-H
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59S22B-40MT5-Y
59S22B-40MT5
VG179
400pcs
D-84526
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VFD DRIVER TRANSFORMER
Abstract: 16 Digit 5x7 Segment VFD TA 8639 P M66004SP mitsubishi mds register electronica VFD availability DIG13 m6604 E7IE
Text: 1931 & & A MITSUBISHI DIGITAL ASSP M66004SP/FP 16 Digit 5x7 Segment VFD Controller/Driver DESCRIPTION PIN CONFIGURATION TOP VIEW The M66004SP/FP is a controller/driver for 16 digit, 5x7 segment vacuum fluorescent displays (VFD). The M66004SP/FP is made using
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M66004SP/FP
M66004SP/FP
MDS-ASSP-02-06-91-
VFD DRIVER TRANSFORMER
16 Digit 5x7 Segment VFD
TA 8639 P
M66004SP
mitsubishi mds
register electronica
VFD availability
DIG13
m6604
E7IE
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PP5V
Abstract: M5M28F101AFP 708-8034
Text: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro
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1048576-BIT
131072-WQRD
M5M28F101A
1048576-bit
32pin
--A14
MD5-MEM-05-6/95-500
PP5V
M5M28F101AFP
708-8034
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Untitled
Abstract: No abstract text available
Text: JAt. ’ o « * ’ ^ A DIGITAL ASSP MITSUBISHI M66004SP/FP 16 Digit 5x7 Segment VFD Controller/Driver DESCRIPTION PIN CONFIGURATION TOP VIEW The M66004SP/FP is a controller/driver for 16 digit, 5x7 segment vacuum fluorescent displays (VFD). The M66004SP/FP is made using
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M66004SP/FP
M66004SP/FP
DIG11-
-DIG13
J-MDIG15
DIG06-Â
MDS-ASSP-02-06-91-
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Untitled
Abstract: No abstract text available
Text: 12 1992 MITSUBISHI LSIs M5M44409TP-10,-12,-15,-20 Apr 15,1992 4M Cache DRAM : 4194304-BIT io 48S76- w o r d b y 4-bit DRAM Array with 16384-BIT (4096- w o r d b y 4-btt) SRAM Cache Preliminary This document is a Preliminary Spec, and some of the contents are subject to change without notice.
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M5M44409TP-10
4194304-BIT
48S76-
16384-BIT
44409TP
1048576-word
4096-word
MDS-CDFW-2-04-92-1K
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m5M28F102
Abstract: COMMAND40 UNICOM Electric 28F102P
Text: MITSUBISHI LSIs M5#tô8F102P,FP,J,VP,RV- 10,- 12,- 15 V*vi 048576- BIT 65536- WORD BY 16-BIT CM0S FLASH MEMORY -DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F102P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable for
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8F102P
16-BIT
28F102P,
40pin
44pin
m5M28F102
COMMAND40
UNICOM Electric
28F102P
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as011
Abstract: AD411 wt246
Text: I T S lF t g ìQ ÌÌ ^ @ a { [R Ì® W a H Æ J MITSUBISHI LSIs M5M4V16409ATP-8r 10,-12,-15 Oct 26,1992 16MCDRAM:16M (4194304 - WORD BY 4 - BIT) Cache DRAM with 16k (4096-WORD BY4 -BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.
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M5M4V16409ATP-8r
16MCDRAM
4096-WORD
MDS-CDRAM-07-12/92/-IK
as011
AD411
wt246
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Untitled
Abstract: No abstract text available
Text: »o ^T S ìT ^Ì@ ìì ;f¿A? q'iÜ¡ MITSUBISHI LSIs M5M4V4169TP-15,-20 Oct 26,1992 4MCDRAM:4M 262144 - WORD BY 16 - BIT) Cache DRAM with 16k (1D24-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.
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M5M4V4169TP-15
1D24-WORD
16-BIT)
M5M4V4169TP
144-word
16-bit
MDS-CDRAM-06-12/92-1K
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Untitled
Abstract: No abstract text available
Text: |£|< 3-0 '39? U MITSUBISHI LSIs M5M4V16409ATP-8,-10,-12,-15 Oct 26,1992 16MCDRAM-.16M 4194304 - WORD BY 4 - BIT Cache DRAM with 16k (4Q96-WORD BY4 -BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.
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M5M4V16409ATP-8
16MCDRAM-
4Q96-WORD
MDS-CDRAM-07-12/92/-IK
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i/4Kx4 SRAM
Abstract: No abstract text available
Text: * í . y A \ß ü u ü .e d l 0 MITSUBISHI ELECTRONIC DEVICE GROUP ^ a .o u 2ju ù T A n a e r a p c o . n c w -fro f- M5M44409TP-10,-15,-20 Cached DRAM Cached DRAM with 50 to 100 MHz Performance at 4Mb Density M5M44409TP-10, -15, -20 Cached DRAM DESCRIPTION
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M5M44409TP-10
M5M44409TP-10,
M5M44409TP
1048576-word
4096-word
61850idan
i/4Kx4 SRAM
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z63n
Abstract: t28000 z65n 07in M6008 mitsubishi lable fr1s MITSUBISHI GATE ARRAY z66n R12W
Text: A m itsu b ish i ELECTRO N IC DEVICE GROUP P R E LIM IN A R Y M6008X 0.8 Jim CMOS GATE ARRAYS Mitsubishi M6008X Series 0.8 Jim CMOS Gate Arrays INTRODUCTION Mitsubishi offers sub-m icron CMOS Gate Arrays us ing a 0.8 micron drawn twin well silicon gate process
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M6008X
MDS-GA-02-03-91
z63n
t28000
z65n
07in
M6008
mitsubishi lable
fr1s
MITSUBISHI GATE ARRAY
z66n
R12W
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m60013
Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are
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MDS-GA-11-90-RK
m60013
M60016
m60011
M60014
z46n
M60030
M60024
Z24N
M60012
m60043
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Untitled
Abstract: No abstract text available
Text: APR MITSUBISHI LS Is « 199! C< M5M52B88J-8,-10,-12,-15 262144-BIT 32768-WORD BY 8-BIT BiCMOS STATIC RAM ><* • ""V "6 DESCRIPTION 6° TheM5M52B88 is a family of 32768-word by 8-bit Static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performanceBiCMOS process
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262144-BIT
32768-WORD
TheM5M52B88
32768-word
52B88J-10.
52888J-12.
M5M52B88J-15
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