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    BIFET AMPLIFIER DISCRETE SCHEMATIC Search Results

    BIFET AMPLIFIER DISCRETE SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    BIFET AMPLIFIER DISCRETE SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    amelco

    Abstract: No abstract text available
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100G HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C


    Original     		LS320 200mW 25-year-old, amelco PDF

    amelco

    Abstract: No abstract text available
    Text: LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER FEATURES rGs = 100GΩ HIGH INPUT IMPEDANCE HIGH TRANSCONDUCTANCE ABSOLUTE MAXIMUM RATINGS YFS = 30,000µS TOP VIEW TO-72 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature -55 to +150 °C


    Original     		LS320 200mW 25-year-old, amelco PDF

    Accelerometers

    Abstract: TLV24xx TLE2161 TLV2772 ne55x TLE2082 "operational amplifier selection guide" TLE2227 Texas Instruments CMOS TLE2682
    Text:                        Amplifiers 1-1                         Signal Conditioning – Amplifiers 1-1 Operational Amplifier                        1-2 Signal Conditioning - Amplifiers


    Original     		PDF

    35F0121-1SR-10

    Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology   


    Original     		RF3928280W RF3928 RF3928 DS110221 35F0121-1SR-10 ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR PDF

    thermocouple gaas

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN


    Original     		RF3928280W RF3928 RF3928 DS110317 thermocouple gaas PDF

    Untitled

    Abstract: No abstract text available
    Text: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V


    Original     		RF7411 10-Pin, 28dBm 203mm 330mm 025mm DS111206 PDF

    GaN hemt

    Abstract: power transistor gan s-band air surveillance system diagram using radar
    Text: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928280 RF3928 RF3928 DS110720 GaN hemt power transistor gan s-band air surveillance system diagram using radar PDF

    ATC100B620

    Abstract: L22 amplifier Gan hemt transistor RFMD
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928280W RF3928 RF3928 DS120119 ATC100B620 L22 amplifier Gan hemt transistor RFMD PDF

    bifet amplifier discrete schematic

    Abstract: ERJ8GEYJ100V thermocouple gaas
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


    Original     		RF3934 RF3934 DS120202 bifet amplifier discrete schematic ERJ8GEYJ100V thermocouple gaas PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original     		RF3934 DS120306 PDF

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928 RF3928280W DS120508 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original     		RF3934 RF3934 DS120306 PDF

    RFMD PA LTE

    Abstract: RF7413 RF-741
    Text: RF7413 3V WCDMA BAND 3 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm CONFIDENTIAL: NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/LTE High Efficiency WCDMA Operation: 41% at POUT=+28dBm RF IN Low Voltage Positive Bias


    Original     		RF7413 10-Pin, 28dBm RF7413 203mm 330mm 025mm DS111206 RFMD PA LTE RF-741 PDF

    GaN ADS

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features „ „ „ „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


    Original     		RF3934 RF3934 DS111121 GaN ADS PDF

    ATC800B5R6

    Abstract: ATC800B6R8 ATC800B120
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120 PDF

    RF3928B

    Abstract: power transistor gan s-band RF392
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928B RF3928B DS111208 power transistor gan s-band RF392 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RFHA1025 RFHA1025 96GHz 215GHz DS120928 PDF

    simple power supply schematic diagram

    Abstract: RF3931S2 ATC800A3R3BT
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT PDF

    atc100a150

    Abstract: power transistor gan s-band
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928B RF3928B DS120503 atc100a150 power transistor gan s-band PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		RF3931 900MHz DS120406 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		RF3931 900MHz RF3931 DS120202 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RFHA1025 96GHz 215GHz DS120613 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		RF3928B DS120503 PDF