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    BL C1000 Search Results

    BL C1000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FLAC1000 Amphenol Communications Solutions FLA Shorting Cap NEMA ANSI C136.41, Shorting Contacts Visit Amphenol Communications Solutions
    NTHBR11C1000SR Amphenol Communications Solutions NETbridge+ 1x1 Right Angle Seal C code ,100MΩ resistance insulation,3A,Surface Mount termination. Visit Amphenol Communications Solutions
    NTHBR22C1000SR Amphenol Communications Solutions NETbridge+ 2x2 Right Angle Seal C code ,100MΩ resistance insulation,3A,Surface Mount termination. Visit Amphenol Communications Solutions
    NTHBR23C1000SR Amphenol Communications Solutions NETbridge+ 2x3 Right Angle Seal C code ,100MΩ resistance insulation,3A,Surface Mount termination. Visit Amphenol Communications Solutions
    CC1000PW Texas Instruments Single Chip Ultra Low Power RF Transceiver for 315/433/868/915 MHz SRD Band 28-TSSOP -40 to 85 Visit Texas Instruments Buy
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    BL C1000 Price and Stock

    TE Connectivity AST4700C00035BLC1000

    AST4700C00035BLC1000:CTO-1300000
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    DigiKey AST4700C00035BLC1000 Bulk 5
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    Master Electronics AST4700C00035BLC1000
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    TE Connectivity AST4700C00100BLC1000

    AST4700C00100BLC1000:CTO-1300000
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    DigiKey AST4700C00100BLC1000 Bulk 5
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    Master Electronics AST4700C00100BLC1000
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    Caplugs VC-1000-8 BLK

    Conduit Fittings & Accessories ROUND VINYL CAP 1.00X1.14X.50 BLK
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    Mouser Electronics VC-1000-8 BLK 1,907
    • 1 $0.34
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    Rego Electronics Inc CBLD-SL8S8R-PC-1000

    Computer Cables SilmSAS cable assembly (PCIe4.0) L=1000mm
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    Mouser Electronics CBLD-SL8S8R-PC-1000 10
    • 1 $128.75
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    • 100 $109.82
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    Alpha Wire 5122C BL001

    Multi-Conductor Cables 22 AWG 2 Conductor 300V SupraShield SR PVC PVC, 1000 ft Spool - Blue
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    Mouser Electronics 5122C BL001
    • 1 $3292.23
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    Find more BL C1000 price and stock on Findchips.com

    BL C1000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    25t65

    Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
    Text: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221


    Original     		100/300/W 100/300W 1000PAR64Q/MFL 1000PAR64Q/NSP 1000PAR64Q/WFL 1000T3 1000T3Q/P/CL 00-90A/99EW 25t65 tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830 PDF

    tl741

    Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
    Text: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic


    Original     		10S11N 10S11N/F 15CAC/F-CD/2-12 --15S14/GR/CL 15T10 20T61/2DC/F 20T61/2/F 25CAC --25CAC-CD/2-120 25G181/2/W tl741 VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST PDF

    C1000B

    Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power


    Original     		KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 16Bit 1Mx16 C1000B KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B PDF

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N PDF

    MO-224

    Abstract: No abstract text available
    Text: HYS64T32000GDL HYS64T64020GDL Preliminary Datasheet Rev. 0.8 07.03 1.8 V 200-pin Small Outline DDR2 SDRAM Modules (SO-DIMMs) 256 MByte & 512 MByte Modules PC2-3200S /-4300S /-5300S • 200-pin Non-ECC Unbuffered 8-Byte Dual-InLine DDR2 SDRAM Module for PC,


    Original     		HYS64T32000GDL HYS64T64020GDL 200-pin PC2-3200S /-4300S /-5300S 512Mb 84-ball DDR2-400 MO-224 PDF

    Untitled

    Abstract: No abstract text available
    Text: D a ta S h e e t , V0 . 8 , A u g . 2 0 0 3 HY S6 4T320 00GDL 2 56 M B y t e HY S6 4T640 20GDL ( 5 12 M B y t e) D DR 2 S m a l l O ut li ne D I M M M o du le s Mem ory P ro duc ts N e v e r s t o p t h i n k i n g . HYS64T32000GDL HYS64T64020GDL Preliminary Datasheet Rev. 0.8 (08.03)


    Original     		4T320 00GDL 4T640 20GDL HYS64T32000GDL HYS64T64020GDL 200-pin PC2-3200S /-4300S /-5300S PDF

    CBR-12

    Abstract: No abstract text available
    Text: bl CENTRAL SE MICONDU CTOR 40<80 Amperes ^RRM <volts> DOGOlSfl a r T -Ô /-Ô I General Purpose Silicon Power Rectifier deI ^^ £ * "5 4 D I ooooisa 2 | CR40- CR40- CR40- CR40- CR40- CR40- CR40- CR40- 005 0 10 020 040 0 60 08 0 100 120 CR60- CR60- CR60-


    OCR Scan     		CR40005 CR400 CR60010 CR800 CR40020 CR60020 CR40040 CR600 CBR-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333 PDF

    C-1000B

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 C-1000B PDF

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAI S E M I C O N D UCTOR . ~T ï 61C 0 0 1 9 6 r T - 3 3 - 2 9 o o o o n t, o f ' ~ t ^ 3 & ' 37— POWER DARLINGTON TRANSISTORS EPOXY " IC = 10 A ^ O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E -6 5 °to + 1 5 0 ° C TYPE


    OCR Scan     		2N6387 2N6667 2N6388 2N6668 D44E1 D45E1 D44E2 D45E2 To-126 C1000SE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416V1200BJ 1Mx16 416V1200BJ) 003072D 3D721 PDF

    C1000B

    Abstract: KM416CI200BJ
    Text: KM416C1200BJ CMOS DRAM ELECTRONICS 1M x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1200BJ 1Mx16 40SOJ C1000B KM416CI200BJ PDF

    BUW67

    Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
    Text: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10


    OCR Scan     		T-33-29 TEMPERATURE-55Â 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BDX85 BDX86 BUW67 BDX85C bdx86c PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416V1000BT 1Mx16 1000BT) 7Tb4142 GG30b2b PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416V1000BJ 1Mx16 40SOJ PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BT C MOS DR A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000BT 1Mx16 000BT GD3D53b PDF

    C1000B

    Abstract: I22S stt 300
    Text: K M 4 1 6 V l O O O BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM OS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416V 16Bit 1Mx16 HMH01EJHBSH0IHBII KM416V1000BT) C1000B I22S stt 300 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1200BJ C M O S DRAM ELECTRO NICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1200BJ 1Mx16 7Tb414E GD3D331 PDF

    C1000B

    Abstract: C-1000B
    Text: KM416C1200BT ELECTRONICS C MO S D R A M 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1200BT 16Bit 1Mx16 KM416C1200BT) 7Tb414E C1000B C-1000B PDF

    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C PDF

    L0630

    Abstract: TC9800 L0405 L1215 L0226 L0640 L1692 P 9806 AD TC9806 L0090
    Text: Application Circuits 5. T h e follow ing is a design ex am p le o f a 74H C c irc u it co n v erted in to a T C 9800 se rie s device DA TA I/O A B E L is used to design th e PL D . 5.1 Desig n w ith TC 9802 is an The f o l lo w in g e x am p le w here a sta n d a rd


    OCR Scan     		PDF