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Contextual Info: LTR G1 Tetlschniff : C - REVISION RECORD DATE REVISED PER ECO-11-005294 13APR11 Name HMR C 4, 65 t& 5 Schnitt : A ' A Schnitt : B - B , WftR f i f i - 9094-2 < 3 ,9 TI "öl Drahtgröfienbereich : 0,5 r 1,0 mm1 L e itu n g s q u e rs c h n itt in m m 2 CROSS-SECTION IN mm*

AR95X

Abstract: AZA MARKING CODE AR35 MARKING ALF A-R marking
Contextual Info: S TAÏWAN AR35 SERIES SEMICONDUCTOR 35.0 AMPS. High Current Button Rectifiers RoHS COMPLIANCE AR Features P la s lic m a te r ia l u s e d c a r r ie s U n C e rw ritB rs I M o ra to ry C lassification 94V-0 l o w cost construction u tilising void-free molded

SN7401

Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
Contextual Info: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S

TDK Power Supply MRW

Abstract: K-Line L line tda9151 TDA9151B
Contextual Info: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification

Contextual Info: m > CD CD O —I 5 g $ rm K to O > _ 73 $£ 5 è T3 OJ Ji > w » 1 £ MICRO-CHANGE ’8 0 ’ SERIES M ALE/M ALE PORTABLE CONNECTOR LEAD o H (-H <J M YE LLO W COMPOUND 3 If O P IN 5 f H PIN 2 -CABLE 1 PIN 4 PIN 5 3, 4 OR 5 CORE O Z " ° =r 33Ï -HO I/) _ ~0

SN7441

Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
Contextual Info: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS

Contextual Info: Preliminary specification Philips Sem iconductors Programmable deflection controller TDA9151B FE A T U R E S G en eral U • 6.75, 13.5 an d 27 M H z c lo c k fre q u e n c y II m ! BUS] • Few e xte rn a l c o m p o n e n ts • S y n c h ro n o u s logic

Contextual Info: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Thin silicon nitride Si3N4 films deposited using plasma-enhanced

Contextual Info: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

A101

Contextual Info: 3114 Series □upnn 2.0m m Flex Shroud Header Material: Housing: High Temperature Plastic UL94V-0. Contacts: Brass. Electrical Characteristics: Current Rating:2 AMP. Dielectric Withstanding VoltageAC 1000V For 1 minute. Insulator Resistance: 1000MQmin. at DC 500V.

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

Contextual Info: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA jiro.yota@skyworksinc.com Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have

SECAM Encoders

Abstract: 1470 LM TDA4510 TDA8501 nf03 SDIP32 TDA8505 UKA460 MKM73-1
Contextual Info: INTEGRATED CIRCUITS % S H IE T TDA8505 SECAM encoder Preliminary specification Supersedes data of May 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS • I 7110fl2b 007M533 A3? PHILIPS Philips Semiconductors Preliminary specification

UKA720

Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Contextual Info: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller

CEC4L-03C

Abstract: 125L 302G 303G 304G 307G FR301G FR307G
Contextual Info: E FR301G - FR307G TAIW AN SEMICONDUCTOR 3.0 A M PS . G lass Passivated Fast Recovery R ectifiers RoHS DQ-201AD C O M P L IA N C E -T J - 1.0 :25.1 :- .TùTWt MIN. Features ❖ r_ l G lass passivated chip junction. High efficiency. Low VF <• High c u rre n t c a p a b ility