bq4025
Abstract: bq4025Y
Text: bq4025/bq4025Y 256Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025Y
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bq4025
Abstract: bq4025Y
Text: bq4025/bq4025Y 256Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium
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bq4025/bq4025Y
256KX16
bq4025
304-bit
D0037CH
bq4025Y
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FFD 455
Abstract: BQ4025 bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g r a l c o n tro l c irc u itry a n d
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bq4025/bq4025Y
256KX16
bq4025
304-bit
FFD 455
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y BENCHM ARQ 256Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 bits. The in teg ral control circuitry an d lith
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
128Kx
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: BENCHMARK MICROELEC 3bE D jcjl BENCHMARQ • 137flfln 00QD277 0 BIBEN bC|4025/bq4025Y Preliminary 256Kx16 Nonvolatile SRAM T ^ L -2 ^ 1 7 Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized
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137flfln
00QD277
4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025/bq4025Y
bq4025
bq4025Y
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bq4025
Abstract: bq4025Y 137001
Text: bq4025/bq4025Y t j BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 2 6 2 ,1 4 4 w o rd s b y 16 b its . T h e integral control circuitry and lithium
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bq4025/bq4025Y
256Kx16
40-pin
bq4025
304-bit
i37aan
DG037CH
bq4025Y
137001
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Q4025
Abstract: BQ4025 bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its. The integral control circuitry and lithium
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OCR Scan
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PDF
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40-pin
bq4025/bq4025Y
256Kx16
bq4025
304-bit
q4025
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y Preliminary 256Kx16 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in t e g r a l c o n tro l c ir c u itr y a n d
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bq4025/bq4025Y
q4025
bq4025
256Kx16
40-pin
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y b BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium
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OCR Scan
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PDF
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
bq4025Y
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charger NiMh 4 ch
Abstract: clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note bq4013 BQ4025
Text: Nonvolatile SRAM s Benchmarq’s nonvolatile static random-access memories NVSRAMs integrate—in a single-DIP package—extremely low standby power SRAM, nonvolatile control circuitry, and a long-life lithium cell. The NVSRAMs combine secure nonvolatility (more than 10 years in the
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bq40l0
bq40lI
bq4013
bq40I4
bq4024
bq4015
bq4025
bq4115
bq40l6
bq4017
charger NiMh 4 ch
clock ic dip pack
bq20xx
soic 28
lead acid battery charger module
gas gauge
"lead acid"
BQ2002* NiMH charger application note
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BQ4025
Abstract: bq4025Y
Text: dcnci iwiARQ Nonvolatile Static RAM Family Summary Data Sheet Family Features General Description a -10% supply tolerance. No suffix denotes a -5% supply tolerance. >• D ata retention in the absence of power The CMOS nonvolatile static RAM NVSRAM fam ily is available in a
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BQ4025
Abstract: bq4025Y
Text: g g ilQ jiy y ^ Q Preliminary bC|4025/bC|4025Y 256Kx16 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection during power-up/power-down cycles > Industry-standard 40-pin 256K x 16 pinout >• Conventional SRAM operation;
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4025/bC
4025Y
256Kx16
40-pin
BQ4025
bq4025Y
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