BSS138
Abstract: transistor bss138
Text: May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products
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BSS138
OT-23
BSS138
transistor bss138
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BSS138 TO236
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
OT-23-3
O-236)
OT-23-3
QW-R502-271
BSS138 TO236
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Untitled
Abstract: No abstract text available
Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance
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BSS138
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
BSS138G-AE2-R
BSS138G-AL3-R
QW-R502-271
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BSS138G
Abstract: BSS138 TO236 BSS138
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves
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BSS138
OT-23-3
O-236)
BSS138G-AE2-R
QW-R502-271
BSS138G
BSS138 TO236
BSS138
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BSS138G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
OT-23-3
OT-323
QW-R502-271
BSS138G
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BSS138/J1
Abstract: BSS138 onr 20
Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter
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BSS138
OT-23
BSS138/J1
BSS138
onr 20
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bss138 MARKING
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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BSS138
AEC-Q101
J-STD-020
MIL-STD-202,
DS30144
bss138 MARKING
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BSS138G-AE3-R
Abstract: BSS138_G BSS138G BSS138L BSS138 BSS13
Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the
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BSS138
BSS138L
BSS138G
BSS138-AE3-R
BSS138L-AE3-R
QW-R502-271
BSS138G-AE3-R
BSS138_G
BSS138G
BSS138L
BSS138
BSS13
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BSS138
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage
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BSS138
J-STD-020
MIL-STD-202,
AEC-Q101
DS30144
BSS138
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BSS138-7
Abstract: BSS138 transistor bss138 bss138 MARKING
Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance
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BSS138
OT-23
BSS138-7
BSS138
transistor bss138
bss138 MARKING
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"MARKING CODE SS"
Abstract: marking code SS BSS138
Text: BSS138 N-Channel Enhancement-Mode MOSFET Low V t c u d o r TO-236AB SOT-23 P H C w e N N RE FET T Top View N E G GS(th) VDS 50V RDS(ON) 3.5Ω ID 220mA .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) 0.035 (0.9) .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)
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BSS138
O-236AB
OT-23)
220mA
OT-23
290mA,
440mA,
"MARKING CODE SS"
marking code SS
BSS138
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K38 mosfet
Abstract: BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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BSS138
AEC-Q101
J-STD-020
MIL-STD-202,
DS30144
K38 mosfet
BSS138 equivalent
equivalent of bss138
bss138 k38
BSS138-7-F
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transistor bss138
Abstract: bss138 bss138 MARKING BSS138 SS
Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance
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PDF
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BSS138
OT-23
transistor bss138
bss138
bss138 MARKING
BSS138 SS
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bss138 MARKING c38
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1
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Original
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PDF
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BSS138
AEC-Q101
J-STD-020
MIL-STD-202,
DS30144
bss138 MARKING c38
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Untitled
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification
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PDF
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BSS138
J-STD-020
MIL-STD-202,
AEC-Q101
DS30144
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BSS138
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage
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BSS138
J-STD-020
MIL-STD-202,
AEC-Q101
DS30144
BSS138
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mosfet low vgs
Abstract: Marking code SS
Text: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)
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BSS138
220mA
O-236AB
OT-23)
OT-23
220mA
290mA,
440mA,
mosfet low vgs
Marking code SS
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B5G1
Abstract: BSS138
Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products
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BSS138
OT-23
B5G1
BSS138
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sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
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BS107
BSS123
BS170
BSS138
BS108
BSN304
BSS89
IRFD310
IRFD420
IRFD210
sot23 BS170
2SK2671
P3NB60
IXFN27N80
IRFL014N
STP22NE10L
irf6348
IRF7305
rfp40n
IXTN21N100
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bss138
Abstract: bss138 50
Text: P A IR C H II- D MICDNDUCTQ R May 1995 tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products
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BSS138
SS138
bss138 50
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Silicon N-Channel Junction FET sot23
Abstract: bss138 MARKING transistor bss138 BSS138
Text: Philips Components Data sheet status Preliminary specification date of issue September 1990 FEATURES BSS138 N-channel enhancement mode vertical D-MOS FET PINNING - SOT223 PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance.
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BSS138
OT223
MB8160
Silicon N-Channel Junction FET sot23
bss138 MARKING
transistor bss138
BSS138
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fet n-channel pin configuration
Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Text: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage
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BSS138
OT223
MBB180
fet n-channel pin configuration
transistor 537 b 360
DMOSFET
Silicon N-Channel Junction FET sot23
vertical mosfet
BSS138
MBB180
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Untitled
Abstract: No abstract text available
Text: May 1995 F A IR C H IL D SEM IC ONDUCTO R tm BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products
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OCR Scan
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BSS138
BSS138
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