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    BU 103 A TRANSISTOR Search Results

    BU 103 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU 103 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC002-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC002-Gi1/4A1M-2APN8X-H1141

    4A1M-2APN8X-H1141

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC160-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC160-Gi1/4A1M-2APN8X-H1141 4A1M-2APN8X-H1141

    4A1M-2APN8X-H1141

    Abstract: H11-41
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC001-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC001-Gi1/4A1M-2APN8X-H1141 4A1M-2APN8X-H1141 H11-41

    PC040-GI1/4A1M-2APN8X-H1141

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC040-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC040-Gi1/4A1M-2APN8X-H1141 PC040-GI1/4A1M-2APN8X-H1141

    "4 DIGIT 7 Segment Display"

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC250-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC250-Gi1/4A1M-2APN8X-H1141 "4 DIGIT 7 Segment Display"

    CM100TF-24H

    Abstract: No abstract text available
    Text: CM100TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 100 Amperes/1200 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN U V W S N P


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    PDF CM100TF-24H Amperes/1200 135ns) 20-25kHz) D-7272 CM100TF-24H

    E1-57 X 35

    Abstract: 20-25kHz BUN DIODE CM75TF-28H
    Text: CM75TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/1400 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J R


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    PDF CM75TF-28H Amperes/1400 135ns) 20-25kHz) E1-57 X 35 20-25kHz BUN DIODE CM75TF-28H

    CM150TF-12H

    Abstract: transistor BU 102
    Text: CM150TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 150 Amperes/600 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J


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    PDF CM150TF-12H Amperes/600 20-25kHz) Drawi5-7272 CM150TF-12H transistor BU 102

    PC100 NPN

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC100-Gi1/4A1M-2APN8X-H1141


    Original
    PDF D-45466 PC100-Gi1/4A1M-2APN8X-H1141 PC100 NPN

    4A1M-2APN8X-H1141

    Abstract: No abstract text available
    Text: Subject to change without notice • Hans Turck GmbH & Co.KG 2002 • Edition: Hans Turck GmbH & Co.KG • Postfach • D-45466 Mülheim an der Ruhr • Telefon 02 08/49 52-0 • Telefax 02 08/49 52-264 Pressure sensor with two transistor outputs PC001V-Gi1/4A1M-2APN8X-H1141


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    PDF D-45466 PC001V-Gi1/4A1M-2APN8X-H1141 4A1M-2APN8X-H1141

    25b44

    Abstract: transistor 546 transistor c 546 b BU 103 A transistor MAS 20 RCA transistor BU 104 mas 6 rca ZD 103 ZD 103 ma diagram pulsa
    Text: A E C CORP 17E D Da a T 4 2 b GOGTMa? 4 BU 546 l? iE L iK £ K S \ l3 Q e le c t r o n ic O tatra Techno*og*es r - 3 3 - is Silicon NPN Power Transistor A p p lic a tio n s : Sw itching mode power supply Features: • In triple diffusion technique ' Short sw itching tim e


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    PDF DaaT42b r-23-13 Q02T4Sb T-33-13 QQET42t. f-33-13 25b44 transistor 546 transistor c 546 b BU 103 A transistor MAS 20 RCA transistor BU 104 mas 6 rca ZD 103 ZD 103 ma diagram pulsa

    TRANSISTOR D 2627

    Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


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    PDF r-33-13 T-33-13 2380T TRANSISTOR D 2627 Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    irfp 950

    Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
    Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6


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    PDF SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 transistor BUZ45 SGSP369 BUZ74 IRFP 740 IRF 950 SGSP239

    BUY75

    Abstract: No abstract text available
    Text: BUY 74, BUY 75, BUY 76 NPN Silicon power transistors for switching applications P re lim in a ry d a ta BU Y 74, B U Y 75 and B U Y 76 are triple-diffused NPN silicon power transistors in a case sim. to 3 A 2 DIN 41 872 TO -3 . The collector is electrically connected to the


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    PDF Q62702-U 62702-U Q62901-B BUY75

    THJ3821

    Abstract: NJ16 NJ32 THJ3369 THJ3370 THJ3458 THJ3459 THJ3460 THJ3819 THJ3822
    Text: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. ^3 I NC D 0SDM336 D O D B S ? 11] S • ALGR ■ SEMICONDS/ IC S 93D 03579 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oij V(BH)GSS Min. type THJ3369


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    PDF 05QM33Ã THJ3369 THJ3370 THJ3458 THJ4341 THJ4391 NJ132 THJ4392 THJ4393 THJ3821 NJ16 NJ32 THJ3459 THJ3460 THJ3819 THJ3822

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


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    PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546

    BS107 spice

    Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
    Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT


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    PDF PHB87N03LT PHP87N03LT PHB69N03LT PHD69N03LT PHP69N03LT PHB55N03LT PHD55N03LT PHP55N03LT PHB50N03LT PHP50N03LT BS107 spice BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 bsh201 SFE 7.2 k75-10

    up 3080 lg

    Abstract: PS 307 5A B1056 PS 307 2A 307F BU306F BU307F lg-5a ic 7294
    Text: 11 GOlöSbl 1 DEVELOPM ENT DATA BU306F BU307F This data sheet contains advance Information and specifications are subject to change without notice. N AMER PH IL IPS /DISCRETE 2SE D T-33-Ö? SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically


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    PDF BU306F BU307F OT186 bS3eL31 T-33-09 up 3080 lg PS 307 5A B1056 PS 307 2A 307F BU307F lg-5a ic 7294

    BUZ 21 SMD

    Abstract: No abstract text available
    Text: SIEMENS BUZ 103 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-22O SMD available Type Vfcs b ^% S on) Package Ordering Code BUZ 103 50 V


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    PDF O-22O O-220 C67078-S1352-A2 D5155 BUZ 21 SMD

    BUX83

    Abstract: BUX82 gg3b
    Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current


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    PDF BUX82 BUX83 BUX83 gg3b

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    8U406

    Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
    Text: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators


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    PDF 711005b BU406F BU407F OT186 8U406 BC317 Philips philips e3 407F flyback transformer philips BU407F Q030 407F Transistors

    BUZ73

    Abstract: BUZ73L
    Text: SIEMENS SIPMOS Power Transistors • • • • BUZ 73 AL BUZ 73 L N channel Enhancement mode Avalanche-rated Logic Level Type ^ DS ¡0 Te ^DS on P a c k a g e 1* Ordering Code BUZ 73 AL 200 V 5.5 A 37 ‘ C 0.4 a 1 0-22 0 AB C 67078-S 1328-A3 BUZ 73 L


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    PDF 67078-S 1328-A3 1328-A2 73L/BU SIL03295 BUZ73 BUZ73L