BUL52B
Abstract: No abstract text available
Text: Product Specification www.jmnic.com BUL52B Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN DESCRIPTION
|
Original
|
PDF
|
BUL52B
O-220C
BUL52B
|
BUL52B
Abstract: BUL56B
Text: Product Specification www.jmnic.com BUL52B Silicon Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN DESCRIPTION
|
Original
|
PDF
|
BUL52B
O-220C
BUL56B
BUL52B
BUL56B
|
800V PNP
Abstract: BUL52B pnp 400v 2A
Text: SavantIC Semiconductor Product Specification BUL52B Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION
|
Original
|
PDF
|
BUL52B
O-220C
800V PNP
BUL52B
pnp 400v 2A
|
BUL52BSMD
Abstract: No abstract text available
Text: BUL52BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed
|
Original
|
PDF
|
BUL52BSMD
O276AB)
15-Aug-02
BUL52BSMD
|
Electronic ballast 100W
Abstract: BUL52B transistor 800V 1A
Text: SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3
|
Original
|
PDF
|
BUL52B
100mA
Electronic ballast 100W
BUL52B
transistor 800V 1A
|
BUL52B
Abstract: No abstract text available
Text: BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 6.3 1.3 Designed for use in electronic ballast applications 15.1 3.6 Dia. 15.1 • • • • • 1 2 3 14.0 1.3 0.85 0.5
|
Original
|
PDF
|
BUL52B
BUL52B
|
Untitled
Abstract: No abstract text available
Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES
|
Original
|
PDF
|
BUL52BFI
100mA
|
Untitled
Abstract: No abstract text available
Text: SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3
|
Original
|
PDF
|
BUL52B
100mA
|
BUL52BFI
Abstract: transistor 800V 1A transistor 400v 8a to220
Text: SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 FEATURES
|
Original
|
PDF
|
BUL52BFI
100mA
BUL52BFI
transistor 800V 1A
transistor 400v 8a to220
|
BUL52B
Abstract: pnp 400v 2A pnp 400V 3A
Text: Inchange Semiconductor Product Specification BUL52B Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ・Fast switching ・High energy rating APPLICATIONS ・Designed for use in electronic ballast applications PINNING PIN
|
Original
|
PDF
|
BUL52B
O-220C
BUL52B
pnp 400v 2A
pnp 400V 3A
|
NPN 250W
Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
Text: Search Results Part number search for devices beginning "BUL47" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUL47A NPN TO3 300V 40A 25 - 4/25 20MHz 200W
|
Original
|
PDF
|
BUL47"
BUL47A
BUL47B
20MHz
BUL50"
BUL50A
BUL50A-T247
BUL50B
10MHz
NPN 250W
NPN 400V 40A
BUR13
BUL58
|
SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
|
Original
|
PDF
|
734TL
UWEB-MODEM-34
HCS412/WM
TLV320AIC10IPFB
100MB
NEON250
GA-60XM7E
BLK32X40
BLK32X42
SKIIP 33 nec 125 t2
skiip 613 gb 123 ct
RBS 6302 ericsson
SKIIP 513 gb 173 ct
THERMISTOR ml TDK 150M
pioneer PAL 010a
Project Report of smoke alarm using IC 555 doc
SKiip 83 EC 125 T1
ericsson RBS 6000 series INSTALLATION MANUAL
Ericsson Installation guide for RBS 6302
|
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
|
Original
|
PDF
|
2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
|
dinverter 768r
Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.
|
Original
|
PDF
|
HEF4527BT
HEF4531BT
HEF4534BP
HEF4534BT
MSP-STK430X320
AD9054/PCB
AD9054BST-135
IPS521G
IPS521S
IRL2203S
dinverter 768r
G7D-412S
Ericsson Installation guide for RBS 6201
OMRON G7d
TH3 thermistor
6201 RBS ericsson user manual
TMS77C82NL
reed relay rs 349-355
i ball 450 watt smps repairing
RBS -ericsson 6601
|
|
transistor 800V 1A
Abstract: No abstract text available
Text: Mil =X= mi SEME BUL52B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm f* 10.2 -► , 4.5 1.3 3.6 Dia. 1 2 Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
|
OCR Scan
|
PDF
|
BUL52B
T0220
100mA
transistor 800V 1A
|
Untitled
Abstract: No abstract text available
Text: bGE D • fllBBlß? DQOGS1B 57b H S I I L B SEMELAB PLC SEMELAB T~-33-\3 BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A T A D im ensio ns in m m D esigned for use in electronic ballast lighting applications
|
OCR Scan
|
PDF
|
BUL52B
300/iS
|
T0251
Abstract: T0-251
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A
|
OCR Scan
|
PDF
|
BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
BUL51A
BUL51B
T0251
T0-251
|
Untitled
Abstract: No abstract text available
Text: IMI = fï= IMI SEME BUL52BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm <* 10.2 *\ 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
|
OCR Scan
|
PDF
|
BUL52BFI
T0220
100mA
|
2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1
|
OCR Scan
|
PDF
|
BYV34-300SM
BYV34-400ASM
BYV34--
400RSM
400SM
BYV34-500ASM
BYV34-500RSM
BYV34-500SM
LM137-SM
2n3866s
DIODE 69a LM
2N3904CSM
2N3904DCSM
2N3904D
LM7805sm
2N3055E
LM7808S
LCC3 weight
bfy82
|
IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
|
OCR Scan
|
PDF
|
BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
|
BUL52A
Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN
|
OCR Scan
|
PDF
|
DD453
BUL50A
S0T93
10min
BUL50B
T0220
BUL51A
30min
DUL51B
BUL52A
SOT93
BUP43
BUP47
BUP49
BUP53
BUL50A
BUL50B
BUL51A
|
G675A
Abstract: BUL53A BUL53B G175 G275A G375A G575A G875A G875DE G975A
Text: 46E T> m 6 1 3 3 1 6 7 DDDDHlb 5 3 0 • S f l L B DIFFUSION SEMEFABI S E H E L A B DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB "P G175 chip family J LTD * Z S 'V l The G 175 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new
|
OCR Scan
|
PDF
|
-126x126
-56x29mils
G575A
G67SA
G375A
G275A
G975A
G875A
G875DE
BUL53B
G675A
BUL53A
G175
|
bup43
Abstract: No abstract text available
Text: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25
|
OCR Scan
|
PDF
|
BUL46A
BUL46B
BUL47A
BUL47B
BUL48A
BUL48B
BUL49A
BUL49B
BUL50A
BUL50B
bup43
|
mje13009 equivalent
Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal
|
OCR Scan
|
PDF
|
BUL74A
MJE13009
BUL36I
T022SGO
T0220
BUV46
MJE13004
BUL53A
mje13009 equivalent
MJEI3008
BUV46 equivalent
buu26
ST MJE13007
mje13007 equivalent
|