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    BUZ 211 Search Results

    BUZ 211 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ211 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ211 Unknown FET Data Book Scan PDF
    BUZ211 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ211 Siemens SIPMOS Power Transistors Scan PDF
    BUZ211 Siemens Power Transistors Scan PDF

    BUZ 211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


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    PDF O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309

    Untitled

    Abstract: No abstract text available
    Text: <z3smi-L.onau.etoi \J-*ioaucti, Line. iJ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ 72 L N channel Enhancement mode Avalanche-rated Logic Level Pin1 Pin 2 G Type Vbs ID RDS(on) Package BUZ 72 L 100V 10A 0.2 Q TO-220 AB


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    PDF O-220

    transistor buz 210

    Abstract: BUZ21 BUZ 21 C67078-S1338-A2
    Text: SIPMOS Power Transistor ● ● ● ● BUZ 21 L N channel Enhancement mode Logic Level Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 21 L 100 V 21 A 0.085 Ω TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 25 ˚C


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    PDF O-220 C67078-S1338-A2 transistor buz 210 BUZ21 BUZ 21 C67078-S1338-A2

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


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    PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    SM1251

    Abstract: 74LS11 pin configuration BUZ 215 diagram
    Text: S3C7295/P7295 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7295 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the S3C7295 offers an


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    PDF S3C7295/P7295 S3C7295 SAM47 up-to-704-dot 80-pin S3P7295. S3P7295 SM1251 74LS11 pin configuration BUZ 215 diagram

    BUZ 215 diagram

    Abstract: F80H S3C7281
    Text: S3C7281 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7281 is a SAM48 core-based 4-bit CMOS single-chip microcontroller. It is built around the SAM48 core CPU and contains ROM, RAM. 14 I/O lines, buzzer and inverted buzzer output, and LCD driver/controller with an


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    PDF S3C7281 S3C7281 SAM48 up-to-64-dot. 30-Pin 0/SEG17 BUZ 215 diagram F80H

    induction cooker circuit diagram

    Abstract: tm1628 induction cooker free circuit diagram S3F84B8 FGA15N120 IGBT INDUCTION COOKER CIRCUIT DIAGRAM LM339 N induction cooker circuit diagram S3F84B8_DEMO_V0.0 control circuit of induction cooker lm339 pwm diagram diagram induction cooker
    Text: S3F84B8 All-in-One IH Cooker Revision 0.00 May 2010 Application Note  2010 Samsung Electronics Co., Ltd. All rights reserved. Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the


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    PDF S3F84B8 S3F84B8 induction cooker circuit diagram tm1628 induction cooker free circuit diagram FGA15N120 IGBT INDUCTION COOKER CIRCUIT DIAGRAM LM339 N induction cooker circuit diagram S3F84B8_DEMO_V0.0 control circuit of induction cooker lm339 pwm diagram diagram induction cooker

    BUZ 215 diagram

    Abstract: KS57C21632 KS57P21632 SAM47 AS50D-A BT 9843
    Text: Product Overview Address Spaces Addressing Modes Memory Map KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


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    PDF KS57C21632/P21632 KS57C21632 SAM47 up-to-896-dot 100-pin COM15 COM13 BUZ 215 diagram KS57P21632 SAM47 AS50D-A BT 9843

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings


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    PDF O-204 C67078-A1102-A2 C67078-A1100-A2 fi235b05 0E35bG5

    BUZ210

    Abstract: Diode MFW 16 buz 210 Diode MFW 25 BUZ211 TC-130-W MFW diode
    Text: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 • N channel • Enhancement mode • FREDFET Type v DS 500 V /d 10.5 A ^DS on o .6 a P ackage1) O rdering Code BUZ 210 TO-204 AA C67078-A1102-A2 BUZ 211 500 V 9.0 A 0.8 Q TO-204 AA C67078-A1100-A2 Maximum Ratings


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    PDF O-204 C67078-A1102-A2 C67078-A1100-A2 55/150/BUZ 35bQ5 21Q/BUZ 235b05 BUZ210 Diode MFW 16 buz 210 Diode MFW 25 BUZ211 TC-130-W MFW diode

    BUZ 1045

    Abstract: BUZ p channel SIEMENS 3 TB 40 17 - 0A BUZ211 BUZ 385 buz 211
    Text: SIEMENS BUZ 210 BUZ 211 SIPMOS Power MOS Transistors VDS lD ^ D S o n BUZ 384 BUZ 385 = 500 V = 9 . 0 . . . 10.5 A = 0-6 •■• 0.8 Q • N channel • • FREDFET Enhancem ent mode • Packages: T O -2 04 A A (TO-3), T O -2 18 A A (T O P -3)1) Type


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    PDF 7078-A 102-A 100-A2 209-A 210-A BUZ 1045 BUZ p channel SIEMENS 3 TB 40 17 - 0A BUZ211 BUZ 385 buz 211

    siemens igbt BSM 25GD 100D

    Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
    Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11


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    PDF O-220AB O-220 2x100 2x150 100GAL siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d

    BUZ211

    Abstract: UZ210 kds 210
    Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode FREDFET Type V DS BUZ 210 500 V 10.5 A 0.6 Í2 BUZ 211 500 V 9.0 A 0.8 U ^DS on Maxim um Ratings Parameter Continuous drain current, Tc = 25 ‘ C Pulsed drain current, Tc = 25 "C


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    PDF O-204 67078-A1102-A2 C67078-A1100-A2 210/BÜ SIL02771 BUZ211 UZ210 kds 210

    PC 014

    Abstract: No abstract text available
    Text: SIEMENS BUZ 12 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 12 Vbs 50 V b 42 A RoS on Package Ordering Code 0.028 n TO-220 AB C67078-S1331-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1331-A2 PC 014

    BUZ21

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • • N channel Enhancement mode Logic Level Avalanche-rated Type BUZ 21 L 100 V 21 A 0.085 Maxim um Ratings Parameter Continuous drain current, 7C = 25 °C Pulsed drain current, 7C = 25 ”C Avalanche current, limited by 7] max


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    PDF O-220 BUZ21

    BUP 300

    Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
    Text: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8


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    PDF 0C67O47-A2O66-A2 0C67O47-A2O71-A2 0C67O47-A2O72-A2 0C67O47-A225O-A2 0C67O47-A2251-A2 0C67O47-A2252-A2 0C67O47-A2253-A2 0C67O47-A2254-A2 0C67O78-A1008-A8 0C67O78-A1OO8-A9 BUP 300 al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313

    bsm10gd100dn1

    Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
    Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2


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    PDF E-6288 BSM10GD100DN1 C67079-A1000-A6 C67079-A1040-A11 C67079-A1040-A17 C67079-A1001-A6 C67079-A1041-A5 C67079-A10436 E-6327 BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52

    BUP101

    Abstract: BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393
    Text: Bestellnummern/Ordering Codes Type Ordering code BRT 11 H BRT 11 M B R T 12H BRT 12 H Option 1 BRT 12 H (Option 6) BRT 12 H (Option 7) BRT 12 H (Option 1+6) BRT 12 H (Option 1+7) BRT 12M BRT 1 3 H BRT 1 3 M BRT 21 H BRT 21 M BRT 22 H BRT 22 H (Option 1)


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    PDF 150GB 0610T C67078-S3126-A2 C67078-S3133-A2 C67078-S3128-A2 C67078-S3121-A2 C67078-S3120-A2 C67078-S3131-A2 67078-S3115-A2 C67078-S3113-A2 BUP101 BTS412A buz 607 BTS 304 BUZ 324 BSM181C BTS 413 bsm681f Q62702-S616 62702-S393

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


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    PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    FREDFET

    Abstract: 8A74
    Text: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse


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    PDF fl235b05 C67078-S1401-A2 C67078-A3207-A2 C67078-A1102-A2 C67078-A1100-A2 C67078-A1400-A2 C67078-A3209-A2 C67078-A3210-A2 C67078-A1105-A2 C67078-A3205-A2 FREDFET 8A74

    0AB7

    Abstract: BUZ p channel BUZ384
    Text: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code


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    PDF C67078-S1401-A2 C67078-A3207-A2 O-220 O-218 67078-A1100-A2 C67078-A1400-A2 C67078-A3209-A2 C67078-A3210-A2 0AB7 BUZ p channel BUZ384

    BUZ210

    Abstract: Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3207-A2 C67078-A3209-A2
    Text: SIE M EN S A K T I E N 6 E S E L L S C H A F SIE T> WÊ û 2 3 5 bO S GOMSnS SGS B I S I E 6 t S IE M E N S 35 ' / / SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancem ent types with high speed reverse


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    PDF 023Sb05 T-35-// C67078-S1401-A2 O-220 C67078-A3207-A2 O-218 C67078-A1102-A2 O-204 C67078-A1100-A2 BUZ210 Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3209-A2

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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