BUZ71
Abstract: BUZ71 ST
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
|
Original
|
PDF
|
BUZ71
O-220
175oC
BUZ71
BUZ71 ST
|
BUZ71
Abstract: BUZ71 dc to ac
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET TYPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
|
Original
|
PDF
|
BUZ71
O-220
175oC
BUZ71
BUZ71 dc to ac
|
BUZ71
Abstract: BUZ71 application BUZ71 dc to ac
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 17A TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.1 Ω 17 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
|
Original
|
PDF
|
BUZ71
O-220
175oC
BUZ71
BUZ71 application
BUZ71 dc to ac
|
BUZ71
Abstract: stmicroelectronics datecode BUZ71 ST
Text: BUZ71 N - CHANNEL 50V - 0.085Ω - 14A -TO-220 STripFET POWER MOSFET T YPE BUZ71 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.1 Ω 14 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
|
Original
|
PDF
|
BUZ71
-TO-220
175oC
O-220
BUZ71
stmicroelectronics datecode
BUZ71 ST
|
BUZ71
Abstract: BUZ71FI
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
|
Original
|
PDF
|
BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
BUZ71FI
|
BUZ71
Abstract: Morocco buz71fi BUZ71FI
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
|
Original
|
PDF
|
BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
Morocco buz71fi
BUZ71FI
|
schematic diagram dc-ac welding inverter
Abstract: schematic diagram dc-ac welding inverter CIRCUIT schematic diagram UPS schematic diagram welding inverter schematic diagram dc-ac inverter schematic diagram welding inverter control schematic diagram UPS 600 Power free high current smps circuit diagram BUZ71 application inverter irf840
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
|
Original
|
PDF
|
BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
schematic diagram dc-ac welding inverter
schematic diagram dc-ac welding inverter CIRCUIT
schematic diagram UPS
schematic diagram welding inverter
schematic diagram dc-ac inverter
schematic diagram welding inverter control
schematic diagram UPS 600 Power free
high current smps circuit diagram
BUZ71 application
inverter irf840
|
BUZ71
Abstract: BUZ71FI iso vg 46
Text: BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.1 Ω < 0.1 Ω 18 A 12 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
|
Original
|
PDF
|
BUZ71
BUZ71FI
100oC
175oC
O-220
ISOWATT220
BUZ71
BUZ71FI
iso vg 46
|
irf540n irf640
Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S
|
Original
|
PDF
|
BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
irf540n irf640
IRF630 complementary
IRF840 complementary
irf630 irf640
IRF730 complementary
irfp460 complementary
MOSFET IRF540n complementary
Complementary MOSFETs buz11
IRF9540 complementary
Irfp250 irfp460
|
complementary of irf830
Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3
|
Original
|
PDF
|
BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
complementary of irf830
IRF630 complementary
irf630 irf640
irf540n irf640
IRF640 irf510
IRFP150
Irfp250 irfp460
IRF640
IRFP150N
IRF610 complementary
|
irf540 mosfet control motor
Abstract: std29nf03l ignition switch on coil smart igbt gear box motor 12v 12v dc motor igbt control VBG15NB37 STP12PF06 morocco smart ignition igbt rain SENSOR STP60NE06-16
Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06
|
Original
|
PDF
|
O-220
STP12PF06
STP80NF03L-04
STP80NE03L-06
STP60NE03L-10
STP60NE03L-12
STP60NF03L
STP3015L
STP40NE03L-20
STP40NF03L
irf540 mosfet control motor
std29nf03l
ignition switch on coil smart igbt
gear box motor 12v
12v dc motor igbt control
VBG15NB37
STP12PF06 morocco
smart ignition igbt
rain SENSOR
STP60NE06-16
|
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
|
Original
|
PDF
|
BUZ10
BUZ11
BUZ11A
BUZ71
BUZ71A
BUZ72A
BUZ80A
IRF520
IRF530
IRF540
SSH6N80
rfp60n06
IRF3205 IR
BUK417-500AE
SFP70N03
BUZ91A
2SK2717
STMicroelectronics
BUZ22
IXFH13N50
|
VBG15NB37
Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06
|
Original
|
PDF
|
O-220
STP12PF06
STP80NF03L-04
STP80NE03L-06
STP60NE03L-10
STP60NE03L-12
STP60NF03L
STP3015L
STP40NE03L-20
STP40NF03L
VBG15NB37
STP3020L
IRF540 application
STP24NF10
BUZ10
STGP10NB60S
stp80* equivalent
smart ignition igbt VBG15NB37
BUZ11
STD38NF03L
|
BUZ71 application
Abstract: No abstract text available
Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features
|
Original
|
PDF
|
BUZ71
O220AB
TA9770.
BUZ71 application
|
|
Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS
|
Original
|
PDF
|
BUZ71
BUZ71A
O-220AB
|
BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
|
Original
|
PDF
|
BUZ71
TA9770.
O-220AB
BUZ71 application
BUZ71
TB334
|
BUZ71 application
Abstract: TT220 BUZ71 BUZ71FI
Text: BUZ71 BUZ71FI Æ 7 SGS-THOMSON ^ 7 # [ÜD^OEllLIgTrKOliOigi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^O S on BUZ71 BUZ71 FI 50 V 50 V 0.1 n 0.1 Si 'o ' 14 A 12 A • VERY FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE, REDUCED SIZE AND COST
|
OCR Scan
|
PDF
|
BUZ71
BUZ71FI
O-220
500ms
150-C)
BUZ71 application
TT220
BUZ71FI
|
Untitled
Abstract: No abstract text available
Text: BUZ71 N - CHANNEL 50V - 0.085ft - 14A -TO-220 STripFET POWER MOSFET TYPE BUZ71 V dss 50 V R d Id S o ii < 0.1 Q. 14 A . • TYPICAL RDS(on) = 0.085 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
|
OCR Scan
|
PDF
|
BUZ71
085ft
-TO-220
T0-220
|
TT220
Abstract: transistor t220 BUZ71 dc to ac TT 220
Text: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,
|
OCR Scan
|
PDF
|
BUZ71
BUZ71FI
BUZ71
500ms
TT220
transistor t220
BUZ71 dc to ac
TT 220
|
buz71
Abstract: BUZ71A
Text: BUZ71, BUZ71A f T S B c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) •d (V) (n ) (A) BUZ71 50 0.10 14 BUZ71A 50 0.12 13 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
|
OCR Scan
|
PDF
|
BUZ71,
BUZ71A
O-22QAB
BUZ71
BUZ71A
10peration
|
BUZ71FI
Abstract: No abstract text available
Text: S G S -T H O M S O N iL iO T ô «S BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ71 BUZ71FI • ■ . ■ . . . V dss RDS(on) 0.1 0.1 50 V 50 V a a Id 18 12 A A AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
PDF
|
BUZ71
BUZ71FI
O-220
ATT220
BUZ71/FI
O-220
ATT220
BUZ71FI
|
Untitled
Abstract: No abstract text available
Text: BUZ71 Semiconductor Data Sheet June 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFET File Number 2418.2 Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
|
OCR Scan
|
PDF
|
BUZ71
TA9770.
|
transistor 647
Abstract: No abstract text available
Text: rZT SGS-THOMSON * 7M. [ÄliSimitgTßMOgS BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils Al A u /C r/N i/A u
|
OCR Scan
|
PDF
|
BUZ71
transistor 647
|
Untitled
Abstract: No abstract text available
Text: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
|
OCR Scan
|
PDF
|
BUZ71A
-TO-220
BUZ71
|