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    BUZ76A Search Results

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    BUZ76A Price and Stock

    Rochester Electronics LLC BUZ76A

    N-CHANNEL POWER MOSFET
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    DigiKey BUZ76A Bulk
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    Infineon Technologies AG BUZ76A

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    Bristol Electronics BUZ76A 50
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    Quest Components BUZ76A 40
    • 1 $7.5
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    Rochester Electronics BUZ76A 10,600 1
    • 1 $0.5833
    • 10 $0.5833
    • 100 $0.5483
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    Siemens BUZ76A

    2.6 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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    Quest Components BUZ76A 602
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    BUZ76A 200
    • 1 $3.272
    • 10 $3.272
    • 100 $1.636
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    STMicroelectronics BUZ76A

    2.6 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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    Quest Components BUZ76A 480
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    BUZ76A 9
    • 1 $3.92
    • 10 $2.45
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    Harris Semiconductor BUZ76A

    BUZ76A - 400V, N-Channel Power MOSFET '
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    Rochester Electronics BUZ76A 640 1
    • 1 $0.5833
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    • 100 $0.5483
    • 1000 $0.4958
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    BUZ76A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ76A Infineon Technologies N-Channel SIPMOS Power Transistor, 400V, TO-220, 2.50 ?, 2.7A Original PDF
    BUZ 76A Infineon Technologies Conventional Power MOS Transistors Original PDF
    BUZ76A Intersil 2.6A, 400V, 2.500 ?, N-Channel Power MOSFET Original PDF
    BUZ76A Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ76A Siemens Original PDF
    BUZ76A Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ76A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ76A Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    BUZ76A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUZ76A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ76A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ76A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUZ76A Unknown FET Data Book Scan PDF
    BUZ76A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ76A Siemens Power Transistors Scan PDF
    BUZ76A STMicroelectronics Shortform Data Book 1988 Short Form PDF

    BUZ76A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ76A

    Abstract: TA17404 BUZ76 TB334
    Text: BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.500Ω (BUZ76 field effect transistor designed for applications such as


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    PDF BUZ76A BUZ76 TA17404. BUZ76A TA17404 TB334

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


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    PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    LM1011N

    Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
    Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44


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    PDF ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 LM1011N JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


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    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


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    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    Untitled

    Abstract: No abstract text available
    Text: 3 0 E » • 0 0 5 *1 7 3 1 Ä 7 S G S -T H O M S O N ^ 7 # ^D [^ Q [i[Li(g¥ ®K3D(gi s 4 ■ G s - p 3 q - l \ - t h o m s o n BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • TYPE V Dss ^DS(on) B U Z 76 A 400 V 2 .5 ß •d - 2 .6 A H IG H V O L T A G E - F O R O F F -L IN E


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    PDF BUZ76A

    diode D100E

    Abstract: BUZ76A T0220AB
    Text: PowerMOS transistor_ _ BUZ76A_ N AMER PHI LI P S/ DI S CR ET E ObE D • bbSaTBl DGlMMBb 1 ■ r-ï^-n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF BUZ76A bLSBT31 T-39-11 diode D100E BUZ76A T0220AB

    BUZ76A

    Abstract: No abstract text available
    Text: ¿ = 7 SCS THOMSON BUZ76A ilO g[^ö i!Li ]I[HMO©§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS(on) BUZ76A 400 V 2.5 ß 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE


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    PDF BUZ76A O-220 BUZ76A

    Untitled

    Abstract: No abstract text available
    Text: BUZ76A Semiconductor Data Sheet October 1998 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF BUZ76A TA17404.

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 OQMSbE? 35H •SG TH SGS-THOMSON BUZ76A IIL J O « ! N - CHANNEL EN H ANC EM ENT MODE PO W ER MOS TRAN SISTO RS TYPE BUZ76A V dss RDS on Id 400 V < 2.5 Q 3 .8 A ■ TYPICAL RDS(on) = 1.65 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


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    PDF BUZ76A O-220

    buz76a

    Abstract: No abstract text available
    Text: £Z7 SGS-THOMSON BUZ76A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ76A 400 V R DS on 2.5 fi 2.6 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:


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    PDF BUZ76A O-220 00A//xS buz76a

    Untitled

    Abstract: No abstract text available
    Text: BUZ76A {£ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 2.6A, 400V TOP VIEW • rDS on) = 2 .5 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics


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    PDF BUZ76A BUZ76A 92GS-44236

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


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    PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


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    PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


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    PDF O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


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    PDF P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


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    PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


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    PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


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    PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10