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    BUZ80 Search Results

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    BUZ80 Price and Stock

    Infineon Technologies AG BUZ80A

    MOSFET N-CH 800V 3.6A TO220AB
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    DigiKey BUZ80A Tube 500
    • 1 -
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    • 1000 $1.94368
    • 10000 $1.94368
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    STMicroelectronics BUZ80A

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    Bristol Electronics BUZ80A 385
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    Quest Components BUZ80A 47
    • 1 $4.83
    • 10 $3.542
    • 100 $3.22
    • 1000 $3.22
    • 10000 $3.22
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    STMicroelectronics BUZ80

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    Bristol Electronics BUZ80 83
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    Quest Components BUZ80 66
    • 1 $8.55
    • 10 $8.55
    • 100 $5.2725
    • 1000 $5.2725
    • 10000 $5.2725
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    SGS Thomson BUZ80

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    Bristol Electronics BUZ80 50
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    STMicroelectronics BUZ80FI

    2.1 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ80FI 16
    • 1 $1.875
    • 10 $1.725
    • 100 $1.5
    • 1000 $1.5
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    Find more BUZ80 price and stock on Findchips.com

    BUZ80 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ 80 Infineon Technologies Conventional Power MOS Transistors Original PDF
    BUZ80 Infineon Technologies N-Channel SIPMOS Power Transistor, 800V, TO-220, 4.00 ?, 3.1A Original PDF
    BUZ80 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ80 Siemens Original PDF
    BUZ80 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ80 STMicroelectronics TRANS MOSFET N-CH 800V 3.4A 3TO-220 Original PDF
    BUZ80 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    BUZ80 STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF
    BUZ80 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ80 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ80 Unknown FET Data Book Scan PDF
    BUZ80 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ80 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ80 Siemens Power Transistors Scan PDF
    BUZ 80A Infineon Technologies Conventional Power MOS Transistors Original PDF
    BUZ80A Infineon Technologies N-Channel SIPMOS Power Transistor, 800V, TO-220, 3.00 ?, 3.0A Original PDF
    BUZ80A Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ80A Siemens Original PDF
    BUZ80A Siemens SIPMOS Power Transistor (N channel Enhancement mode) Original PDF
    BUZ80A STMicroelectronics N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS Original PDF

    BUZ80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ80

    Abstract: BUZ80FI transistor BUZ80
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI transistor BUZ80

    BUZ80A

    Abstract: BUZ80a equivalent DD 127 D TRANSISTOR
    Text: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A O-220 100oC BUZ80A BUZ80a equivalent DD 127 D TRANSISTOR

    BUZ80

    Abstract: buz80 MOSFET
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF BUZ80 O-220AB BUZ80 buz80 MOSFET

    BUZ80

    Abstract: BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80 equivalent BUZ80FI equivalent BUZ80FI schematic diagram dc-ac welding inverter CIRCUIT schematic diagram welding inverter transistor BUZ80

    Untitled

    Abstract: No abstract text available
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80e

    BUZ80A

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80A CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF BUZ80A O-220AB BUZ80A

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    BUZ80AFI

    Abstract: BUZ80A BUZ80AF
    Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80AFI BUZ80A BUZ80AF

    BUZ80A

    Abstract: No abstract text available
    Text: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A BUZ80AFI 100oC O-220 ISOWATT220 BUZ80A

    BUZ80A

    Abstract: No abstract text available
    Text: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80A O-220 100oC BUZ80A

    BUZ80

    Abstract: BUZ80FI
    Text: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 4Ω < 4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ80 BUZ80FI 100oC O-220 ISOWATT220 BUZ80 BUZ80FI

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F m E D I OQöTbMS b3b?aSM 3 I MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA BUZ80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed, low loss power switching applications, such


    OCR Scan     		PDF BUZ80A AN569,

    BUZ80AFI

    Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
    Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF BUZ80A BUZ80AFI BUZ80A BUZ80AFI 800Vds 7T5ci237 045b45 BUZ80A/BUZ80AFI BUZ80AF k2800 Y125 dg45b

    UZ80A

    Abstract: No abstract text available
    Text: SGS-THOMSON £j ï ULKgraMOeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI • . . . . . . V dss RDS on Id 800 V 800 V <3 0 < 3 0. 3.8 A 2.4 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF BUZ80A BUZ80AFI UZ80A UZ80AFI UZ80A

    ot 306

    Abstract: No abstract text available
    Text: * 5 SGS-THOMSON !LiOT iQ £I 7 buzso BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI V dss R DS(on Id 800 V 800 V < 4 a <4 a 3.4 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m A V A LA N C H E R U G G E D N E S S TE C H N O LO G Y


    OCR Scan     		PDF BUZ80FI BUZ80 ot 306

    Philips KS 40 Temperature Control

    Abstract: BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH
    Text: PowerMOS transistor N AMER PH IL IP S / D I SC RE T E BUZ80 GbE D m bfaSB'm 0014S4E . 7 • T-2Î-W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ80 0014S4E T0220AB; Philips KS 40 Temperature Control BUZ80 transistor Ip BUZ80 transistor BUZ80 T-39-U T0220AB transistor 2TH

    Untitled

    Abstract: No abstract text available
    Text: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ80A O-220

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ80 N AMER PHILIPS/DISCRETE ObE D • bbSBTai 001454E 7 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ80 001454E BUZ80_ bbS3T31 T-39-11

    BUZ80A

    Abstract: No abstract text available
    Text: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2


    OCR Scan     		PDF BUZ80A O-220 C67078-A1309-A3 BUZ80A

    BUZ80AF

    Abstract: BUZ80A BUZ80AFI
    Text: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ80A BUZ80AFI BUZ80AFI O-220 ISOWATT220 BUZ80A/BUZ80AFI SCQ5970 BUZ80AF

    wm9 transistor

    Abstract: GC2145
    Text: ¿57 S G S -T H O M S O N ¡m e ra « B U Z80 buzsofi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80 BUZ80FI V dss RDS on Id 800 V 800 V < 4 a < 4 0. 3.4 A 2 .1 A • TYPICAL RDS(on) = 3.3 Q. . ■ . . . . AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF BUZ80 BUZ80FI BUZ80/FI ISQWATT220 wm9 transistor GC2145