Untitled
Abstract: No abstract text available
Text: WSD501H WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current 8.3ms1/2 Sine Wave
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WSD501H
100mA
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WSD501H
Abstract: BV45
Text: WSD501H * “G” Lead Pb -Free 1 2 SOD-323 WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current
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WSD501H
OD-323
100mA
WSD501H
BV45
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BV 1 501
Abstract: SNK500-2x12-3 kaschke 096.906 BV 501 kaschke SP-E 16 75KV K2006 Kaschke sp-e 13 4
Text: Technical Data Sheet Part designation: Customer part no.: Kaschke Göttingen SP-E 13/6 SNK500-2x12-3 d:/bv/zn1864.dwg Customer: EI 3,81 a. 4 5 Uout 12V 7 6 Uout 12V 8 Uin 1 Remarks : AII 8 1 0,6 11,43±0,3 AI AIII EII EIII 10,16±0,3 max.15,1 max.17,5 max.14,3
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SNK500-2x12-3
/bv/zn1864
E13/6
K2006
44kHz
50Hz/2s)
BV 1 501
SNK500-2x12-3
kaschke 096.906
BV 501
kaschke SP-E 16
75KV
Kaschke sp-e 13 4
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IRF 504
Abstract: EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38
Text: IHA Vishay Dale Filter Inductors High Current FEATURES • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IHA-205 IHA-301 IHA-302 IHA-303 IHA-304 IHA-305 IHA-501 IHA-502 IHA-503
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MIL-I-23053/5,
IHA-101
IHA-102
IHA-103
IHA-104
IHA-105
IHA-201
IHA-202
IHA-203
IHA-204
IRF 504
EB 203 D
DALE PT 30-2
VISHAY MARKING 2U
eb 102
vishay EB
eb 203
EB 202 D
EB marking code
marking code EB 38
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nec 2401
Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE150-501N04A
nec 2401
DE150-501N04A
200W MOSFET POWER AMP
DE-150-501N04
rf power mosfet
50MEG
kp60
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400P
Abstract: DE475-501N44A Directed Energy
Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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DE475-501N44A
30MHz
400P
DE475-501N44A
Directed Energy
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nec 2401
Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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DE150-501N04A
nec 2401
501N04
QGS 80W 30 ohm
mosfet High-Speed Switching 100mhz
bd9883
DE150-501N04A
Directed Energy
Directed
RF POWER MOSFET
DE-150-501N04
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DE375-501N21A
Abstract: "RF MOSFETs" 400P
Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE375-501N21A
50MHz
DE375-501N21A
"RF MOSFETs"
400P
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DE475-501N44A
Abstract: 400P PIN diode SPICE model
Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE475-501N44A
30MHz
DE475-501N44A
400P
PIN diode SPICE model
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DE275-501N16A
Abstract: 92-0002 DE275-501N16
Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE275-501N16A
DE275-501N16A
92-0002
DE275-501N16
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400P
Abstract: DE375-501N21A mosfet SPICE MODEL
Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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DE375-501N21A
50MHz
400P
DE375-501N21A
mosfet SPICE MODEL
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DE275-501N16A
Abstract: KP58
Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE275-501N16A
DE275-501N16A
KP58
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DE275X2-501N16A
Abstract: No abstract text available
Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
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DE275X2-501N16A
DE275X2-501N16A
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200W MOSFET POWER AMP
Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE150-501N04A
501N04A
200W MOSFET POWER AMP
DE150-501N04A
rf power mosfet
900 v 9 amp mosfet
PIN diode SPICE model
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DE275X2-501N16A
Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
DE275X2-501N16A
"RF MOSFETs"
RF POWER MOSFET
275X2-501N16A
DE275X2
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DE375-501N21A
Abstract: 400P PIN diode SPICE model
Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE375-501N21A
50MHz
DE375-501N21A
400P
PIN diode SPICE model
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DE275-501N16A
Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500
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DE275-501N16A
DE275-501N16A
501N16A
gsm Handset Circuit Diagram
PIN diode SPICE model
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DE475-501N44A
Abstract: 10-15V 400P PIN diode SPICE model
Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE475-501N44A
30MHz
DE475-501N44A
10-15V
400P
PIN diode SPICE model
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Untitled
Abstract: No abstract text available
Text: ePurge X Solid State Purge Controller Applied Analytics Data Sheet No. DS-501A — Revised 19 June 2013 An ultra-slim, next generation purging & pressurization device. In order to prevent fire or explosion, instrument enclosures are often “purged” of flammable gas. Before cycling power to the
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DS-501A
DS-501A:
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GES5819
Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20S6535
100mA)
MPSA20
MPSA55
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VN10KN
Abstract: VN10KN9 vn10k
Text: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices
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VN10KN9
VN10KN3
300ns,
VN10K
VN10KN
vn10k
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MPS6566
Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50
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GES5819
GES5820
GES5821
MPSA05
MPSA06
MPSA12
MPSA13
MPSA14
MPSA20VES
MPS6566
MPSA20
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in4606
Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
in4606
IN4150
1N4150
D035
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50n60
Abstract: 50N100 AC SWITCH
Text: MOS/IGBT AC switch • Fast AC switch ■ Easy to turn-off like a MOSFET or IGBT ■ Applications - lighting control - AC motor control - matrix inverter C o n fig u ra tio n Typ e BV v o lta g e ► N ew VM K 165-007T > FM K 75-01F Rated current A T„ = 25 °C
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165-007T
75-01F
90-02T2
50N60
50-12BD
50n60
50N100
AC SWITCH
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