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    BYV10

    Abstract: BYV10-40 BYV10-20 BYV10-30
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses


    Original     		PDF M3D119 BYV10 BYV10-20 BYV10-40 BYV10-30

    DIODE byv10-20

    Abstract: sod81 BYV10-40 SC01 Mounting 1996 1 BYV10 BYV10-20 BYV10-30 M3D119 byv1040
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes


    Original     		PDF M3D119 BYV10 BYV10-20 BYV10-40 DIODE byv10-20 sod81 SC01 Mounting 1996 1 BYV10-30 M3D119 byv1040

    BYV10-40

    Abstract: BYV10-30 DIODE byv10-20 BYV10-20 SC01 Mounting 1996 1 BYV10 PHILIPS BYV10 BYV1020 Philips applications BYV1040
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes


    Original     		PDF M3D119 BYV10 BYV10-20 BYV10-40 BYV10-30 DIODE byv10-20 SC01 Mounting 1996 1 PHILIPS BYV10 BYV1020 Philips applications BYV1040

    BAX12 equivalent

    Abstract: 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840
    Text: Philips Semiconductors Small-signal Transistors and Diodes Index TYPE NUMBER TYPE NUMBER TYPE NUMBER 1N821 1PS76SB70 BAL74 1N821 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A 1PS79SB70 BAL99W 1N825 1PS88SB48 BAS16 1N825A 1PS89SB14 BAS16T 1N827 1PS89SB15 BAS16W


    Original     		PDF 1N821 1PS76SB70 BAL74 1PS79SB10 BAL74W 1N823 1PS79SB40 BAL99 1N823A BAX12 equivalent 1N4532 1n823a BAT721S BAX18 equivalent plva600a 1PS301 1PS59SB10 BFS20W BF840

    sod87 Melf

    Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1n5819 melf 1PS76SB62 1PS76SB21 BAS70 MELF SOD532
    Text: Schottky diodes Selection guide With over 13% market share in terms of quantity, Philips is among the top five worldwide suppliers of small signal diodes and transistors.We offer a very broad portfolio – from conventional leaded products to the latest ultra-small lead-free


    Original     		PDF

    DATASHEET OF IC 741

    Abstract: IC 741 OPAMP OF IC 741 op-amp ic 741 op-amp OP-AMP ic 741 741 adjustable current limiter lm358 current limiter DIFFERENCE BETWEEN LM358N, LM358 AN philips MKT dc motor speed control lm358
    Text: Application Note I C s f o r M o t o r C o n t r o l Evaluation board for the TDA5143/TDA5144 Report No: EIE/AN94002 R. Galema Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Motor Control Current limiter TDA5143 TDA5144 Date : 27 June 1995


    Original     		PDF TDA5143/TDA5144 EIE/AN94002 TDA5143 TDA5144 TDA5143/5144. TDA5143T TDA5144AT TDA5144T TDA5143/51444 LM358N DATASHEET OF IC 741 IC 741 OPAMP OF IC 741 op-amp ic 741 op-amp OP-AMP ic 741 741 adjustable current limiter lm358 current limiter DIFFERENCE BETWEEN LM358N, LM358 AN philips MKT dc motor speed control lm358

    PH 33D

    Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
    Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614


    Original     		PDF BY558 BY558 OD115 BY578 BY578 BY584 OD61A 1N4004 BY614 PH 33D PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40

    SCR TRIGGER PULSE TRANSFORMER

    Abstract: 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic
    Text: APPLICATION NOTE 31 LATCH-UP PROTECTION OF CMOS ICs LATCH-UP PROTECTION OF CMOS ICs By RonAN-31 Vinsant INTRODUCTION In most applications, the triggering of the parasitic SCR results in the destruction of the IC. The only time destruction does not occur is when the supply current to the device is


    Original     		PDF AN-31 SCR TRIGGER PULSE TRANSFORMER 1N270 diode equivalent 1N270 equivalent LTC4266 SCR 214 TC426 equivalent SCR PULSE TRANSFORMER diode germanium 1n270 SCR IC CHIP scr driver ic

    ctx12s

    Abstract: CTX12SL BYV10-40 equivalent CTX-12SL STPS3100 FMPG3F BYT200PIV400 EQUIVALENT BYD33D BYW29-200 equivalent STPS10100
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 ctx12s CTX12SL BYV10-40 equivalent CTX-12SL STPS3100 FMPG3F BYT200PIV400 EQUIVALENT BYD33D BYW29-200 equivalent STPS10100

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    AN763

    Abstract: scr gate drivers ic 1N270 diode equivalent diodes 1n270 SCR TRIGGER PULSE TRANSFORMER BYV10-30 diodo Zener 4.1v TC426 diode germanium 1n270 germanium transistor pnp
    Text: AN763 Latch-Up Protection For MOSFET Drivers Author: Cliff Ellison Microchip Technology Inc. Source P+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note


    Original     		PDF AN763 DS00763C-page AN763 scr gate drivers ic 1N270 diode equivalent diodes 1n270 SCR TRIGGER PULSE TRANSFORMER BYV10-30 diodo Zener 4.1v TC426 diode germanium 1n270 germanium transistor pnp

    Amperex hl

    Abstract: No abstract text available
    Text: AN31 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET


    Original     		PDF DS00763A-page Amperex hl

    PHILIPS SCR

    Abstract: BYV1030 equivalent 1N270 diode equivalent
    Text: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET


    Original     		PDF AN763 sup00 DS00763A* 0763A-page PHILIPS SCR BYV1030 equivalent 1N270 diode equivalent

    1N270 diode equivalent

    Abstract: BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270
    Text: M AN763 Latch-Up Protection For MOSFET Drivers Author: Microchip Technology Inc. Source P+ VS+ INTRODUCTION Most CMOS ICs, given proper conditions, can “latch” like an SCR , creating a short circuit from the positive supply voltage to ground. This application note


    Original     		PDF AN763 D-85737 DS00763B-page 1N270 diode equivalent BYV10-30 digital triggering scr diodo Zener 4.1v SCR TRIGGER PULSE TRANSFORMER SCR gate drive circuit AN763 TC913 germanium transistor pnp 1N270

    C5V6 ph

    Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
    Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER


    Original     		PDF 1N821 1N4733A 1N821A 1N4734A 1N823 1N4735A 1N823A C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    TC429

    Abstract: CMOS IC TC426 mosfet vs SCR Microchip EEPROM IC AN-763 TC913 pic32 PWM BYV1030 1N914
    Text: ご注意： この日本語版ドキュメントは 参考資料としてご使用の上、最新情報に つきましては、必ず英語版オリジナルをご参照いただきますようお願い します。 AN763 ラッチアップから MOSFET ドライバを保護する


    Original     		PDF AN763 TC426( TC426 TC426 TC429 CMOS IC mosfet vs SCR Microchip EEPROM IC AN-763 TC913 pic32 PWM BYV1030 1N914

    Untitled

    Abstract: No abstract text available
    Text: LNBP8L, LNBP9L LNBP10L, LNBP11L LNB supply and control voltage regulator Features • Simplest integrated solution for LNB remote supply and control ■ 500 mA guaranteed output current ■ Dual input supply for reducing power dissipation DFN package ■


    Original     		PDF LNBP10L, LNBP11L LNBP9L/11L LNBP8L/10L LNBP11L

    BAV45A

    Abstract: do-34 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30 BAS45 BAT81
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSSTSl OGltilô'i S ■ T ' 0 3 - ' 0 £f Small Signal Devices 11 LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V (m Ai ¥ IR 20 125 50 225 5pA 1nA Vp (V) 1.00 0.80 Vft @ m f 5 125 @ r Ip (rnAK I 1°5 • ■


    OCR Scan     		PDF febS3131 T-03-09 BAV45A BAS45 DO-34 BAT81 200nA BAT82 DO-34 ZENER 1N827A 1N829 BAV45 Zener Diodes 6.2 V BYV10-30

    BAV45A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE «D • bbSaTBl aaiblfi'l S ■ 'f'03-'0ct Small Signal Devices LOW LEAKAGE DIODES TYPE PKG BAV45A BAS45 TO-18 DO-34 Vr V 20 125 ¥ |r 50 225 5pA 1nA (m A l (S VF (V ) 1.00 0.80 Vr m 5 125 @ r If (m A> I 10 ■ 5 c <f - " 600


    OCR Scan     		PDF BAV45A BAS45 DO-34 BAT81 BAT82 BAT83 BAT85 BAT86 BYV10-20 BYV10-30 BAV45A

    DIODE byv10-20

    Abstract: BYV10 BYV10-30 BYV10-40 BYV10-20 sod81 BYV1020
    Text: Philips Semiconductors Product specification Schottky barrier diodes BYV10 series FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass


    OCR Scan     		PDF BYV10 BYV10-20 BYV10-40 711002b 010322b DIODE byv10-20 BYV10-30 sod81 BYV1020

    DO-34

    Abstract: BA231 BAV45A BAT81 1N825A
    Text: Small Signal Leaded Devices Detection Diode Diode Capacitance Type BA231 Pkg VR V If (mA) cd (pF) DO-35 50 200 1.2 @ VR (V) and VF (mV) f (MHz) 'F {(xA) 360-420 1 (w 10 Low Leakage Diodes •f (V) (mA) TO-18 DO-34 20 125 50 225 5pA 1nA •r @ u. BAV45,A


    OCR Scan     		PDF BA231 DO-35 BAV45 BAS45 DO-34 BA480 BA481 BAT81 BAT82 BAT83 DO-34 BA231 BAV45A 1N825A