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    C 945 P EQUIVALENT Search Results

    C 945 P EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    C 945 P EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tca 945

    Abstract: 12A200S IR10 RCR-2368B MARKING CODE JN marking 2501 TCA 208
    Text: OUTLINE Type TCA Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.


    Original     		PDF

    7343L

    Abstract: tca 4001
    Text: OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity. This ensures higher permissible ripple current and excellent noise absorption performance on high-frequency circuits.


    Original     		PDF

    RN10U

    Abstract: No abstract text available
    Text: P-TCA-E006 OUTLINE (Type TCA) Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.


    Original     		PDF P-TCA-E006) RN10U

    Untitled

    Abstract: No abstract text available
    Text: No. P-TCA-002 DATE 2007-11 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.


    Original     		PDF P-TCA-002

    TCA 160c

    Abstract: RCR-2368B m1 marking code marking code M1 marking A7 4001
    Text: No. P-TCA-003 DATE 2008-10 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.


    Original     		PDF P-TCA-003 TCA 160c RCR-2368B m1 marking code marking code M1 marking A7 4001

    AN1294

    Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
    Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E

    945 TRANSISTOR

    Abstract: 700B AN1294 GP413
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original     		PDF STAP57030 PowerSO-10RF STAP57030 945 TRANSISTOR 700B AN1294 GP413

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    SC70-5L

    Abstract: diode 5L
    Text: Specification for release Customer : Ordercode: Description: Package: 82402374 TVS Diode Array WE-TVS SC70-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 Lines - unidirectional • Provide ESD Protection for each line to


    Original     		PDF SC70-5L 5/50ns) UL94V-0 D-74638 diode 5L

    MRF181

    Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
    Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF181/D MRF181SR1 MRF181ZR1 MRF181/D MRF181 300 uF 450 VDC Mallory Capacitor

    c 945 p equivalent

    Abstract: SC70-6L
    Text: Specification for release Customer : Ordercode: Description: Package: 82402375 TVS Diode Array WE-TVS SC70-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to


    Original     		PDF SC70-6L 5/50ns) UL94V-0 D-74638 c 945 p equivalent

    TC50025

    Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
    Text: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF181SR1 MRF181ZR1 TC50025 MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181

    capacitor ceramic variable RF

    Abstract: variable capacitor 945 TRANSISTOR 700B M243 SD57030 TSD57030 c 945 TRANSISTOR equivalent
    Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION


    Original     		PDF SD57030 SD57030 TSD57030 capacitor ceramic variable RF variable capacitor 945 TRANSISTOR 700B M243 TSD57030 c 945 TRANSISTOR equivalent

    tr array sot23

    Abstract: No abstract text available
    Text: Specification for release Customer : Ordercode: Description: Package: 82402305 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to


    Original     		PDF OT23-6L 5/50ns) UL94V-0 D-74638 tr array sot23

    PD85035C

    Abstract: 945 TRANSISTOR M243
    Text: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85035C 2002/95/EC PD85035C ID14138 945 TRANSISTOR M243

    945 TRANSISTOR

    Abstract: JESD97 M243 PD85035C transistor marked 12w
    Text: PD85035C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85035C 2002/95/EC PD85035C 945 TRANSISTOR JESD97 M243 transistor marked 12w

    SD57045

    Abstract: 28/BZW06-171 equivalent M243 TSD57045
    Text: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel


    Original     		PDF SD57045 SD57045 TSD57045 28/BZW06-171 equivalent M243 TSD57045

    SD57045

    Abstract: M250 SD57045-01 TSD57045-01
    Text: SD57045-01  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel


    Original     		PDF SD57045-01 SD57045-01 TSD57045-01 SD57045 M250 TSD57045-01

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF184 MRF184S, 31JUL04 31JAN05

    Untitled

    Abstract: No abstract text available
    Text: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel


    Original     		PDF SD57045 SD57045 TSD57045

    0843 12L

    Abstract: No abstract text available
    Text: SD57045-01  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel


    Original     		PDF SD57045-01 SD57045-01 TSD57045-01 0843 12L

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage


    Original     		PDF MWE6IC9100N--2 MWE6IC9100N MWE6IC9100NBR1 MWE6IC9100N--2

    M R029

    Abstract: h 945 p
    Text: 4 3 RELEASED FOR PUBUCAT10N THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. D 18.00 [457.2] — .079 [2.01] TYP — .154 [3.91] .160 [4.06] —► TYP 0.059 [1.50] .063 [1.60] TYP 4 )-$ — .069 [1.75] 2 PLCS


    OCR Scan     		PDF PUBUCAT10N 23FEB95 24JUN98 qmp34754 home/qmp34754/robersto 24JUN98 M R029 h 945 p

    M R029

    Abstract: R029
    Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. DIST AA 53 REVISIONS LTR .154 [3.91] .160 [4.06] TYP .069 [1.75] 2 PLCS —•(£) (j) -(j) j? ' BUS □ -s a ­ RECEPTACLE c 1 / S 1 1 /


    OCR Scan     		PDF 26JUL99 13JUL98 23FEB95 13JUL98 amp34754 M R029 R029