Untitled
Abstract: No abstract text available
Text: KELCO C25 INLINE FLOW SWITCH High performance 25mm inline flow switches with advanced features make the C25 an ideal choice for many system designers. FEATURES One piece brass body All position mounting Diesel and oil models available Choice of two electrical modules
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MIXA81WB1200TEH
Abstract: No abstract text available
Text: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
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MIXA81WB1200TEH
60747and
MIXA81WB1200TEH
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Untitled
Abstract: No abstract text available
Text: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
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MIXA60WH1200TEH
60747and
20111111b
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9V bridge rectifier ic
Abstract: MIXA81WB1200TEH
Text: MIXA81WB1200TEH tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = 290 A I C25 90 A I C25 = I FSM = 1200 A VCE sat = = 120 A 1.8 V VCE(sat) = 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
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MIXA81WB1200TEH
60747and
9V bridge rectifier ic
MIXA81WB1200TEH
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IC2560
Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Text: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
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MIXA60WH1200TEH
60747and
20111111b
IC2560
thyristor module 700a
NTC-10 ohm
MIXA60WH1200TEH
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Untitled
Abstract: No abstract text available
Text: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number
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MIXA50WB600TED
60747and
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Untitled
Abstract: No abstract text available
Text: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 600 V VCES = 650 V I DAV = 139 A I C25 I FSM = 550 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number
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MIXA50WB600TED
60747and
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D65VML
Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Text: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .
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V9-T2-15
V9-T2-17
V9-T2-19
V9-T2-22
V9-T2-23
V9-T2-26
V9-T2-32
V9-T2-36
V9-T2-37
V9-T2-41
D65VML
D65CEK1C5A
C25DRJ350
S811V
XTMC6A01
0A95 diode
C25DND325
XTMF9A00
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G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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32N60BU1
Abstract: 32N60B h32n60b e5200 32N60BU
Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C
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OCR Scan
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS)
32N60BU1
32N60B
h32n60b
e5200
32N60BU
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ASN100
Abstract: IXSH45N100 bv 1500 sts
Text: Low VCE sat IGBT IXSH/IXSM 45N100 V CES ^C25 v CE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES ^ Vco„ Td = 25°C to 150°C; RGE = 1 Mi2 = 25°C to 150°C V0ES VGEM ^C25 1000 V 1000 V Continuous ±20
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OCR Scan
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45N100
O-247
O-204
ASN100
IXSH45N100
bv 1500 sts
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igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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OCR Scan
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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40N30BD1
Abstract: No abstract text available
Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o
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OCR Scan
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IXGH40N30BD1
IXGH40N30BD1S
O-247SMD
40N30BD1S)
O-247
360VTj
40N30BD1
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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OCR Scan
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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OCR Scan
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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OCR Scan
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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1XGH24N60A
Abstract: b236 b237 TXYS IXGH/24N60A
Text: inixYS HiPerFAST IGBT V CES IXGH 24N60A ^C25 v * CE sat l fi Symbol Test Conditions 4 Maximum Ratings VCES Tj = 25°C to 150°C 600 VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES v GEM Continuous ±20 V T ransient ±30 V ^C25 Tc -2 5«C 48 A ^090 Tc =90°C
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OCR Scan
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24N60A
O-247
24N60AU1
B2-37
1XGH24N60A
b236
b237
TXYS
IXGH/24N60A
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C
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OCR Scan
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IXGH30N60BD1
150PC
15CFC;
O-247
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60N60
Abstract: G 60N60
Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75
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OCR Scan
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60N60
O-247
60N60
G 60N60
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms
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OCR Scan
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32N50BU1
Cto150
O-247
32NS0BU1
B2-47
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PDF
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Untitled
Abstract: No abstract text available
Text: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads
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OCR Scan
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50N60AU1
O-264
IXGK56N60AU1
B2-97
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C
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OCR Scan
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38N60U1
O-247
B2-85
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PDF
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ixgk32n60
Abstract: No abstract text available
Text: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms
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OCR Scan
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32N60A
32N60AS
T0-247
32N60AS)
O-247
B2-65
ixgk32n60
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PDF
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