VGA001
Abstract: No abstract text available
Text: VGA001 Variable Gain Amplifier • 100Hz - 100MHz Variable Gain Amplifier • Fully differential input and output • Can be used as single-ended input to differential output • 3.3V Supply • Designed in C3N 0.35µ process (See General Notes 1) 1.0 Description
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VGA001
100Hz
100MHz
600uV
100MHz.
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MMBT3906
Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
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MMBT3906
MMBT3904)
AEC-Q101
J-STD-020
MIL-STD-202,
DS30059
MMBT3906
MMBT3906Q-7-F
transistor marking c3n
K3N diodes
npn k3n
MMBT3906Q
MMBT3906-13-F
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Mls 7 segment
Abstract: No abstract text available
Text: KS0010 4-Line MLS Multi Line Selection Power Supply IC FOR STN LCD May. 1999. Ver. 0.0 Prepared by: Jun-Seok, Han jeongb@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express
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KS0010
KS0010
Mls 7 segment
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C13FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 3 F II • ■ u 'm mm ■ mm ■ 'mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C13FU
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TENTATIVE 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = —1.7V (Max.) (IC = - 3 A , Iß — —0.3A) MAXIMUM RATINGS (Ta = 25°C)
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2SB1667
----10Vf
20/zs
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Untitled
Abstract: No abstract text available
Text: 2SC5351 TOSHIBA TO SH IBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE <;r >5 3 R1 HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER A N D POW ER SUPPLY t • High Voltage : V ç e O~450V High Speed : tr = 0.5/¿s Max. , tf= 0.3//s (Max.) (Iç = 0.8A)
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2SC5351
2SC5351
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transistor marking c3n
Abstract: Transistor Marking C3 marking UM 5pin c3n transistor marking C3 5-pin D marking PNP pnp npn dual emitter connected
Text: C3N Transistor, digital, dual, PNP and NPN, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) package • package marking: C3 • package contains an NPN (DTC114EKA) and a PNP (DTA114EKA) digital transistor, each with two resistors. Base of DTr2 is
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DTC114EKA)
DTA114EKA)
SC-70)
transistor marking c3n
Transistor Marking C3
marking UM 5pin
c3n transistor
marking C3 5-pin
D marking PNP
pnp npn dual emitter connected
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c3n transistor
Abstract: No abstract text available
Text: TO SH IB A 2SC5279 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5279 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • Excellent Switching Times : tr = 1.0,«s Max. tf = 1.0,«s (Max.) (Iq = 0.8A)
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2SC5279
61001EAA1
c3n transistor
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transistor marking c3n
Abstract: No abstract text available
Text: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 HF • ■ 'm ■ mmr ■ U nit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C10F
transistor marking c3n
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transistor marking c3n
Abstract: No abstract text available
Text: TO SH IB A HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M 9 f 1 fi F 11 • ■ ■ w u 'm ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN2C10FU
transistor marking c3n
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2C12FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri7Fll • ■ u 'm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL
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HN2C12FU
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transistor marking c3n
Abstract: No abstract text available
Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage
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HN3C09F
N3C09F
transistor marking c3n
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2C11FU
Abstract: No abstract text available
Text: TOSHIBA H N 2C 11 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri1Fll • ■ u 'm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2531 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE < ; n i mm mmr s 3 1 w POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , ^ 3 .2 ± 0 .2 2J± 0 2 Low Collector Saturation Voltage : V C E s a t = 0.5V (Typ.) Oc = 2.5A, IB = 0.25A) High Power Dissipation
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2SD2531
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5317 T O SH IBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE <;r s 3 1 7 MT V • m V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l . M T U 1 ET 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency
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2SC5317
--15mA,
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2SD1947A
Abstract: No abstract text available
Text: 2SD1947A TO SH IB A 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS t • High DC Current Gain : hFE = 500-1500 Ic = lA Low Collector Saturation Voltage
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2SD1947A
2SD1947A
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transistor HD marking
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN3C14F
transistor HD marking
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C13F
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transistor marking c3n
Abstract: No abstract text available
Text: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C14FU
transistor marking c3n
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C11FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3ri1Fll • ■ u 'm mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C11FU
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transistor marking c3n
Abstract: No abstract text available
Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC
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2SC5262
transistor marking c3n
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)
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HN3C11F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5263 T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS Low Noise Figure : NF = 1.7dB f=2GHz High Gain : Gain = lld B (f= 2 G H z ) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SC5263
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A
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2SD1407A
2SB1016A
10hts
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