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    TDK Corporation C4532X5R1H475MT

    Multilayer Ceramic Capacitor, 4.7 uF, 50 V, � 20%, X5R, 1812 [4532 Metric] - Tape and Reel (Alt: C4532X5R1H475MT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus C4532X5R1H475MT Reel 143 Weeks 1,000
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    C4532X5R1H475M Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU185 – September 2006 TPS5410EVM-203 1-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4


    Original     		PDF SLVU185 TPS5410EVM-203 TPS5410

    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z

    HPA173-001

    Abstract: HPA173 MSS1278-183MLB TPS5430 SLVU157 MSS1278-223MLB HPA173-002 TPS5431
    Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		PDF SLVU157 TPS5430/31EVM-173 TPS5430 TPS5431 HPA173-001 HPA173 MSS1278-183MLB SLVU157 MSS1278-223MLB HPA173-002

    C1608JB1H472K

    Abstract: C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C1608JB1H472K C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    HPA173-001

    Abstract: C4532X7R1E106KT TPS5431 HPA173-002 TPS5430 MSS1278-183MLB HPA173
    Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		PDF SLVU157 TPS5430/31EVM-173 TPS5430 TPS5431 HPA173-001 C4532X7R1E106KT HPA173-002 MSS1278-183MLB HPA173

    J209

    Abstract: MW7IC3825GN MW7IC3825GNR1 MW7IC3825NR1
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC3825N Rev. 1, 11/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage


    Original     		PDF MW7IC3825N MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 J209 MW7IC3825GN

    C5750JF1E476Z

    Abstract: C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C
    Text: w w w . D a t a S h e e t 4 U . c o 1/15 m General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z C4532JF1H106Z C3216JF1C106Z C5750JB1E226M C1608JF1C105Z C2012JB1E684K C4532JF C3216JB0J476 C2012JF1A106Z C0603CH1H0R5C

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    UCD90120

    Abstract: MOSFET R166
    Text: User's Guide SLVU347 – December 2009 Evaluation Module for UCD90120 and UCD90124 This User’s Guide describes the evaluation modules EVM for the UCD90120 (UCD90120EVM) and UCD90124 (UCD90124EVM). The EVM contains evaluation and reference circuitry for the UCD90120 and


    Original     		PDF SLVU347 UCD90120 UCD90124 UCD90120 UCD90120EVM) UCD90124EVM) UCD90124. MOSFET R166

    C2012JB1A226M

    Abstract: C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M
    Text: 持蚊薮頭盲管頭塀窮否匂 匯違喘 C 狼双 Type: C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: April 2010 ●芝墮坪否，壓短嗤嚠御議秤趨和嗤辛嬬個序才延厚，萩嚠參疎盾。


    Original     		PDF C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C2012JB1A226M C2012JB1C106K C2012X6S0J226K C2012X5R1C226K C2012X6S0J226M C3225X7R1H335K C1608X5R1C475K C2012X5R1C226M C5750Y5V1C107Z C1608X5R1A106M

    J4-89

    Abstract: J534
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    B540C-13-F

    Abstract: HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001
    Text: User's Guide SLVU211 – April 2007 TPS5450EVM-254 5-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 1 Test Setup and Results . 3


    Original     		PDF SLVU211 TPS5450EVM-254 TPS5450 B540C-13-F HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001

    ATC100B0R5BT500XT

    Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955

    C4532JF1H106

    Abstract: C2012JF C2012JF1A106Z C4532JF1C476 C4532JF C2012JF1C C1608JF1H104 C3216JF1C106Z C5750JF1E476Z C3216JF1H225Z
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C4532JF1H106 C2012JF C2012JF1A106Z C4532JF1C476 C4532JF C2012JF1C C1608JF1H104 C3216JF1C106Z C5750JF1E476Z C3216JF1H225Z

    C4532JF1H106Z

    Abstract: C4532X5R1C336M tdk capacitors c4532 C4532X7R1E226M C4532Y5V1A107Z C4532JF1A107Z C4532JF1H106 C4532JF1C476Z C4532X7R1H685M C4532JB1E226M
    Text: TDK Equivalent Circuit Model Library Jun. 15, 2007 Model Type: Simple Model Capacitors / C4532 Series CH Circuit Diagram Circuit Parameters Part No. C1[pF] L1[nH] R1[ohm] R2[Gohm] C4532CH1H473J 47000 C4532CH1H683J 0.7 0.0126 100 68000 0.7 0.0106 100 C4532CH1H104J 100000


    Original     		PDF C4532 C4532CH1H473J C4532CH1H683J C4532CH1H104J C4532CH1H154J C4532CH1H224J C4532C0G1H473J C4532C0G C4532JF1H106Z C4532JF1H106Z C4532X5R1C336M tdk capacitors c4532 C4532X7R1E226M C4532Y5V1A107Z C4532JF1A107Z C4532JF1H106 C4532JF1C476Z C4532X7R1H685M C4532JB1E226M

    C4532X7R1E226M

    Abstract: C4532X7R1C336M C4532X7R1C226M C4532X7R1E156M C4532Y5V1H106Z C4532 C4532CH1H104J CC1812 C4532X7R1H475M C4532JF1H106Z
    Text: 1/4 REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products or discontinue production of a product listed in this catalog without prior notification.


    Original     		PDF C4532Y5V1C476Z C4532JF1A107Z C4532Y5V1A107Z C4532X7R1E226M C4532X7R1C336M C4532X7R1C226M C4532X7R1E156M C4532Y5V1H106Z C4532 C4532CH1H104J CC1812 C4532X7R1H475M C4532JF1H106Z

    C4532

    Abstract: C4532CH1H104J CC1812 C4532JB1H225K
    Text: SMD, General Use C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low residual inductance assures superior frequency


    OCR Scan     		PDF 15fJF] C4532X5R1C156M C4532X5R1C226M C4532X5R1C336M C4532X5R1A336M C4532X5R1A476M C4532X5R0J686M C4532X5RCU107M C4532 C4532CH1H104J CC1812 C4532JB1H225K