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    C4532X5R1H Price and Stock

    TDK Corporation C4532X5R1H685M250KA

    CAP CER 6.8UF 50V X5R 1812
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    DigiKey C4532X5R1H685M250KA Cut Tape 999 1
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    C4532X5R1H685M250KA Digi-Reel 999 1
    • 1 $1.38
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    C4532X5R1H685M250KA Reel 500 500
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    Avnet Americas C4532X5R1H685M250KA Reel 36 Weeks 500
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    Mouser Electronics C4532X5R1H685M250KA 555
    • 1 $1.21
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    • 1000 $0.419
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    Newark C4532X5R1H685M250KA Reel 500
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    New Advantage Corporation C4532X5R1H685M250KA 1,000 1
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    TDK Corporation C4532X5R1H685K250KA

    CAP CER 6.8UF 50V X5R 1812
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C4532X5R1H685K250KA Cut Tape 19 1
    • 1 $1.48
    • 10 $0.933
    • 100 $0.6418
    • 1000 $0.6418
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    C4532X5R1H685K250KA Digi-Reel 19 1
    • 1 $1.48
    • 10 $0.933
    • 100 $0.6418
    • 1000 $0.6418
    • 10000 $0.6418
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    C4532X5R1H685K250KA Reel 500
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    Avnet Americas C4532X5R1H685K250KA Reel 36 Weeks 500
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    Mouser Electronics C4532X5R1H685K250KA 309
    • 1 $1.39
    • 10 $0.711
    • 100 $0.665
    • 1000 $0.45
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    Avnet Abacus C4532X5R1H685K250KA Reel 41 Weeks 500
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    TDK Corporation C4532X5R1H475MT

    Multilayer Ceramic Capacitor, 4.7 uF, 50 V, � 20%, X5R, 1812 [4532 Metric] - Tape and Reel (Alt: C4532X5R1H475MT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus C4532X5R1H475MT Reel 143 Weeks 1,000
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    C4532X5R1H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C4532X5R1H685K250KA TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 50V 10% X5R 1812 Original PDF
    C4532X5R1H685M250KA TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 50V 20% X5R 1812 Original PDF

    C4532X5R1H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C1005JB

    Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.


    Original     		C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005JB C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU185 – September 2006 TPS5410EVM-203 1-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4


    Original     		SLVU185 TPS5410EVM-203 TPS5410 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] PDF

    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D PDF

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 PDF

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C PDF

    NI-1230-4H

    Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N PDF

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 PDF

    MRF5S21045N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045N PDF

    IC SEM 2004

    Abstract: PTC THERMISTOR TDK push-pull DC-dc converter TDK Ferrite Core PC44 P8205T BI-Tech ptc 100 rtd PTC TDK n1c thermistor HIP2101
    Text: ISL6740, ISL6741 Data Sheet January 2004 Flexible Double Ended Voltage and Current Mode PWM Controllers FN9111.2 Features • Precision Duty Cycle and Deadtime Control The ISL6740, ISL6741 family of adjustable frequency, low power, pulse width modulating PWM voltage mode


    Original     		ISL6740, ISL6741 FN9111 ISL6741 ISL6740) ISL6741) IC SEM 2004 PTC THERMISTOR TDK push-pull DC-dc converter TDK Ferrite Core PC44 P8205T BI-Tech ptc 100 rtd PTC TDK n1c thermistor HIP2101 PDF

    dubilier CLP

    Abstract: B340A LTC3770 LTC3770EG LTC3770EUH Si4884 33a sot23 diode 12v 30A regulator
    Text: LTC3770 Fast No RSENSETM Step-Down Synchronous Controller with Margining, Tracking and PLL DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n n Wide VIN Range: 4V to 32V ±0.67% 0.6V Reference Voltage Output Voltage Tracking Capability Programmable Margining


    Original     		LTC3770 200kHz 100ns LTC3713 LTC3731 600kHz; LTC3778 3770fc dubilier CLP B340A LTC3770 LTC3770EG LTC3770EUH Si4884 33a sot23 diode 12v 30A regulator PDF

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z PDF

    CRCW08054701FKEA

    Abstract: MWE6IC9100N ZO 607 MA MWE6IC9100GNR1 MWE6IC9100NBR1 MWE6IC9100NR1 A114 A115 AN1977 AN1987
    Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on - chip matching that makes it usable from 869 to 960 MHz. This multi - stage


    Original     		MWE6IC9100N MWE6IC9100N MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1 CRCW08054701FKEA ZO 607 MA MWE6IC9100NBR1 A114 A115 AN1977 AN1987 PDF

    Nichicon PL(M)

    Abstract: Chemi-Con 4TPE150MAZB United Chemi-Con series SANYO POSCAP D3 simple switcher 5v 10A Aluminum Electrolytic Capacitor nichicon lead 12V DC to 24V dC converter circuit diagram SI4816BDY fB g19
    Text: LTC3708 Fast 2-Phase, No RSENSE Buck Controller with Output Tracking DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 3708 is a dual, 2-phase synchronous step-down switching regulator with output voltage up/down tracking


    Original     		LTC3708 LTC3708s LTC3729 550kHz, 12-Phase LTC3731 600kHz, LTC3778 3708f Nichicon PL(M) Chemi-Con 4TPE150MAZB United Chemi-Con series SANYO POSCAP D3 simple switcher 5v 10A Aluminum Electrolytic Capacitor nichicon lead 12V DC to 24V dC converter circuit diagram SI4816BDY fB g19 PDF

    J771

    Abstract: gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 MRF5S21045NR1 TLX8-0300 a113 bolt MRF5S21045N
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21045N Rev. 4.1, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5S21045N MRF5S21045NR1 MRF5S21045NBR1 J771 gps 144 1812y224kat AN1955 JESD22-A114 MRF5S21045NBR1 TLX8-0300 a113 bolt MRF5S21045N PDF

    HPA173-001

    Abstract: HPA173 MSS1278-183MLB TPS5430 SLVU157 MSS1278-223MLB HPA173-002 TPS5431
    Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		SLVU157 TPS5430/31EVM-173 TPS5430 TPS5431 HPA173-001 HPA173 MSS1278-183MLB SLVU157 MSS1278-223MLB HPA173-002 PDF

    PTC THERMISTOR TDK

    Abstract: TDK Ferrite Core PC44 PS2801-1-A PTC TDK TDK PC44 ISL6741IBZ NTC thermistor 10k ohm rtd ic 0603 footprint IPC BI-Tech
    Text: ISL6740, ISL6741 Data Sheet July 13, 2007 Flexible Double Ended Voltage and Current Mode PWM Controllers FN9111.4 Features • Precision Duty Cycle and Deadtime Control The ISL6740, ISL6741 family of adjustable frequency, low power, pulse width modulating PWM voltage mode


    Original     		ISL6740, ISL6741 FN9111 ISL6741 ISL6740) ISL6741) PTC THERMISTOR TDK TDK Ferrite Core PC44 PS2801-1-A PTC TDK TDK PC44 ISL6741IBZ NTC thermistor 10k ohm rtd ic 0603 footprint IPC BI-Tech PDF

    C1608JB1H472K

    Abstract: C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C1608JB1H472K C4532JF1C476 C2012JF1H105Z C3225JB0J107M C1608JF1H104Z C0603CH1H010C C0603CH1H0R5C C0603CH1HR75C C4532JF C1005CH1H120J PDF

    C1005X5R1V154K050BC

    Abstract: C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005X5R1V154K050BC C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K PDF

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT PDF

    MRF5S21045N

    Abstract: No abstract text available
    Text: Document Number: MRF5S21045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF5S21045 MRF5S21045NR1/NBR1. MRF5S21045MR1 MRF5S21045MBR1 MRF5S21045MR1 MRF5S21045N PDF

    HPA173-001

    Abstract: C4532X7R1E106KT TPS5431 HPA173-002 TPS5430 MSS1278-183MLB HPA173
    Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		SLVU157 TPS5430/31EVM-173 TPS5430 TPS5431 HPA173-001 C4532X7R1E106KT HPA173-002 MSS1278-183MLB HPA173 PDF

    C4532

    Abstract: C4532CH1H104J CC1812 C4532JB1H225K
    Text: SMD, General Use C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low residual inductance assures superior frequency


    OCR Scan     		15fJF] C4532X5R1C156M C4532X5R1C226M C4532X5R1C336M C4532X5R1A336M C4532X5R1A476M C4532X5R0J686M C4532X5RCU107M C4532 C4532CH1H104J CC1812 C4532JB1H225K PDF