C4532X5R1H475MT Search Results

C4532X5R1H475MT Price and Stock

Filter by Manufacturer


TDK Corporation C4532X5R1H475MT Multilayer Ceramic Capacitor, 4.7 uF, 50 V, ï¿½ 20%, X5R, 1812 [4532 Metric] - Tape and Reel (Alt: C4532X5R1H475MT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	C4532X5R1H475MT	Reel		143 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

C4532X5R1H475MT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: User's Guide SLVU185 – September 2006 TPS5410EVM-203 1-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4	Original	SLVU185 TPS5410EVM-203 TPS5410	PDF
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N	PDF
C4532X5R1H475MT Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427	PDF
ATC600F100JT250XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier	Original	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1	PDF
J5001 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001	PDF
UCD90120 Abstract: MOSFET R166 Text: User's Guide SLVU347 – December 2009 Evaluation Module for UCD90120 and UCD90124 This User’s Guide describes the evaluation modules EVM for the UCD90120 (UCD90120EVM) and UCD90124 (UCD90124EVM). The EVM contains evaluation and reference circuitry for the UCD90120 and	Original	SLVU347 UCD90120 UCD90124 UCD90120 UCD90120EVM) UCD90124EVM) UCD90124. MOSFET R166	PDF
J4-89 Abstract: J534 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N	PDF
B540C-13-F Abstract: HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001 Text: User's Guide SLVU211 – April 2007 TPS5450EVM-254 5-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 1 Test Setup and Results . 3	Original	SLVU211 TPS5450EVM-254 TPS5450 B540C-13-F HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001	PDF
ATC100B0R5BT500XT Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d	Original	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1	PDF
Untitled Abstract: No abstract text available Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3	Original	SLVU157 TPS5430/31EVM-173 TPS5430	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N	PDF
*J532 Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529	PDF
MRF8P20100HR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3	PDF
DEC 55210 Abstract: J5001 ipc 9850 mw6ic2240nb TD-SCDMA A114 A115 AN1977 AN1987 C101 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 DEC 55210 J5001 ipc 9850 mw6ic2240nb TD-SCDMA A114 A115 AN1977 AN1987 C101	PDF
C4532X5R1H475MT Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15 Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3	PDF
J5001 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 4, 12/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001	PDF
MRF8S9260HSR3 Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H Text: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H	PDF
J5001 Abstract: ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1 MW6IC2240N Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 5, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J5001 ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1	PDF

Privacy Settings

C4532X5R1H475MT Search Results

C4532X5R1H475MT Price and Stock

TDK Corporation C4532X5R1H475MT

C4532X5R1H475MT Datasheets Context Search

Untitled

ipc 9850

Untitled

C4532X5R1H475MT

ATC600F100JT250XT

Untitled

J5001

UCD90120

J4-89

Untitled

B540C-13-F

ATC100B0R5BT500XT

Untitled

Untitled

Untitled

*J532

MRF8P20100HR3

DEC 55210

C4532X5R1H475MT

Untitled

Untitled

J5001

MRF8S9260HSR3

J5001