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    TDK Corporation C4532X5R1H475MT

    Multilayer Ceramic Capacitor, 4.7 uF, 50 V, � 20%, X5R, 1812 [4532 Metric] - Tape and Reel (Alt: C4532X5R1H475MT)
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    Avnet Abacus C4532X5R1H475MT Reel 143 Weeks 1,000
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    C4532X5R1H475MT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU185 – September 2006 TPS5410EVM-203 1-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 4


    Original     		PDF SLVU185 TPS5410EVM-203 TPS5410

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 2, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427

    ATC600F100JT250XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 --63ubsidiaries, MRF6S18100NR1

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    UCD90120

    Abstract: MOSFET R166
    Text: User's Guide SLVU347 – December 2009 Evaluation Module for UCD90120 and UCD90124 This User’s Guide describes the evaluation modules EVM for the UCD90120 (UCD90120EVM) and UCD90124 (UCD90124EVM). The EVM contains evaluation and reference circuitry for the UCD90120 and


    Original     		PDF SLVU347 UCD90120 UCD90124 UCD90120 UCD90120EVM) UCD90124EVM) UCD90124. MOSFET R166

    J4-89

    Abstract: J534
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 0, 9/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J4-89 J534

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N

    B540C-13-F

    Abstract: HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001
    Text: User's Guide SLVU211 – April 2007 TPS5450EVM-254 5-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 1 Test Setup and Results . 3


    Original     		PDF SLVU211 TPS5450EVM-254 TPS5450 B540C-13-F HPA254 10TPB330M C1608X7R1H103K TPS5450 Keystone 5001

    ATC100B0R5BT500XT

    Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100NR1 ATC100B0R5BT500XT MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 A113 A114 A115 AN1955

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU157 – March 2006 TPS5430/31EVM-173 3-A, Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		PDF SLVU157 TPS5430/31EVM-173 TPS5430

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N

    *J532

    Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529

    MRF8P20100HR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from


    Original     		PDF MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3

    DEC 55210

    Abstract: J5001 ipc 9850 mw6ic2240nb TD-SCDMA A114 A115 AN1977 AN1987 C101
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 DEC 55210 J5001 ipc 9850 mw6ic2240nb TD-SCDMA A114 A115 AN1977 AN1987 C101

    C4532X5R1H475MT

    Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		PDF MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 4, 12/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    MRF8S9260HSR3

    Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H
    Text: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H

    J5001

    Abstract: ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1 MW6IC2240N
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 5, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J5001 ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1