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    C5750X7S2A Price and Stock

    TDK Corporation C5750X7S2A106K230KE

    CAP CER 10UF 100V X7S 2220
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    DigiKey C5750X7S2A106K230KE Digi-Reel 75,139 1
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    TDK Corporation C5750X7S2A106M230KE

    CAP CER 10UF 100V X7S 2220
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    TDK Corporation C5750X7S2A685K200KB

    CAP CER 6.8UF 100V X7S 2220
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    DigiKey C5750X7S2A685K200KB Cut Tape 35,821 1
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    TDK Corporation C5750X7S2A106M230KB

    CAP CER 10UF 100V X7S 2220
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    DigiKey C5750X7S2A106M230KB Cut Tape 9,097 1
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    Mouser Electronics C5750X7S2A106M230KB 48,936
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    Component Electronics, Inc C5750X7S2A106M230KB 10
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    TDK Corporation C5750X7S2A106K230KB

    CAP CER 10UF 100V X7S 2220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C5750X7S2A106K230KB Reel 7,853 500
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    C5750X7S2A106K230KB Digi-Reel 7,853 1
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    C5750X7S2A106K230KB Ammo Pack 16 Weeks, 3 Days 1
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    C5750X7S2A106K230KB Cut Strips 253 16 Weeks 1
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    Quest Components C5750X7S2A106K230KB 4,400
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    Find more C5750X7S2A price and stock on Findchips.com

    C5750X7S2A Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C5750X7S2A106K230KB TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 100V 10% X7S 5750 Original PDF
    C5750X7S2A106K230KE TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 100V 10% X7S 5750 Original PDF
    C5750X7S2A106M230KB TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 100V 20% X7S 5750 Original PDF
    C5750X7S2A106M230KE TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 100V 20% X7S 5750 Original PDF
    C5750X7S2A156M250KB TDK Ceramic Capacitors, Capacitors, CAP CER 15UF 100V 20% X7S 5750 Original PDF
    C5750X7S2A226M280KB TDK COMMERCIAL GRADE MID-VOLTAGE,222 Original PDF
    C5750X7S2A685K200KB TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 100V 10% X7S 5750 Original PDF
    C5750X7S2A685M200KB TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 100V 20% X7S 5750 Original PDF

    C5750X7S2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: C5750X7S2A685K200KB TDK Item Description : C5750X7S2A685KT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C5750 [EIA CC2220] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100 120


    Original     		PDF C5750X7S2A685K200KB C5750X7S2A685KT* C5750 CC2220] AEC-Q200 73Mohm 100Vdc) 100kHz 500kHz

    Untitled

    Abstract: No abstract text available
    Text: C5750X7S2A106K230KB TDK Item Description : C5750X7S2A106KT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C5750 [EIA CC2220] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100 120


    Original     		PDF C5750X7S2A106K230KB C5750X7S2A106KT* C5750 CC2220] AEC-Q200 50Mohm 100Vdc) 100kHz 500kHz

    Untitled

    Abstract: No abstract text available
    Text: C5750X7S2A156M250KB TDK Item Description : C5750X7S2A156MT* DC Bias Characteristic 20 Application & Main Feature 10 Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C5750 [EIA CC2220] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100


    Original     		PDF C5750X7S2A156M250KB C5750X7S2A156MT* C5750 CC2220] AEC-Q200 33Mohm 100Vdc) 100kHz 500kHz

    C3216C0

    Abstract: C3225X7S2A475K C1005 C1608 C2012 C3216 C3225 C4532 C3216C0G2J CC0805
    Text: C Series Mid Voltage Application Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C3216C0 C3225X7S2A475K C1005 C1608 C2012 C3216 C3225 C4532 C3216C0G2J CC0805

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		PDF MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		PDF AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    C5750X7S2A106MT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18210WHSR3 MRF8S18210WGHSR3 Designed for CDMA base station applications with frequencies from1805 MHz


    Original     		PDF MRF8S18210WHS MRF8S18210WHSR3 MRF8S18210WGHSR3 from1805 MRF8S18210WHSR3 C5750X7S2A106MT

    C3216X7R2J472M115AA

    Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C3216X7R2J472M115AA C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb

    transistor j241

    Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
    Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		PDF A2T26H160--24S A2T26H160-24SR3

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 004-01 / 20131003 / mlcc_commercial_midvoltage_en


    Original     		PDF C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210]

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series, CKC Series Commercial Grade Soft Termination Type: Issue date: Aug 2013 C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] CKCN27 [EIA CC0302]


    Original     		PDF C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808] C4532 CC1812]

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    MOSFET J162

    Abstract: CW12010T0050G
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		PDF AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		PDF MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Soft Termination Type: C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4520 [EIA CC1808] C4532 [EIA CC1812] C5750 [EIA CC2220] C7563 [EIA CC3025] Issue date: Mar 2014


    Original     		PDF C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C4520 CC1808]

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H160--4S4 AFT26H160-4S4R3

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor

    C3225X7R2A225

    Abstract: CC2220 X7T voltage MLCC CRACK C5750X7S2a c5750x7t2 CC1210 106 capacitor 450v 10MF C3225X7s tdk capacitors c5750
    Text: C Series Soft Termination Type Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS


    Original     		PDF C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] C3225X7R2A225 CC2220 X7T voltage MLCC CRACK C5750X7S2a c5750x7t2 CC1210 106 capacitor 450v 10MF C3225X7s tdk capacitors c5750

    3216 B 10uF

    Abstract: 2012X7R CC0805 100V 2.2nF C5750X7S2A106M 125AE
    Text: Multilayer Ceramic Chip Capacitors For automobile Resin terminations C series Type: C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		PDF C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] 3216 B 10uF 2012X7R CC0805 100V 2.2nF C5750X7S2A106M 125AE