C 34 F
Abstract: 1SV274 D234
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package
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1SV274
C25V/C28V
470MHz
C 34 F
1SV274
D234
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT N A N D GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance
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TC4S11F
TC4S11F
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l20pF
Abstract: No abstract text available
Text: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.
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3SK249
l20pF
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DIL-16
Abstract: UC5613
Text: y v i UNITRODE UC5613 9-Line Low Capacitance SCSI Active Terminator FEATURES Complies with SCSI, SCSI-2 and SPI-2 Standards 3pF Channel Capacitance during Disconnect 100|iA Supply Current in Disconnect Mode Meets SCSI Hot Plugging Capability -400m A Sourcing Current for
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-400m
400mA
UC5613
UC5613
100mAto
-100mA
UDG-94008-1
DIL-16
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2SC4202
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC4202 V I DEO O U TPUT FOR SUPER HIGH RESOLUTION DISPLAY. Unit in mm HIGH S P E E D S WIT CHING APPLICATIONS. 10.3M A X ., ^ 3 - 6 ± 0 . 2 . H i g h T r ansition Freq u e n c y : f x = l .l G H z T y p . . L o w Collector Output Capacitance.
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2SC4202
2SC4202
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2SA1145
Abstract: No abstract text available
Text: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)
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2SA1145
2SC2705.
200MHz
O-92MOD
--10mA
--10mA,
--10mA
2SA1145
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.
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1SV230
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Untitled
Abstract: No abstract text available
Text: 3SK226 SILICON N CH ANNEL DUAL GATE M O S T Y P E FIELD EF F E C T T R A N SIST O R TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. U nit in mm +Q2 2.9 - 0.3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.
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3SK226
015pF
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1SV261
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV261 UHF SHF TUNING • H igh C apacitance R atio : C 2 V /C 2 5 V = 5.7 Typ. • Low Series R esistance : r s = 1.20 (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror.
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1SV261
470MHz
1SV261
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TIS152
Abstract: No abstract text available
Text: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x
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TLS1521
D3625,
990-R
40/Ivv)
TIS152
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Untitled
Abstract: No abstract text available
Text: y UNITRODE UC5604 9-Line Low Capacitance SCSI Active Terminator FEATURES DESCRIPTION • The UC5604 provides 9 lines of active termination for a SCSI Small Com puter Systems Interface parallel bus. The SCSI standard recommends ac tive termination at both ends of the cable segment.
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-300mA
UC5604
UC5604
100mA
-100mA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV282
0014g
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SV277
Abstract: No abstract text available
Text: 1SV277 TO SHIBA 1 SV277 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.3 Typ. Low Series Resistance : rs = 0.42H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV277
SV277
SV277
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3. [3 ] Product Outline of The TC74VH C/VH CT Series Product Outline of The TC74VHC/VHCT Series 3-1 Features 1 High Speed Operation / Low Voltage Operation TC74VHC series at 5V operation is faster than TC74AC series at light load capacitance. The TC74VHC series utilizes 1.0//m silicon gate CMOS technology and the "quick and
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TC74VH
TC74VHC/VHCT
TC74VHC
TC74AC
TC74HC
TC74VHC/
16/20pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure
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3SK291
016pF
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SS302
Abstract: No abstract text available
Text: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)
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1SS302
SS302
SC-70
SS302
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV245 UHF SHF T U N IN G • • • High Capacitance Ratio : C2V / C25V = 5.7 Typ. Low Series Resistance : rs= 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. M A X IM U M RATIN G S (Ta = 25°C)
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1SV245
C2V/C25V
10kS2)
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV276
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marking t6 VARIABLE CAPACITANCE DIODE
Abstract: 1SV211
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV211 CATV TUNING. • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Excellent C - V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)
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1SV211
C2V/C25V
marking t6 VARIABLE CAPACITANCE DIODE
1SV211
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mpsa92
Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Text: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance
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MPSA92,
-300V
MPSA92)
MPSA93)
MPSA43
MPSA92
MPSA93
MPS-A92
SA42
transistor MPSA92
MPS-A93
mpsa92 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance
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HN2D02FU
HN2D02FU
961001EAA2'
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1sv257
Abstract: No abstract text available
Text: TOSHIBA 1SV257 Variable Capacitance Diode U nit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • Ultra Low Series Resistance : rs = 0.2Q Typ. • Useful for Small Size Set A bso lu te M axim um R atings (Ta = 25 C) CHARACTERISTIC R everse V o lta g e
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1SV257
fs470M
1sv257
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1SV304
Abstract: No abstract text available
Text: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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1SV304
1SV304
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1SV186
Abstract: 1SV186 toshiba
Text: TO SHIBA 1SV186 Unit in mm Variable Capacitance Diode 1 . 5 - ili 5 Silicon Epitaxial Planar Type UHF SHF Tuning Features • High Capacitance Ratio : C 2V/C25V = 5.2 Typ. • Low Series Resistance : rs = 1 ,2Q (Typ.) • Excellent C-V Characteristics, and Small Tracking Error
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1SV186
V/C25V
1SV186
1SV186 toshiba
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