JANTX1N5719
Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Text: REVISIONS LTR DESCRIPTION DATE Page 3, paragraph 3.5 marking. Page 9, added vendor part number reference to paragraph 6.5. Update lead finish, manufacturer information, editorial and format changes. A B APPROVED 8 April 2002 Thomas M. Hess 18 August 2008 Thomas M. Hess
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MIL-PRF-19500/443
037Z3
JANTX1N5719
01038-1N5719TX
C68001
1N5719 equivalent
MA1N5719HX
1N4456
96341
HP JANTX1N5719
MA1N5719
C-68001
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PDF
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ASTM-D3487
Abstract: 1N5597 1N5600 D1868 250-28UNF-2B 037Z3 1N5603 375-24UNF-2A
Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-PRF-19500/404 has been cancelled. This drawing may be used as a substitute. Selected item drawing Prepared in accordance with ASME Y14.100 REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 3 4 PREPARED BY
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MIL-PRF-19500/404
037Z3
1N5597,
1N5600,
1N5603,
ASTM-D3487
1N5597
1N5600
D1868
250-28UNF-2B
037Z3
1N5603
375-24UNF-2A
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PDF
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04029-01TX
Abstract: QML-19500 2N5927 NPN power switching transistor 32953 power tech 32953 ASME-14
Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/440 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A Original date of drawing
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MIL-S-19500/440
ASME-14
2N5927
037Z3
04029-01TX
04029-01TXV
04029-01TX
QML-19500
2N5927
NPN power switching transistor 32953
power tech 32953
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PDF
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90024-03TX
Abstract: pic646
Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 7 August 2000 Monica Poelking B Supplier/address/CAGE change; reformat document 23 May 2002 Thomas M. Hess C Correct figure 1 - header thickness, supplier name, editorial changes throughout - RK
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037Z3
ASME-14
12certificate
90024-01TX,
90024-02TX,
90024-03TX,
90024-04TX,
90024-05TX,
90024-06TX,
PIC645
90024-03TX
pic646
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PDF
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power tech 32953
Abstract: 2N5926 ASME-14 2N5926 JAN 2N5926 JANTX certificate of compliance jantx
Text: REVISIONS LTR DESCRIPTION DATE APPROVED MIL-S-19500/447 has been cancelled. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100 Selected item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV PAGES PMIC N/A 1 2 4 PREPARED BY Roger Kissel
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MIL-S-19500/447
ASME-14
037Z3
2N5926
5961-Eed
04030-01TX
04030-01TXV
power tech 32953
2N5926
2N5926 JAN
2N5926 JANTX
certificate of compliance jantx
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PDF
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Untitled
Abstract: No abstract text available
Text: SUPPLIER REQUIREMENTS FOR QUALITY, DESIGN & MANUFACTURING 1.0 PURPOSE The purpose of this document is to define the requirements of Anaren Microwave, Anaren Ceramics and MS Kennedy collectively Anaren regarding the quality as well as the design and manufacture of purchased material. This requirement is not meant to discourage suppliers from
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Untitled
Abstract: No abstract text available
Text: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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FSTYC9055D,
FSTYC9055R
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PDF
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1E14
Abstract: 2E12 FSF9250D FSF9250R
Text: S E M I C O N D U C T O R FSF9250D, FSF9250R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 15A, -200V, rDS ON = 0.290Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSF9250D,
FSF9250R
-200V,
36MeV/mg/cm2
O-254AA
1E14
2E12
FSF9250D
FSF9250R
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PDF
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Untitled
Abstract: No abstract text available
Text: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL230R
FSGL230R
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PDF
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2E12
Abstract: FSGL033D1 FSGL033R3 FSGL033R4 Rad Hard in Fairchild for MOSFET
Text: FSGL033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGL033R
FSGL033R
2E12
FSGL033D1
FSGL033R3
FSGL033R4
Rad Hard in Fairchild for MOSFET
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PDF
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2E12
Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSYC9160D,
FSYC9160R
-100V,
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
Rad hard MOSFETS in Harris
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PDF
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Untitled
Abstract: No abstract text available
Text: FSGYE230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE230R
FSGYE230R
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PDF
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Untitled
Abstract: No abstract text available
Text: FSGYE033R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYE033R
FSGYE033R
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PDF
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Untitled
Abstract: No abstract text available
Text: FSGYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both
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FSGYC260R
FSGYC260R
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2N6138
Abstract: 2N6116 JANTX2N6118 JANTX2N6137 JANTX2N6117 JANTX2N6116 037z3-01039 2N6118 JAN2N6116 2N6117
Text: REVISIONS LTR DESCRIPTION DATE Update lead finish paragraph to clarify prohibition of pure tin, update format A APPROVED 16 August 2007 Thomas M. Hess Devices on this drawing may be used as a substitute for MIL-S-19500/493 which has been inactivated for new design.
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MIL-S-19500/493
ASME-14
2N6116
2N6116TX
2N6116TXV
2N6117
2N6117TX
2N6117TXV
2N6118
2N6118TX
2N6138
2N6116
JANTX2N6118
JANTX2N6137
JANTX2N6117
JANTX2N6116
037z3-01039
2N6118
JAN2N6116
2N6117
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PDF
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2E12
Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Text: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9130D,
FSL9130R
-100V,
2E12
FSL9130D
FSL9130D1
FSL9130D3
FSL9130R
FSL9130R1
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PDF
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2E12
Abstract: FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3
Text: FSL130D, FSL130R 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL130D,
FSL130R
2E12
FSL130D
FSL130D1
FSL130D3
FSL130R
FSL130R1
FSL130R3
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PDF
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140£1 TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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OCR Scan
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FSF9150D,
FSF9150R
-100V,
O-254AA
36MeV/mg/cm2
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL430D,
FSL430R
36MeV/mg/cm2
O-205AF
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL234D,
FSL234R
36MeV/mg/cm2
100Kolder)
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSF9250D, FSF9250R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 15A, -200V, rDS ON = 0.290Q TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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OCR Scan
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FSF9250D,
FSF9250R
-200V,
O-254AA
36MeV/mg/cm2
|
PDF
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSYC260D,
FSYC260R
|
PDF
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Untitled
Abstract: No abstract text available
Text: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSYA250D,
FSYA250R
FSYA250R
|
PDF
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Untitled
Abstract: No abstract text available
Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSS230D,
FSS230R
O-257AA
MIL-S-19500
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PDF
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