CLASS AB MOSFET RF AMPLIFIER Search Results

CLASS AB MOSFET RF AMPLIFIER Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

CLASS AB MOSFET RF AMPLIFIER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5r1 mosfet transistor Abstract: mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–5/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB common source, linear power	Original	MRF6522 MRF6522-5R1 5r1 mosfet transistor mosfet j142 J132 MOSFET 741 datasheet motorola mosfet J137 MOSFET J132 transistor zo 607 ZO 607 MA MRF6522-5R1 SMD transistor 23	PDF
25c2625 Abstract: MHW1910 MHW1910-1 mos 4801 Text: MOTOROLA Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ	Original	MHW1910/D MHW1910-1 301AW MHW1910 25c2625 MHW1910-1 mos 4801	PDF
27271SL Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310	PDF
transistor z4 n Abstract: NPN transistor mhz s-parameter mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 MRF282	PDF
RE65G1R00 Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282	PDF
Arlon Abstract: MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1* MRF282ZR1* RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1* MRF282ZR1* DEVICEMRF282/D Arlon MRF282	PDF
300 uF 450 VDC Mallory Capacitor Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282S MRF282Z MRF282S 300 uF 450 VDC Mallory Capacitor 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282Z MRF282	PDF
MRF282 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 DEVICEMRF282/D MRF282	PDF
j718 Abstract: VK200/10-3B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	OCR Scan	MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B	PDF
mosfet amplifier class ab rf Abstract: QPP-001 "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB Text: QuikPAC Data QPP-001 30 W, 869-894 MHz Class AB Amplifier General description: Features: The QPP-001 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with	Original	QPP-001 QPP-001 180max mosfet amplifier class ab rf "RF MOSFET CLASS AB mosfet rf class ab RF MOSFET CLASS AB	PDF
"RF MOSFET CLASS AB Abstract: RF MOSFET CLASS AB Text: QuikPAC Data QPP-002 30 W, 925-960 MHz Class AB Amplifier General description: Features: The QPP-002 QuikPAC 30W power module is a solid state class AB amplifier designed to serve as the driver or output stage in a cellular base station linear power amplifier.This unit incorporates state-ofthe-art MOSFET RF devices configured for use with	Original	QPP-002 QPP-002 180max "RF MOSFET CLASS AB RF MOSFET CLASS AB	PDF
25C2625 Abstract: MHW1810 MHW1810-1 MHW1810-2 mos 4801 Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF MOSFET Line RF Power Field Effect Amplifiers N–Channel Enhancement–Mode Lateral MOSFETs • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics	Original	MHW1810/D MHW1810-1 MHW1810-2 MHW1810 301AW 25C2625 MHW1810-1 MHW1810-2 mos 4801	PDF
905-170 Abstract: MRF3010 VK200 VK20019-4B Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B	PDF

imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL	PDF
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282	PDF
GX-0300 Arlon Abstract: MJD320 ATC 116 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	OCR Scan	MRF282S MRF282Z GX-0300 Arlon MJD320 ATC 116	PDF
microstrip Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier	Original	MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS	PDF
MRF19030 Abstract: 400S MRF19030R3 MRF19030SR3 Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030R3 MRF19030SR3 MRF19030R3 MRF19030 400S MRF19030SR3	PDF
MRF19090 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090R3 MRF19090SR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with	Original	MRF19090/D MRF19090R3 MRF19090SR3 MRF19090/D MRF19090	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1014N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1014NT1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and	Original	MMRF1014N MMRF1014NT1	PDF
MRF19030 Abstract: 400S MRF19030R3 MRF19030SR3 Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030R3 MRF19030SR3 MRF19030R3 MRF19030 400S MRF19030SR3	PDF
MRF19030 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030R3 RF Power Field Effect Transistors MRF19030LR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF19030SR3 Designed for class AB PCN and PCS base station applications with	Original	MRF19030/D MRF19030R3 MRF19030LR3 MRF19030SR3 MRF19030LSR3 MRF19030LSR3 MRF19030/D MRF19030	PDF
MRF19090 Abstract: 56-590-65/3B 465B MRF19090S MRF19090SR3 Lambda HK Text: MOTOROLA Order this document by MRF19090/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S MRF19090SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with	Original	MRF19090/D MRF19090 MRF19090S MRF19090SR3 MRF19090 MRF19090S 56-590-65/3B 465B MRF19090SR3 Lambda HK	PDF

CLASS AB MOSFET RF AMPLIFIER Search Results

CLASS AB MOSFET RF AMPLIFIER Result Highlights (5)

CLASS AB MOSFET RF AMPLIFIER Datasheets Context Search

5r1 mosfet transistor

25c2625

27271SL

transistor z4 n

MRF282

RE65G1R00

Arlon

300 uF 450 VDC Mallory Capacitor

MRF282

j718

mosfet amplifier class ab rf

"RF MOSFET CLASS AB

25C2625

905-170

imd 5210

100B270JCA500X

GX-0300 Arlon

microstrip

MRF19030

MRF19090

Untitled

MRF19030

MRF19030

MRF19090