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    CLASS B POWER TRANSISTORS CURRENT GAIN Search Results

    CLASS B POWER TRANSISTORS CURRENT GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    CLASS B POWER TRANSISTORS CURRENT GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3632

    Abstract: 2N3375 2N3373
    Text: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN


    Original     		PDF 2N3375 2N3632/2N3733 400MHz 5TO13 2N3373 2N3632 2N3733 -200mA Vca-30V 250mA 2N3632 2N3375 2N3373

    TH430

    Abstract: SD1728 M177
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    Arco 426

    Abstract: No abstract text available
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 Arco 426

    c1969 transistor

    Abstract: C1969 transistor C1969 ssm2164 SSM2024 SSM2164P SSM2164S DAC8426 equivalent compandor op275
    Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders


    Original     		PDF SSM2164 SSM2164 16-Pin R-16A) C1969 c1969 transistor transistor C1969 SSM2024 SSM2164P SSM2164S DAC8426 equivalent compandor op275

    mmic

    Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
    Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)


    Original     		PDF LN-162315-H4 LN-141510-H4 LN-141526-H4 mmic mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4

    ssm2164

    Abstract: SSM2024 C1969
    Text: BACK a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders


    Original     		PDF SSM2164 SSM2164 16-Pin R-16A) C1969 SSM2024

    SSM2164

    Abstract: SSM2024 C1969 N-16 OP176 OP275 OP482 SSM2164P SSM2164S C601K
    Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders


    Original     		PDF SSM2164 SSM2164 16-Pin R-16A) C1969 SSM2024 N-16 OP176 OP275 OP482 SSM2164P SSM2164S C601K

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders


    Original     		PDF SSM2164 SSM2164 16-Pin R-16A) C1969â

    2sd1070

    Abstract: No abstract text available
    Text: SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF SD1070 oscil12-20 MSC1642 2sd1070

    Granberg

    Abstract: No abstract text available
    Text: SOLID STATE AMPLIER DESIGN USING RF MOSFET DEVICES by S.K. Leong polyfet rf devices MTT 1999 June 17th Anaheim Selection of Proper Device • Output Power / Gain / Bandwidth / Efficiency / Linearity / COST • Package type – Single Ended / Push Pull – Surface mount or screw in metal flange


    Original     		PDF 250Watt Granberg

    IN4007 diode

    Abstract: IN4007 RECTIFIER DIODE thyristor firing circuit IN4007 bridge rectifier ic dual thyristor Multivibrator scr pulse battery charger schematic preamp with bass treble circuit diagrams DIODE IN4007 thyristor battery charger 24v thyristor firing circuits
    Text: Harris Semiconductor No. AN6048.1 Harris Intelligent Power April 1994 SOME APPLICATIONS OF A PROGRAMMABLE POWER SWITCH/AMPLIFIER Authors: L.R. Campbell and H.A. Wittlinger Circuit Description The CA3094 unique monolithic programmable power switch/ amplifier IC consists of a high-gain preamplifier driving a


    Original     		PDF AN6048 CA3094 CA3094, CA3080 CA3080A, CA3080A AN6668. AN6077. IN4007 diode IN4007 RECTIFIER DIODE thyristor firing circuit IN4007 bridge rectifier ic dual thyristor Multivibrator scr pulse battery charger schematic preamp with bass treble circuit diagrams DIODE IN4007 thyristor battery charger 24v thyristor firing circuits

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    ssm2164

    Abstract: sm2024 OP482 equivalent
    Text: ANALOG DEVICES FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation Low Cost Quad Voltage Controlled Amplifier SSM2164 FUNCTIONAL BLOCK DIAGRAM


    OCR Scan     		PDF SSM2164 SSM2164 SSM2024 SSM21B4 16-Pin R-16A) sm2024 OP482 equivalent

    2164 20 pin

    Abstract: v 2164 m
    Text: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM


    OCR Scan     		PDF SSM2164 16-Pin R-16A) 2164 20 pin v 2164 m

    AD161/AD162

    Abstract: AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127 OC201
    Text: 'TaiïuX 51 Electronic Valves Z & I Aero Services Ltd London England 1972-73 Tra n sisto rs Continued Notes Type Constr O utline P,ot fa Vcbo hfm at i c Notes Price £ O C200 S/PNP R08 200mW 7 00 kcl2 -2 5 1 5 -6 0 1mA Low Gain G.P. 0.30 OC201 S/PNP R08 200mW


    OCR Scan     		PDF 200mW 700kcl2) OC201 0mc12' OC202 2mc12' 300mA ACY18 AD161/AD162 AD162 AD161 GP 015 DIODE AD149 AC176 AC126 AC187 AC127

    c 3927

    Abstract: 2N3927 3927 2n3926 v8g0 mobile fm ic
    Text: H • '» r» m / U f U S S 140 C o m m e rce D rive 6 l l f f Montgomeryville, PA 18936- ".h S iT e a V ^ ïô " N 3 9 2 6 /2 N 3 9 2 7 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS FREQUENCY VOLTAGE POWER OUT POW FR GAIN EFFICIENCY CLASS C TRANSISTORS


    OCR Scan     		PDF 230MHz 2N392S 175MHz 2N3S27 175MHz SDf062 2N3927 3926/2N c 3927 2N3927 3927 2n3926 v8g0 mobile fm ic

    2SB1362

    Abstract: 2SD2052
    Text: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • Very good linearity of DC current gain Fife • Wide area of safety operation (ASO) • High transition frequency (fr)


    OCR Scan     		PDF 2SB1362 2SD2052 13SflSE 2SB1362 2SD2052

    2SD1990

    Abstract: IC003
    Text: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5


    OCR Scan     		PDF 2SD1990 O-220 bT32052 2SD1990 IC003

    2SD1262

    Abstract: panasonic 2SD
    Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A • Package Dimensions Unit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7 max. 8.7 max. Medium Speed Power Switching Complementary Pair with 2S D 1262, 2SD 1262A I*- * l.lmax. 6.5max. ■ Features • High DC cu rre n t gain hFE


    OCR Scan     		PDF 2SB939, 2SB939A 2SB939 2SB939A 2SD1262 panasonic 2SD

    2SD1990

    Abstract: No abstract text available
    Text: Power Transistors 2SD1990 2SD1990 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Switching • Features • H igh sp e e d sw itch in g • G ood lin earity of DC c u r r e n t gain Iìf e • L a rg e c o lle c to r p o w e r d issip atio n (P c)


    OCR Scan     		PDF 2SD1990 2SD1990

    2N5590

    Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
    Text: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY


    OCR Scan     		PDF 2N5589 2N5590/2N5591 230MHz 175MHz SD1212-02 SD1214-12 2N5590 SD1216 2N5591 2N5590 2n5591 2N559 2N5589 transistor 2N5589 SD1214 2n558 2N556 M135

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
    Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching


    OCR Scan     		PDF 2SB939, 2SB939A 2SD1262, 2SD1262A 2SB939 2SB939A 2SD1262 2SD1262A high current Darlington pair IC

    2SB1254

    Abstract: 2SD1894 RB1000
    Text: Power Transistors 2SD1894 2S D 1894 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1254 U n it .'m m 5 2max. ^3.2 . 15.5m ax. . • Features 6.9mm. *1 • Optimum for 60 W hi-fi output • High DC cu rre n t gain


    OCR Scan     		PDF 2SD1894 2SB1254 bT326SE 32flS2 2SB1254 2SD1894 RB1000