Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CMOS FAMILY Search Results

    CMOS FAMILY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MC68020CEH25E-G Rochester Electronics LLC Microprocessor, 32-Bit, MC68000 Family Visit Rochester Electronics LLC Buy
    MC68020ERC25/B Rochester Electronics LLC Microprocessor, 32-Bit, MC68000 Family Visit Rochester Electronics LLC Buy
    EP1800GM-75/B Rochester Electronics LLC EP1800 - Classic Family EPLD Visit Rochester Electronics LLC Buy

    CMOS FAMILY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 10f

    Abstract: CMOS-N5 uPD65881 UPD65883 nec 44 pin LQFP nec 44-pin QFP upd65882 UPD65884 MM 5649
    Text: 0.5µm CMOS Gate Array CMOS-N5 Family New s t c u d o r P Features The CMOS-N5 family is a channel-less type gate array that provides high speed operation with a 5-V power supply voltage. Drastic cost reductions have been achieved compared with the conventional CMOS-6 and CMOS-8 families thanks to


    Original     		PDF 16Filzi, A13629EJ4V0PF00 nec 10f CMOS-N5 uPD65881 UPD65883 nec 44 pin LQFP nec 44-pin QFP upd65882 UPD65884 MM 5649

    nec 10f

    Abstract: uPD65881 IC Ensemble mentor robot MM 5649 A1362 CMOS-N5 NEC lqfp 52
    Text: 0.5µm CMOS Gate Array CMOS-N5 Family New s t c u Prod Features The CMOS-N5 family is a channel-less type gate array that provides high speed operation with a 5-V power supply voltage. Drastic cost reductions have been achieved compared with the conventional CMOS-6 and CMOS-8 families thanks to


    Original     		PDF A13629EJ5V2PF00 nec 10f uPD65881 IC Ensemble mentor robot MM 5649 A1362 CMOS-N5 NEC lqfp 52

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		PDF 50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe

    F611

    Abstract: No abstract text available
    Text: NEC Electronics Inc. CMOS-8LHD 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary Description April 1996 Figure 1. CMOS-8LHD Package Options: BGA & QFP NEC's CMOS-8LHD gate-array family combines cellbased-level densities with the fast time-to-market and low


    Original     		PDF 35-micron) A10616EU1V0DS00 F611

    uPD65801

    Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
    Text: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device


    Original     		PDF PD65800 uPD65801 UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813

    AO4L

    Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
    Text: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells


    Original     		PDF MTC-35000 102ps 216ps AO4L ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		PDF 50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d

    Untitled

    Abstract: No abstract text available
    Text: abêê . * * - * * » static CMOS _ Family ol ROMs March 1992 Table 2 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63312 S63302 S63414 S63434 Process CMOS CMOS CMOS CMOS CMOS Capacity 2 Meg


    OCR Scan     		PDF S63312 S63302 S63414 S63434 S63444

    S634000

    Abstract: S63512 S63256
    Text: Static CMOS Family ol ROMs AIM!•Semiconductors March 1992 Table 1 continued : AMI LOW DENSITY FAMILY OF ROMS S63256 S63512 S631000/S631001 S632000 S634000 Process CMOS CMOS CMOS CMOS CMOS Capacity 256K/128K 512K 1 Meg 2 Meg 4 Meg Organization 32Kx8 64Kx8


    OCR Scan     		PDF S63256 256K/128K 32Kx8 S63512 64Kx8 S631000/S631001 S632000 S634000 512Kx8 0014GS4 S634000 S63512 S63256

    Untitled

    Abstract: No abstract text available
    Text: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM


    OCR Scan     		PDF S6316 S6333/S63332 S63364 S6364 S63128 16Kx8

    S63256

    Abstract: No abstract text available
    Text: Static CMOS A i w i i s ^ ^ _ Family ol ROMs March 1992 V AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Table 4:. S632000L S631000/001L S63512L S63256L S63128L Process CMOS CMOS CMOS CMOS CMOS Capacity 2 MEG 1 MEG


    OCR Scan     		PDF S632000L S631000/001L 128KX8 S63512L 64Kx8 S63256L S63128L S63256

    Untitled

    Abstract: No abstract text available
    Text: Static CMOS Family o! ROMs •Semiconductors March 1992 Table 3: AMI HIGH DENSITY FAMILY OFROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63314 S63334 S63344 S63408 S63418 Process CMOS CMOS CMOS CMOS CMOS Capacity 4 Meg 4 Meg 4 Meg 8 Meg 8 Meg 512K X8


    OCR Scan     		PDF S63314 S63334 512KX8 S63344 S63408 S63418 512KX16

    2732 cmos eprom

    Abstract: No abstract text available
    Text: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8


    OCR Scan     		PDF S6364L S63364L S6333L/32 S6316L 250n8, 2732 cmos eprom

    Untitled

    Abstract: No abstract text available
    Text: static CMOS A M i .s^ ^ _ Family of ROMs March 1992 Table 3 continued : AMI HIGH DENSITY FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C S63308 S63318 S634017 CMOS CMOS CMOS CMOS Capacity 8 Meg 8 Meg 16 Meg 16 Meg Organization 1Mx8


    OCR Scan     		PDF S63308 S63318 S634017 S634116

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP D23bSfl 7TL4142 0G23bSc

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8


    OCR Scan     		PDF KM681000B 128Kx8

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L

    KM62256CLP-7

    Abstract: No abstract text available
    Text: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family


    OCR Scan     		PDF KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL- KM62256C KM62256CLP-7

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.


    OCR Scan     		PDF KM681000C 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000C KM681000CLT-5L 32-TSOP KM661000CLRI-7L

    nec d 588

    Abstract: nec naming rule nec product naming rule NEC CMOS-4
    Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required


    OCR Scan     		PDF 35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4

    KM68V4000AL-L

    Abstract: KM68U4000A lm68
    Text: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family


    OCR Scan     		PDF KM68V4000A, KM68U4000A 512Kx8 KM68V400QA 32-SOP-52S, 32-TSOP2-4 KM68V4000AL KM68V4000AL-L lm68

    Untitled

    Abstract: No abstract text available
    Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V


    OCR Scan     		PDF KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000AL KM68V4000AL-L

    A2ND

    Abstract: KM68U512ALE-L KM68V512A
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process


    OCR Scan     		PDF KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP A2ND KM68U512ALE-L

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%


    OCR Scan     		PDF KM68512A 64Kx8 32-SOP, 32-TSOP DG23b27