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    COMMON BASE AMPLIFIER Search Results

    COMMON BASE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    COMMON BASE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2470

    Abstract: 55AP transistor Common Base amplifier
    Text: R.A.P.992605-BEHRE 2425-25 25 WATT, 24V, Class C Microwave 2410-2470 MHz GENERAL DESCRIPTION CASE OUTLINE 55AP Common Base Narrow Lead The 2425-25 is a common base bipolar transistor capable of providing 25 Watts of Class C RF output power over the band of 2410-2470 MHz. This transistor is


    Original     		PDF 992605-BEHRE 2470 55AP transistor Common Base amplifier

    MMBTH24

    Abstract: MPSH11 MPSH24
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MMBTH24 MPSH24

    MPSH24

    Abstract: MMBTH24 MPSH11
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MPSH24 MMBTH24

    MPSH34

    Abstract: MPSH11
    Text: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET


    Original     		PDF MPSH34 100mA 300MHz, MPSH11 MPSH34

    MMBTH10RG

    Abstract: No abstract text available
    Text: MMBTH10RG MMBTH10RG NPN RF Transistor C • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.


    Original     		PDF MMBTH10RG OT-23 MMBTH10RG

    MMBTH34

    Abstract: MPSH11
    Text: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.


    Original     		PDF MMBTH34 100mA 300MHz, MPSH11 OT-23 MMBTH34

    C1995

    Abstract: national semiconductor marking RRD-B30M115 IE A150 MMBTH34 ICE20 IC Marking M03 8548
    Text: MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 mA to 15 mA range to 300 MHz and low frequency drift common-base VHF oscillator applications with high output levels for driving


    Original     		PDF MMBTH34 MMBTH34-3K C1995 national semiconductor marking RRD-B30M115 IE A150 ICE20 IC Marking M03 8548

    MPSH10

    Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p

    MMBTH24

    Abstract: MPSH11 MPSH24 V30I
    Text: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


    Original     		PDF MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24 V30I

    MPSH24

    Abstract: MMBTH24 MPSH11
    Text: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


    Original     		PDF MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters

    NPN rf transistor

    Abstract: FPNH10
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10 NPN rf transistor FPNH10

    mpsh10

    Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p

    TRANSISTOR C 3223

    Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
    Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 TRANSISTOR C 3223 MMBTH10 Spice Model NPN power transistor spice MMBTH10

    y-parameter

    Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		PDF FPNH10 y-parameter common base amplifier circuit designing FPNH10 TRANSISTOR C 3223

    75A91

    Abstract: No abstract text available
    Text: SGS-THOMSON SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS • ■ ■ . ■ ■ CLASS C 1.6 GHz COMMON BASE REFRACTORY/GOLD METALLIZATION EFFICIENCY = 50% MIN. P o u t = 4.5 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1894 is a common base silicon NPN bipolar


    OCR Scan     		PDF SD1894 SD1894 75A91

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


    OCR Scan     		PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

    Untitled

    Abstract: No abstract text available
    Text: October 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 p-A to 15 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    OCR Scan     		PDF MMBTH34 MMBTH34-3K

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		PDF MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100

    MMBTH10 Spice Model

    Abstract: No abstract text available
    Text: S iM E C D fC U C T O R MPSH10 MMBTH10 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    OCR Scan     		PDF MPSH10 MMBTH10 28E-18 MPSH10 MMBTH10 Spice Model