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    COOL MOS POWER TRANSISTOR Search Results

    COOL MOS POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    COOL MOS POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60C3

    Abstract: 11N60C SPP11N60C3 transistor 11n60c3 AR1010
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 11N60C3 11N60C transistor 11n60c3 AR1010

    07N60C3

    Abstract: No abstract text available
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3

    07N60C3

    Abstract: 07n60c 07n60
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5
    Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 SPPx6N60S5/SPBx6N60S5 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5

    07N60C3 equivalent

    Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    03N60C3

    Abstract: No abstract text available
    Text: SPP03N60C3 SPB03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original     		PDF SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391 03N60C3

    SPD04N60C3

    Abstract: 04n60c3
    Text: SPD04N60C3 SPU04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		PDF SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3

    03n60s5

    Abstract: SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5
    Text: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5

    02N60S5

    Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
    Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    03n60

    Abstract: 03n60c3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4421 03N60C3 03n60

    07n60s5

    Abstract: 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5
    Text: SPI07N60S5 SPP07N60S5, SPB07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPI07N60S5 SPP07N60S5, SPB07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx3N60S5/SPBx3N60S5 SPP07N60S5 Q67040-S4172 07n60s5 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Text: SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5

    04n60c3

    Abstract: 04N60C DSA0031699
    Text: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		PDF SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699

    SPN03N60S5

    Abstract: 03N60S5 GPS05560 VPS05163
    Text: SPN03N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax 650 V •=Optimized capacitances RDS on 1.4 Ω


    Original     		PDF SPN03N60S5 OT-223 Q67040-S4203 VPS05163 03N60S5 SPN03N60S5 03N60S5 GPS05560 VPS05163

    V4680

    Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
    Text: SPN01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A

    SMD Diode V6 marking code

    Abstract: SPP02N60C3
    Text: SPP02N60C3 SPB02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated


    Original     		PDF SPP02N60C3 SPB02N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4392 Q67040-S4393 SMD Diode V6 marking code

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5

    SPN02N60S5

    Abstract: 02N60S5 VPS05163 GPS05560
    Text: SPN02N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 SPN02N60S5 02N60S5 VPS05163 GPS05560

    Q67040-S4351

    Abstract: SPP06N80C2
    Text: Preliminary data SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 900 mW · Extreme dv/dt rated


    Original     		PDF SPP06N80C2 P-TO220-3-1 Q67040-S4351 Q67040-S4351 SPP06N80C2

    20n60c3

    Abstract: 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3
    Text: SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPP20N60C3 SPB20N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4398 20N60C3 20n60c3 20N60C3 equivalent spp20n60c3 TRANSISTOR SMD MARKING CODE SPB20N60C3 spp20n60 TRANSISTOR SMD MARKING CODE 7A SDP06S60 Q67040-S4397 smd 20n60c3

    03N60C3

    Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		PDF SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3