Untitled
Abstract: No abstract text available
Text: MPSH10 MPSH11 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator
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MPSH10
MPSH11
MPSH10
MPSH11
100MHz
MPSH10)
MPSH11)
22-May
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MARKING CODE CCB
Abstract: Transistor C3E
Text: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and
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CMPTH10
OT-23
26-September
100MHz
MARKING CODE CCB
Transistor C3E
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RF POWER TRANSISTOR 100MHz
Abstract: uhf vhf amplifier Transistor C3E CMPTH10 rf amplifier 10mhz MARKING CODE C3E
Text: Central TM Semiconductor Corp. CMPTH10 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and
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CMPTH10
CMPTH10
OT-23
100MHz
RF POWER TRANSISTOR 100MHz
uhf vhf amplifier
Transistor C3E
rf amplifier 10mhz
MARKING CODE C3E
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Transistor C3E
Abstract: RF TRANSISTOR CMPTH10 MARKING CODE C3E marking code R5 sot23
Text: CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF
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CMPTH10
CMPTH10
OT-23
100MHz
Transistor C3E
RF TRANSISTOR
MARKING CODE C3E
marking code R5 sot23
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Transistor C3E
Abstract: MARKING CODE C3E CMPTH10 Low Noise uhf transistor marking code RB marking C3E uhf vhf amplifier marking code C3E SOT-89
Text: Central CMPTH10 TM Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and
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CMPTH10
OT-23
100MHz
26-September
Transistor C3E
MARKING CODE C3E
CMPTH10
Low Noise uhf transistor
marking code RB
marking C3E
uhf vhf amplifier
marking code C3E SOT-89
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transistor marking 3em
Abstract: MMBTH10
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product Marking Code: 3EM NPN VHF/UHF
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MMBTH10
OT-23
100MHz,
300us,
transistor marking 3em
MMBTH10
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transistor marking 3em
Abstract: transistors for uhf oscillators marking code 3EM 400uAdc
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product
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MMBTH10
OT-23
300us,
transistor marking 3em
transistors for uhf oscillators
marking code 3EM
400uAdc
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uhf transistor 100v
Abstract: No abstract text available
Text: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR ADVANCE INFORMATION Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
100mA,
400mA
100MHz,
300ms,
DS31034
uhf transistor 100v
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NEW PRODUCT NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
400mA
100MHz,
300ms,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NEW PRODUCT NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
100mA,
400mA
100MHz,
300ms,
DS31034
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transistor marking k3y
Abstract: No abstract text available
Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR NEW PRODUCT Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH10
100mA
OT-23
OT-23,
MIL-STD-202,
400mA
100MHz,
300ms,
DS31031
transistor marking k3y
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBTH10 Features • • • Designed for VHF/UHF Amplifier applications and high output VHF Oscillators High current gain bandwidth product
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MMBTH10
OT-23
100uAdc,
10uAdc,
25Vdc
100MHz,
300us,
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Untitled
Abstract: No abstract text available
Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR ADVANCE INFORMATION Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH10
100mA
OT-23
OT-23,
MIL-STD-202,
100mA,
400mA
100MHz,
300ms,
DS31031
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NEW PRODUCT NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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PDF
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
100mA,
400mA
100MHz,
300ms,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NEW PRODUCT NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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PDF
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
400mA
100MHz,
300ms,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NEW PRODUCT NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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PDF
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
400mA
100MHz,
300ms,
DS31034
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Untitled
Abstract: No abstract text available
Text: MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR ADVANCE INFORMATIION Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA
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MMBTH24
100mA
OT-23
OT-23,
MIL-STD-202,
100mA,
400mA
100MHz,
300ms,
DS31034
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AD73360
Abstract: analog devices Device
Text: a Six-Input Channel Analog Front End AD73360 FEATURES Six 16-Bit A/D Converters Programmable Input Sample Rate Simultaneous Sampling 77 dB SNR 64 kS/s Maximum Sample Rate –83 dB Crosstalk Low Group Delay 25 s Typ per ADC Channel Programmable Input Gain
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16-Bit
28-Lead
44-Lead
AD73360
AD73360AR
AD73360AR-REEL
AD73360ASU
AD73360ASU-REEL
pdf\200\AD73360
AD73360
analog devices Device
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CRH100
Abstract: R02F uio2 CRH50
Text: Metal Oxide Film Resistors CRH (JIS Standard : JIS C 6409) CRH series fixed metal oxide film resistors are a modified version of conventional nickel chromuim metal film resistor, CRB series, which is very stable and reliable. CRH is manufactured using ROHM’s unique sputtering process which reduces the
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CRH50
CRH100X
CRH200
CRH100
SRH100X
CHH50
CHH100X
OTH200
CRH300
R02F
uio2
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CRB 1.0 m
Abstract: No abstract text available
Text: 2SC4214 SILICON NPN PLANAR TYPE TRANSISTOR UHF TV TUNER RF AMPLIFIER APPLICATIONS. • • • U n it in m m Low Noise Figure : NF = 2.8dB Typ. High Power Gain V q q = 4.5V : Gpb = 15dB (Typ.) Excellent Forward AGC C haracteristics M A X IM U M RATINGS (Ta = 25°C)
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2SC4214
CRB 1.0 m
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2SC3828
Abstract: marking HB TV power transistor
Text: TOSHIBA 2SC3828 TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE 7 < ; r Unit in mm UHF TV TUNER RF AMPLIFIER APPLICATIONS. +ag SÌ9-Q 3 • • • Low Noise Figure : NF = 3.5dB Typ. High Power Gain : Gpb = 17dB (Typ.) Excellent Forward AGC Characteristics . Q 65
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2SC3828
--Q15
Ta-25
nA000
2SC3828
marking HB
TV power transistor
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HD6321P
Abstract: 68B21 HD63B21P MC68B21 HD62 hitachi
Text: HD6321/HD6821-PIA Peripheral Interface Adapter The HD6321/HD6821 Peripheral Interface Adapter provides the universal means of interfacing peripheral equipment to the HD6800 Microprocessing Unit (MPU). This device is capable of interfacing the MPU to peripherals through two 8-bit bi
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HD6321/HD6821---------PIA
HD6321/HD6821
HD6800
HD6321/HD6821
HD6821)
HD6321)
HD6321P
68B21
HD63B21P
MC68B21
HD62 hitachi
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Untitled
Abstract: No abstract text available
Text: 2SC4214 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN PLANAR TYPE • mm UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm +ag S Ì9 - Q 3 • Low Noise Figure : NF = 2.8dB Typ. • High Power Gain V qq = 4.5V : Gpb = 15dB (Typ.) • Excellent Forward AGC Characteristics
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2SC4214
150rw
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transistor marking code 443
Abstract: Transistor C3E marking code C3E SOT-89 MARKING CODE C3E
Text: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output
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OCR Scan
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PDF
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CMPTH10
OT-23
CP302
26-September
OT-23
transistor marking code 443
Transistor C3E
marking code C3E SOT-89
MARKING CODE C3E
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