Untitled
Abstract: No abstract text available
Text: ASP AUSTIN SEMICONDUCTOR, INC. DRAM AS4LC4M4 883C 4 MEG X 4 DRAM 4 MEG x 4 DRAM 3.3V, E D O P A G E M O D E AVAILABLE IN MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 • SMD Planned - 24/28-Pin FEATURES Vcc DQ1 DQ2 WE RÄ5 NC • Industry-standard x4 pinout, timing, functions and
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MIL-STD-883
24/28-Pin
150mW
048-cycle
OPT067
1D02117
000017S
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NN5118160
Abstract: No abstract text available
Text: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS
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NN5116160A
NN5118160A
16bit
NN5116160A/18160A
NN5116
60AXX
128ms
NN51181
NN5118160
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NN518128
Abstract: nn514405 518128
Text: NN518128 seríes Fast Page Mode CMOS 128Kx8bit Dynamic RAM NPN>a DESCRIPTION The N N 518128 is a high performance C M OS Dynamic Random Access Memory organized as 131,072 words by 8 bits. The NN 518128 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in
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NN518128
128Kx8bit
NN518128L
128KX
NN518128XJ
nn514405
518128
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nn514406
Abstract: No abstract text available
Text: NN514405A / NN514405Bseries EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN)a( DESCRIPTION The NN514405A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405A/B series is fabricated with advanced CMOS technology and designed with innovative design techniques
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NN514405A
NN514405Bseries
NN514405A/B
NN514405AL/BL
NNS1440SA
NNS1440SBaerÃ
NN514405XXXI
128ms
nn514406
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Untitled
Abstract: No abstract text available
Text: M D K l W N N 5 1 V 4400 B s e rie s Fast Page Mode CMOS 1Mx4bit Dynamic RAM DESCRIPTION The N N 51V4400B series is a high perform ance CMOS Dynam ic Random A ccess M em ory organized as 1,048,576 words by 4 bit. The N N 51V4400B series is fabricated with advanced C M OS technology and designed with innovative de
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51V4400B
NN51V4400B
NN51V4400BL
V4400BXX
128ms
G13G4
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nn514260
Abstract: No abstract text available
Text: NN514260/ NN514260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM -y- DESCRIPTION The NN514260/A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514260/A series is fabricated with advanced CMOS technology and de
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NN514260/
NN514260A
256KX
16bit
NN514260/A
NN514260L/AL
0DD0S52
NN514260
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RL10V
Abstract: No abstract text available
Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and
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V104J232
72-lead
V104J232
RL10V
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Untitled
Abstract: No abstract text available
Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative
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NN51V18165B
16bit
NN51V18165BL
1005bSD
NN51V181
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QML-38535
Abstract: qml38535
Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 19 20 21
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JUL94
TDD47DA
001174fl
QML-38535
qml38535
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Untitled
Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. AS4C4256 883C 256 X 4 DRAM 256K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION SMD 5962-90617 MIL-STD-883 PIN ASSIGNMENT Top View 20-Pin LCC FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL
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AS4C4256
MIL-STD-883
20-Pin
175mW
12-cycle
4C4256
DS000014
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Untitled
Abstract: No abstract text available
Text: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24, 1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast Page
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HM51W17800
152-word
ADE-203-664C
28-pin
ns/60
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MT4C1024
Abstract: MT4C1024-8
Text: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL
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MT4C1024
MIL-STD-883
18-Pin
175mW
512-cycle
MT4C1024-8
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4000LAB32S SERIES 4 M-W ORD BY 32-BIT DYNAMIC RAM MODULE SO D IM M FAST PAGE MODE Description The MC-42S4000LAB32S series is a 4,194,304 w ords by 32 bits dynam ic RAM m odule (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /ÎPD42S17800L are assembled.
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MC-42S4000LAB32S
32-BIT
PD42S17800L
72PIN
M72S-50A2-2
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TAA 691
Abstract: No abstract text available
Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400A
HY5116400A
HY5116400Ato
1AD23-10-MAY94
HY5116400AJ
HY5116400ASU
HY5116400Ã
HY5116400ASLT
TAA 691
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Untitled
Abstract: No abstract text available
Text: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed
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NN514800
NN514800L
S12KX
NN514800XJ
128ms
512Kx8
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-422000A32BA, 422000A32FA 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C -4 2 2 0 0 0 A 3 2 B A , 4 2 2 0 0 0 A 3 2 F A a re 2 ,0 9 7 ,1 5 2 w o r d s b y 32 b its d y n a m ic R A M m o d u le o n w h ic h 4
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MC-422000A32BA,
422000A32FA
32-BIT
M72B-S0A45
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 1M X 64-Bit EDO-DRAM Module 3.3V 1M X 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60/-70 HYM72V1005GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
HYM64V1005GU-50/-60/-70
HYM72V1005GU-50/-60/-70
168pin
V1005GU-50/-60/-70
L-DIM-168-10
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V DRAM Modules HYM64Vx005GCD L -60 144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique
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HYM64Vx005GCD
L-DIM-144-C1
L-DIM-144-C4
2Mx64
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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PDF
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scl 1444
Abstract: v 4005
Text: 3.3V DRAM Modules HYM64Vx005GC L -60 144 pin SO-DIMM EDO-DRAM Modules Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Modules with 8 Byte busses • Chip-on Board (COB) Assembly Technique • One bank 1M x 64, 2M x 64, 4M x 64 and 8M x 64 non-parity module organisations
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HYM64Vx005GC
L-DIM-144-1
L-DIM-144-4
2Mx64
scl 1444
v 4005
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PDF
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qml-38535
Abstract: 54BCT245 SMD loub
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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5962-9051401MRX
SNJ54BCT245J
5962-9051401MSX
SNJ54BCT245W
5962-9051401M2X
SNJ54BCT245FK
qml-38535
54BCT245
SMD loub
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PDF
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Untitled
Abstract: No abstract text available
Text: AMD £ 1 R E V IS IO N S LTR DATE YR-MO-DA DESCRIPTION AiUml /Vrhpniir. «'*<|ua t i on tnr unbiased hake under marqin test K f ' l m a A, back end iM r q in te st step i. C orr ec te d m i l i t a r y ¡;fjr-t numbers for d evi ce types 01 ana 0 2 , Technical channes
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--MS-904
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SMJ55161-80GBM
Abstract: SMJ55161-75HKCM SQ1D 5962-94549 QML-38535 sq10 amplifier smd 5Gs 5962-9454901MXA 5962-9454903QYC SMJ55161-70HKCM
Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R167-96. 96-07-01 M. A. Frye Changes in accordance with NOR 5962-R126-97. 96-11-19 M. A. Frye Add device type 03. Add vendor CAGE 01295 as source of supply for device type 03. Update boilerplate. Editorial changes throughout.
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5962-R167-96.
5962-R126-97.
R00470Ã
SMJ55161-80GBM
SMJ55161-75HKCM
SQ1D
5962-94549
QML-38535
sq10 amplifier
smd 5Gs
5962-9454901MXA
5962-9454903QYC
SMJ55161-70HKCM
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PDF
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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PDF
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