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    Xicon Passive Components XRL10V220

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    Bristol Electronics XRL10V220 1,500
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    Basser GRL10VW

    Loudspeaker grille; MDF; 250mm; Int.height: 32mm
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    TME GRL10VW 8 1
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    RL10V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    v110h

    Abstract: V53C104F
    Text: M O S E L VTTELÊ C V53C 104F H IG H PE R FO RM A N CE, L O W P O W E R 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D Y N A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns


    OCR Scan     		V53C104F V53C104F 60/60L 70/70L 80/80L V53C104FL 200mA 200nA V53C104F-80 V53C104F-1 v110h PDF

    Untitled

    Abstract: No abstract text available
    Text: NN518125series EDO Hyper Page Mode CMOS 128KX 8bit Dynamic RAM N H N /V DESCRIPTION T h e N N 5 1 8 1 2 5 series is a high perform ance C M O S D ynam ic R andom A ccess M e m o ry organized as 1 3 1 ,0 7 2 words by 8-bits. T h e N N 5 1 8 1 2 5 series is fabricated with advanced C M O S technology and designed with innovative design tech­


    OCR Scan     		NN518125series 128KX NN518125 NN518 25XJ-XX 0D1432 PDF

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V53C311640500 3.3 VOLT 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C311640500 50 60 70 Max. RAS Access Time, Orac 50 ns 60 ns 70 n Max. Column Address Access Time, 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, PC)


    OCR Scan     		V53C311640500 V53C311640500 cycles/64 24/26-pin 53C311640500 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC PRELIMINARY V104J232, V104J236 512K x 32, 512K x 36 SIMM Features Description m 524,288 x 32 bit or 524, 288 x 36 bit The V 104J232 Memory Module is organized as 52 4 ,2 8 8 x 32 bits in a 72-lead single-in-line module. The 51 2K x 32 memory module uses 16 MoselVitelic 256K x 4 DRAMs. The V104J236 is organized


    OCR Scan     		V104J232, V104J236 104J232 72-lead V104J232/236 PDF

    Untitled

    Abstract: No abstract text available
    Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative


    OCR Scan     		NN51V18165B 16bit NN51V18165BL 1005bSD NN51V181 PDF

    RL10V

    Abstract: No abstract text available
    Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description u 524,286 x 32 bit organizations • Utilizes 256K x 4 CM O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns ■ Fast Page mode operation _ ■ Low power dissipation ■CAS before RAS refresh, RAS only refresh, and


    OCR Scan     		V104J232 72-lead V104J232 RL10V PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V iT E U C V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 50 ns 60 ns 70 ns Max. Column Address Access Time, tCAA 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns


    OCR Scan     		V53C181608 16-bit cycles/16 42-pin PDF