Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
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cc 1m16
Abstract: WF4M16-XDTX5
Text: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .
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WF4M16-XDTX5
2x2Mx16
150ns
64KBytes
cc 1m16
WF4M16-XDTX5
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
F0201
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MBM29LV160TE70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA
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DS05-20883-5E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0306
MBM29LV160TE70
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MBM29
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-1E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE/BE 70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-1E
MBM29LV800TE/BE
48-pin
F0105
MBM29
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-2E
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
D-63303
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMF2M8-XXX5 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 FEATURES Access Times of 90, 120, 150ns Low Power CMOS Packaging: Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. • 56 lead, Hermetic Ceramic, 0.520" CSOP
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150ns
64KBytes
64KByte
01HXX
120ns
02HXX
03HXX
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csop
Abstract: WF2M16-XXX5
Text: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
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WF2M16-XXX5
2Mx16
150ns
64KBytes
64KByte
01HXX*
120ns
csop
WF2M16-XXX5
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58C1001
Abstract: eeprom 4 pin 128k x 8 eeprom JLCC
Text: EEPROM FT58C1001 128K x 8 EEPROM PIN ASSIGNMENT Top View EEPROM Memory . SPECIFICATIONS 32-Pin CFP , 32-Pin CSOJ 32-Pin CSOP Comm. Ind, Mil MIL-STD-883 M5004 only RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss FEATURES High speed: 150, 200, and 250ns
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FT58C1001
MIL-STD-883
M5004
32-Pin
250ns
20mW/MHz
128-Byte
FT58C1001
58C1001
eeprom 4 pin
128k x 8 eeprom JLCC
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-4E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0201
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S25610
Abstract: WF2M16-XXX5
Text: White Electronic Designs WF2M16-XXX5 PRELIMINARY* 2Mx16 Flash MODULE, SMD 5962-97610 FEATURES Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 . Fits standard 56 SSOP footprint. • 44 pin Ceramic SOJ (Package 102)*
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WF2M16-XXX5
2Mx16
150ns
64KBytes
2Mx16;
04HXX
120ns
05HXX
06HXX
S25610
WF2M16-XXX5
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MC20B
Abstract: CERAMIC SMALL OUTLINE PACKAGE CSOP MC16A MC20A MC24A MC28A MC28B csop16 csop
Text: Ceramic Small Outline Package CSOP 16 Lead Ceramic Small Outline Package NS package Number MC16A 2000 National Semiconductor Corporation MS101110 www.national.com Ceramic Small Outline Package (CSOP) August 1999 Ceramic Small Outline Package (CSOP) 20 Lead Ceramic Small Outline Package
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MC16A
MS101110
MC20A
MC20B
MC24A
MC28A
MC20B
CERAMIC SMALL OUTLINE PACKAGE CSOP
MC16A
MC20A
MC24A
MC28A
MC28B
csop16
csop
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Untitled
Abstract: No abstract text available
Text: bq24745 www.ti.com SLUS761 – DECEMBER 2007 SMBus-Controlled Level 2 Multi-Chemistry Battery Charger With Input Current Detect Comparator UGAT PHAS DCIN 27 26 25 24 23 22 ICREF 1 21 VDDP ACIN 2 20 LGATE VREF 3 19 PGND EAO 4 18 CSOP EAI 5 17 CSON FBO 6 16
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bq24745
SLUS761
30-ns
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Untitled
Abstract: No abstract text available
Text: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH, SMD 5962-97609 FEATURES Low Power CMOS Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .
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150ns
64KBytes
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Untitled
Abstract: No abstract text available
Text: WF2M16-XXX5 HI-RELIABILITY PRODUCT 2Mx16 FLASH MODULE, SMD 5962-97610 pending PRELIMINARY* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Times of 90, 120, 150ns ■ Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).
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WF2M16-XXX5
2Mx16
150ns
64KBytes
2Mx16;
64KByte
64KByte
120ns
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Untitled
Abstract: No abstract text available
Text: WF4M16-XDTX5 HI-RELIABILITY PRODUCT 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • Data Polling and Toggle Bit feature for detection of program or erase cycle completion. ■ Access Time of 90, 120, 150ns ■ Packaging: • 56 Lead, Hermetic Ceramic, 0.520" CSOP Package 213 .
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WF4M16-XDTX5
2x2Mx16
150ns
64KBytes
2Mx16;
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BAT54
Abstract: bq24745 bq24745RHDR bq24745RHDT FDS6680A Si4435 SI4835BDY
Text: bq24745 www.ti.com SLUS761 – DECEMBER 2007 SMBus-Controlled Level 2 Multi-Chemistry Battery Charger With Input Current Detect Comparator UGAT PHAS DCIN 27 26 25 24 23 22 ICREF 1 21 VDDP ACIN 2 20 LGATE VREF 3 19 PGND EAO 4 18 CSOP EAI 5 17 CSON FBO 6 16
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bq24745
SLUS761
BAT54
bq24745RHDR
bq24745RHDT
FDS6680A
Si4435
SI4835BDY
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Untitled
Abstract: No abstract text available
Text: C3 WF4M16-XDTX5 M/HITE /MICROELECTRONICS 2x2Mx16 5V FLASH MODULE ADVANCED* FEATURES • A ccess Tim e of 9 0 , 1 2 0 , 150ns ■ Packaging: • 56 Lead, H e rm e tic Ceram ic, 0.520" CSOP Package 213 . ■ D ata P olling and Toggle Bit fe a tu re fo r d e te ctio n of program
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WF4M16-XDTX5
2x2Mx16
150ns
16-XDTX
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Untitled
Abstract: No abstract text available
Text: m WMF2M8-XOPX5 WHITE / M I C R O E L E C T R O N I C S 2Mx8 MONOLITHIC FLASH ADVANCED* FEATURES • Access Tim es of 9 0 ,1 2 0 ,150nS ■ 5 V o lt Read and W rite . 5V ± 10% S apply. ■ ■ Low Power CMOS Packaging: • 56 lead, Herm etic Ceramic, 0.520" CSOP Package 207 .
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150nS
64KBytes
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c60p06q
Abstract: diode 66a C60P05Q
Text: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability
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6A/50
O-247AC
I7CTS55
1341UIA
C60P05Q
C60P06Q
a-60V
bblS123
c60p06q
diode 66a
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Untitled
Abstract: No abstract text available
Text: WMF2M8-XXX5 •lì Hi-R£LiASIÜTY PRODUCT 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES ■ A cce ss T im e s o f 9 0 , 1 2 0 , 150ns 5 V o lt Read and W rite . 5 V ± 1 0 % S upply. ■ P ackaging: • 56 lead, H e rm e tic C era m ic, 0 .5 2 0 ” CSOP (Package 207).
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64KByte
150ns
01HXX*
120ns
03HXX*
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Untitled
Abstract: No abstract text available
Text: g WMF2M8-XXX5 M/HITE /MICROELECTRONICS 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES • A cce ss Tim es o f 90, 120, 150ns ■ 5 V o lt Read and W r ite . 5V ± 10% Supply. ■ Packaging: • 56 lead, H erm e tic Ceramic, 0.520" CSOP (Package 207).
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150ns
120ns
02HXX*
03HXX*
64KByte
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Untitled
Abstract: No abstract text available
Text: a WMF2M8-XXX5 WHITE /MICROELECTRONICS 2Mx8 MONOLITHIC FLASH, SMD 5962-97609 pending PRELIMINARY* FEATURES • A c c e s s T i m e s o f 9 0 , 1 2 0 , 1 50n s ■ 5 V o l t Read a n d W r i t e . 5 V + 1 0 % S u p p ly . ■ P a c k a g in g : • 56 le a d , H e r m e t i c C e ra m ic , 0 .5 2 0 " CSOP (P a c k a g e 207).
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64KByte
64KByte
150ns
120ns
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AO-20
Abstract: No abstract text available
Text: TT WF4M8-XOPX5 l/VHITE M IC R O E LE C TR O N IC S 4Mx8 DUAUTHIC FLASH FIG. 1 ADVAN CED* FEATURES 56 CSOP TOP VIEW CS1 c A12 C A13C A14 □ A15 C NC L_ NC C NC Cl A 20 L A 19 C A 18 L A17C A 16 _ V:< L GND Z I.'0 6 L NC Z i/o? : NC I RY-BV I OÈÏ? WE Z
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150nS
AO-20
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