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    ADC0811CCN

    Abstract: ch8c 5587 INS8048 ADC0811 ADC0811BCN ADC0811BCV C1995 J20A V20A
    Text: ADC0811 8-Bit Serial I O A D Converter With 11-Channel Multiplexer General Description The ADC0811 is an 8-Bit successive approximation A D converter with simultaneous serial I O The serial input controls an analog multiplexer which selects from 11 input channels or an internal half scale test voltage


    Original     		PDF ADC0811 11-Channel ADC0811CCN ch8c 5587 INS8048 ADC0811BCN ADC0811BCV C1995 J20A V20A

    LM361 application note

    Abstract: LM161J LM3614 LM161 LM261 LM361 LM361H H10C LM161H LM361M
    Text: LM161 LM261 LM361 High Speed Differential Comparators General Description Features The LM161 LM261 LM361 is a very high speed differential input complementary TTL output voltage comparator with improved characteristics over the SE529 NE529 for which it is a pin-for-pin replacement The device has been optimized


    Original     		PDF LM161 LM261 LM361 LM361 SE529 NE529 LM361 application note LM161J LM3614 LM361H H10C LM161H LM361M

    4-bit flash adc

    Abstract: Flash-ADC 10-bit Flash-ADC ADC0820CCN 16 bit Flash-ADC ADC0820 application note 20pin 4bit adc 3 bit Flash-ADC waveform recorder ADC0820
    Text: ADC0820 8-Bit High Speed mP Compatible A D Converter with Track Hold Function General Description Features By using a half-flash conversion technique the 8-bit ADC0820 CMOS A D offers a 1 5 ms conversion time and dissipates only 75 mW of power The half-flash technique


    Original     		PDF ADC0820 4-bit flash adc Flash-ADC 10-bit Flash-ADC ADC0820CCN 16 bit Flash-ADC ADC0820 application note 20pin 4bit adc 3 bit Flash-ADC waveform recorder

    ch8 b

    Abstract: ADC0844 ADC0844BCJ ADC0844BCN ADC0844CCJ ADC0844CCN ADC0848 ADC0848BCN ADC0848CCN C1995
    Text: ADC0844 ADC0848 8-Bit mP Compatible A D Converters with Multiplexer Options General Description Features The ADC0844 and ADC0848 are CMOS 8-bit successive approximation A D converters with versatile analog input multiplexers The 4-channel or 8-channel multiplexers can


    Original     		PDF ADC0844 ADC0848 ch8 b ADC0844BCJ ADC0844BCN ADC0844CCJ ADC0844CCN ADC0848BCN ADC0848CCN C1995

    DC 8557

    Abstract: ADC0841CCN ADC0841 ADC0841BCN ADC0841BCV ADC0841CCV C1995 LM336 22.5 INS8039 EB360
    Text: ADC0841 8-Bit mP Compatible A D Converter Features The ADC0841 is a CMOS 8-bit successive approximation A D converter Differential inputs provide low frequency input common mode rejection and allow offsetting the analog range of the converter In addition the reference input can


    Original     		PDF ADC0841 ADC0841 DC 8557 ADC0841CCN ADC0841BCN ADC0841BCV ADC0841CCV C1995 LM336 22.5 INS8039 EB360

    adc1205

    Abstract: adc1225ccd-1
    Text: ADC1205,ADC1225 ADC1205 ADC1225 12-Bit Plus Sign MuP Compatible A/D Converters Literature Number: SNAS537A ADC1205 ADC1225 12-Bit Plus Sign mP Compatible A D Converters General Description Key Specifications The ADC1205 and ADC1225 are CMOS 12-bit plus sign


    Original     		PDF ADC1205 ADC1225 ADC1225 12-Bit SNAS537A adc1225ccd-1

    Untitled

    Abstract: No abstract text available
    Text: KM48V512DT CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48V512DT 512Kx 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF KM44V16100AK 16Mx4 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,


    OCR Scan     		PDF 16Mx4 pM44V16004AS KM44V16004AS

    Untitled

    Abstract: No abstract text available
    Text: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4105BK 003470b

    Untitled

    Abstract: No abstract text available
    Text: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM41V4000DJ b414E 7Tb414E 003410b

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •


    OCR Scan     		PDF KMM5322000AV/AVG KMM5322000AV- KMM5322000AV-10 130ns 150ns 180ns KMM532200QW bitsx32 KMM532200QAV

    Untitled

    Abstract: No abstract text available
    Text: IN T E G R A T E D C IR C U IT S UC3174 UC3175 U IX IIT R O D E Full-Bridge Power Amplifier PRELIMINARY FEATURES DESCRIPTION • Precision Current Control • ±800mA Load Current These full-bridge power amplifiers are rated for continuous output current of 0.8 Amperes


    OCR Scan     		PDF UC3174 UC3175 800mA UC3174 UC3175

    KM44C16100AS

    Abstract: No abstract text available
    Text: K M 4 4 C 161 OOAS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or


    OCR Scan     		PDF 16Mx4 KM44C16100AS 7Rb4142 KM44C16100AS

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1004DT 1b4142

    KM48V2100B

    Abstract: No abstract text available
    Text: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM48V2000BK 48V2000BK 03552A KM48V2100B

    Untitled

    Abstract: No abstract text available
    Text: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM418C256LL KM418C256LL-7 KM418C256LL-8 KM418C256LL-10 130ns 150ns 180ns KM418C256LL

    KMM366F400BK

    Abstract: No abstract text available
    Text: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM366F400BK KMM366F410BK 4Mx64 KMM366F40 300mil 168-pin 110ns KMM366F400BK

    Untitled

    Abstract: No abstract text available
    Text: KM718V889 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. - 2 Stage Pipelined Operation With 4 Burst • On-Chip Address Counter. • Self-Timed W ite Cyde. • On-Chip Address and Control Registers.


    OCR Scan     		PDF KM718V889 100-TQFP-1420A 256Kx18 KM718V889

    KM44V16104AK

    Abstract: samsung dram
    Text: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM372F3200AK2 KMM372F3200AK2/AS2 KMM372F3280AK2/AS2 32Mx72 16Mx4, KMM372F320 16Mx4bit 400mil 48pin KM44V16104AK samsung dram

    DC-361

    Abstract: No abstract text available
    Text: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation


    OCR Scan     		PDF KMM372V213BK KMM372V213BK/BS 2Mx72 300mil 48pin 168-pin KMM372V213BS cycles/32ms, DC-361

    NJMOP-07

    Abstract: No abstract text available
    Text: ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER NJM0P-07 T he NJM OP-07 is a ultra-low input offset voltage and bias current, low drift and high gain operational am plifier with internal frequency com pensation. The NJM OP-07 is suitable for a high accurated instrum ental amplifier.


    OCR Scan     		PDF NJM0P-07 OP-07 300mW f-125 MJM0P-07D KJMOP-07M NJMOP-07

    Untitled

    Abstract: No abstract text available
    Text: IIN C A rN / / [P ^ IE L O IM K M Ä ^ Y L i n t A B _ TECHNOLOGY ¡¿ u s Low P ow er V id e o D iffe re n c e A m p lifie r October 1992 F€OTUR€S D C S C R IP T IO N • Differential or Single-Ended Gain Block Adjustable 35MHz ■ -3dB Bandwidth, Av = ±10


    OCR Scan     		PDF 35MHz LT1189 20V/HS 10MHz LT1193 170mV. TELBC499-3977

    TAA 691

    Abstract: No abstract text available
    Text: KM48V512DJ CMOS DRAM ELECTRONICS 512K X 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF KM48V512DJ 512Kx 512Kx8 VU41H2 TAA 691