Untitled
Abstract: No abstract text available
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101534 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ. 1.1.3 VSWR: 1.25:1 MAX.
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CT2010ALN
MIL-STD-454,
IP-1014.
MC0023.
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Untitled
Abstract: No abstract text available
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE LEAD FREE PLATING ASSEMBLY DWG: 1101654 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ.
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CT2010ALNF
MIL-STD-454,
IP-1014.
MC0023.
04-E094
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CT2010ALNF
Abstract: 1010135 MIL-STD-454 requirement 9
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE LEAD FREE PLATING ASSEMBLY DWG: 1101654 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ.
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CT2010ALNF
MIL-STD-454,
824W154.
755W002.
09-E0833
CT2010ALNF
1010135
MIL-STD-454 requirement 9
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CT2010ALN
Abstract: 1009055 MIL-STD-454
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT2010ALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE ASSEMBLY DWG: 1101534 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 4 GHZ. 1.1.3 VSWR: 1.25:1 MAX.
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CT2010ALN
MIL-STD-454,
824W154.
755W002.
09-E0833
CT2010ALN
1009055
MIL-STD-454
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tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
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CT2525ALN
Abstract: CT3523 CT2010A
Text: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
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CT2525
CT3518A*
CT2335ALN
CT2335
CT3523T*
CT3725ALN
CT3725TALN*
CT3725
CT3737ALN
CT3737
CT2525ALN
CT3523
CT2010A
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ina 124
Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Text: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz
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42TVA
R0300
HR0500
TS0300
TS0300W
TS0400
TS0500
TS0500W1
TS0500W
TS0500WB1
ina 124
CT2525ALN
"beryllium oxide"
ct2335
SMT3725ALN
SC0066M
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CT2525ALN
Abstract: CT2010A
Text: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
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CT2525
CT3518A*
CT2335ALN
CT2335
CT3523T*
CT3725ALN
CT3725TALN*
CT3725
CT3737ALN
CT3737
CT2525ALN
CT2010A
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CT-1005
Abstract: g 0247 0372
Text: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO
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CT0402
CT2010A*
CT0505ALN
CT0505
CT1005
CT1005TALN
CT1206
CT1206ALN
CT2010
CT2010ALN
CT-1005
g 0247
0372
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