CT3737TALNF
Abstract: 1010995
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED, ROHS COMPLIANT. ASSEMBLY DWG: 2900194 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ.
|
Original
|
CT3737TALNF
MIL-PRF-55342.
824W154.
755W002.
08-E0712
1010995
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737 DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101224 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4
|
Original
|
CT3737
MIL-STD-454,
824W154.
755W002.
08-E0341
|
PDF
|
IP-1014
Abstract: No abstract text available
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ. 1.1.3
|
Original
|
CT3737TALN
MIL-PRF-55342.
IP-1014.
MC0023.
05-E0812
IP-1014
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALNF DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED, ROHS COMPLIANT. ASSEMBLY DWG: 2900194 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ.
|
Original
|
CT3737TALNF
MIL-PRF-55342.
IP-1014.
MC0023.
05-E0811
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737 DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101224 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4
|
Original
|
CT3737
MIL-STD-454,
IP-1014.
MC0023.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.6 GHZ. 1.1.3
|
Original
|
CT3737TALN
MIL-PRF-55342.
IP-1014.
MC0023.
04-E101
|
PDF
|
CT3737TALN
Abstract: 1010155
Text: TITLE: ENGINEERING CONTROL DRAWING. PART IDENTIFIER: CT3737TALN DESCRIPTION: HIGH POWER CHIP TERMINATION, ALUMINUM NITRIDE, TUNED. ASSEMBLY DWG: 2900134 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC – 3.0 GHZ. 1.1.3
|
Original
|
CT3737TALN
MIL-PRF-55342.
824W154.
755W002.
08-E0534
1010155
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737S DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101864 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX.
|
Original
|
CT3737S
MIL-STD-454,
IP-1014.
MC0023.
04-E159
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: CT3737F DESCRIPTION: HIGH POWER CHIP TERMINATION, BERYLLIA ASSEMBLY DWG: 1101874 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 IMPEDANCE: 50Ω NOMINAL. 1.1.2 FREQUENCY: DC - 2 GHZ. 1.1.3 VSWR: 1.35:1 MAX. 1.1.4
|
Original
|
CT3737F
MIL-STD-454,
IP-1014.
MC0023.
04-E231
|
PDF
|
SC0066M
Abstract: No abstract text available
Text: Terminations Introduction Features • Nominal Impedance 50 or 100 Ohms • Power Rating 5 to 250 Watts • Frequency Range from DC to 26.5 GHz • Substrates in BeO, AlN or Alumina • Three Package Styles Available Surface Mount, Chip, and Pill • S-parameter Data Available
|
Original
|
Non-50
SC0066M*
SC0067M*
SC0065M*
SC0051M*
SC0054M*
SC0055M*
SC0057M*
SC0059M*
SC0056M*
SC0066M
|
PDF
|
tva0300n07
Abstract: mmic amplifier marking code N10 MTVA0300N05 PST-02-A-1 TVA0300N07W3 electronic passive components catalog SC-1016 MTVA0300 SMT2010TALN 42TVA
Text: EMC TECHNOLOGY Custom Engineered Solutions 8851 SW Old Kansas Ave. 772 286-9300 ISO 9001 & 14001 Certified M I C R OWAV E C O M P O N E N T S www.emct.com Resistive Products, Smart Loads , High Reliability Stuart, FL 34997 (800) 544-5594 Thermopads®, Equalizers,
|
Original
|
|
PDF
|
MTVA0300N07
Abstract: MTVA0300
Text: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-Flex Lab-Flex® S Lab-Flex® AF Semi-Rigid, Conformable & Flexible Semi-Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV
|
Original
|
|
PDF
|
trm a55
Abstract: No abstract text available
Text: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-Flex Lab-Flex® S Lab-Flex® AF Semi-Rigid, Conformable & Flexible Semi-Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV
|
Original
|
|
PDF
|
CT2525ALN
Abstract: CT3523 CT2010A
Text: Chips – Standard Terminations EMC’s high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
|
Original
|
CT2525
CT3518A*
CT2335ALN
CT2335
CT3523T*
CT3725ALN
CT3725TALN*
CT3725
CT3737ALN
CT3737
CT2525ALN
CT3523
CT2010A
|
PDF
|
|
|
CT3523
Abstract: No abstract text available
Text: H I G H P O W E R C H I P T E R M I N A T I O N S EMC's high power chip terminations are optimized for RF performance. Since most types are printed to value, the variability of capacitive reactance and localized hot spots associated with trimming are eliminated. Reduced lot variation
|
OCR Scan
|
SMT3737
SMT3725
SMT2525
SMT2010
CT3523
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TERMINATIONS AND RESISTORS The EMC Difference: ^ EMC'S high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability of capacitive reactance and localized hot spots associated with trimming are eliminated.
|
OCR Scan
|
CT3737
CT3725
CT2335
CT2525
CT2010
CT1005
T0505
CT1206
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^ EMC'S high power chip terminations are optimized for RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance and localized hot spots associated w ith trimming are eliminated. Reduced lot vanation means your circuit performs so consistently that in most cases no tuning is required.
|
OCR Scan
|
CT2010
CT1005
CT0505
CT1206
|
PDF
|
ina 124
Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Text: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz
|
OCR Scan
|
42TVA
R0300
HR0500
TS0300
TS0300W
TS0400
TS0500
TS0500W1
TS0500W
TS0500WB1
ina 124
CT2525ALN
"beryllium oxide"
ct2335
SMT3725ALN
SC0066M
|
PDF
|
CT2525ALN
Abstract: CT2010A
Text: f*TTTS Tedm ohm/ Term inations Chips - Standard EMC's high power chip terminations are optimized fo r RF performance. All EMC chips are designed to minimize the variability o f capacitive reactance. Localized hot spots associated with trimming have been eliminated. Reduced
|
OCR Scan
|
CT2525
CT3518A*
CT2335ALN
CT2335
CT3523T*
CT3725ALN
CT3725TALN*
CT3725
CT3737ALN
CT3737
CT2525ALN
CT2010A
|
PDF
|
CT-1005
Abstract: g 0247 0372
Text: lin T u l litologi/ Chips - Standard Term inations S election Table Power W Substrate Frequency Max. Avg. (GHz) VSWR Type 2 5 5 10 15 15 15 15 20 20 20 40 50 80 85 100 120 120 150 150 150 250 * BeO Alumina AIN BeO BeO AIN BeO AIN BeO AIN Alumina AIN BeO
|
OCR Scan
|
CT0402
CT2010A*
CT0505ALN
CT0505
CT1005
CT1005TALN
CT1206
CT1206ALN
CT2010
CT2010ALN
CT-1005
g 0247
0372
|
PDF
|
