Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE D • L427S2S D0344[]fl Sib ■ NECE MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The M C-424000A36 is a fast-page dynam ic RAM mod ule organized as 4,194,304 words by 36 bits and de
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L427S2S
D0344[
MC-424000A36
36-Bit
C-424000A36
72-Pin
HPD4217400LE
400-mll
HPD424100LA
300-mil
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uaa170
Abstract: No abstract text available
Text: 47E D • SIEM ENS A235bD5 SIEMENS 0034457 =5 « S I E Ù AKTIENGESELLSCHAF •F S S -\3 -O l LED Driver for Light Spot Displays UAA 170 Bipolar IC IC fo r drivin g 16 lig h t em ittin g diodes. D e pending on th e input vo lta g e, th e individual LED s are d riven w ithin one row in fo rm of a lig h t spot. T he U A A 170 pro vid e s a linear relation
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A235bD5
uaa170
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50t65
Abstract: bd650 BD644
Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.
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BD644;
BD650;
O-220
BD643,
BD645,
BD647,
BD651.
BD644
50t65
bd650
BD644
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Z16C32
Abstract: No abstract text available
Text: P r e l im in a r y P r o d u c t S pecific a tio n < £ SLO E Z16C32 IU SC I n t e g r a t e d U n i v e r s a l S e r ia l C o n t r o l l e r FEATURES • Two Full-Capacity 20 MHz DMA Channels, Each with 32-Bit Addressing and 16-Bit Data Transfers.
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Z16C32
32-Bit
16-Bit
68-Pin
Z16C32IUSC"
Z16C32
Z16C3220VSC
16C32
Z16C32,
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FE150F
Abstract: FE150F9 UL-1950
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE150F
FE150F9
005005b
UL-1950
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79c965
Abstract: AMD 79c97* lance
Text: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and
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Am79C965
32-Bit
Am486â
PCnet-32
79C965
79c965
AMD 79c97* lance
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Untitled
Abstract: No abstract text available
Text: 47E SIEM ENS D • 6¿35b05 SIEMENS 003M4G7 5 »SIEG AKTIENGESELLSCHAF T-nrvTkv, VCR Stereo Processor TDA 6620 Preliminary Data Bipolar 1C Features • • • • Inexpensive solution for VCR sets due to a low cost external writing Identification signal based on the PLL-principle
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35b05
003M4G7
23SbOS
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BC105
Abstract: No abstract text available
Text: P h ilip s Sem iconductors Prelim inary specification S ilico n D arlington pow er tra n sisto rs DESCRIPTION QUICK REFER EN CE DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope intended for audio and video
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O-126
BD676A,
BD678A
BD680A
BD675A
BD679A
BD677A
BD675A/BD677A/BD679A
BC105
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Untitled
Abstract: No abstract text available
Text: HN62W448I Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-770A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62W448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has realized high speed normal access 120 ns on 3.3 V supply.
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524288-word
16-bit/1048576-word
ADE-203-770A
HN62W448I
524288word
16-bit
1048576-word
42-pin
44-pin
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HN62448NI
Abstract: d0344 44-B50
Text: HN62448NI Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-771A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62448NI series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. As it has realized high speed normal access 100 ns and page mode
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HN62448NI
524288-word
16-bit/l048576-word
ADE-203-771A
524288word
16-bit
1048576-word
42-pin
44-pin
d0344
44-B50
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BD679
Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA
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BD675;
BD679
OT-32
BD676,
BD678,
BD680,
BD682
BD684.
BD675
BD680
T-988
BD676
BD678
BD684
D0344
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Untitled
Abstract: No abstract text available
Text: FINAL a IN D :-12/15 Advanced Micro Devices P A L C E 1 6 V 8 Z -1 2 /1 5 Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 30 pA Standby Current — 12 ns propagation delay for “-1 2” version
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20-Pin
PAL16R8
PAL10H8
QQ344A1
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AS4C14405-60JC
Abstract: LR 3441 AS4C14405 DDD717 alliance as4C14405 AS4C1440S
Text: High Perform ance 1M X 4 CMOS DRAM « II I i A S 4 C 14405 1M X 4 C M O S E D O D R A M Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 w ords x 4 bit • H igh speed * 1024 refresh cycles, 16 m s refresh interva - KAS-only o r CAS- before -RAS refresh
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AS4C14405
26/20-pin
Capacitance15
AS4C14405
26/20-pin_
AS4C14405-60JC
1440S
AS4C14405-60JC
LR 3441
DDD717
alliance as4C14405
AS4C1440S
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE150F
FE150F9
FE150F
005002b
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amd215
Abstract: No abstract text available
Text: FIN A L COM’L: -15/20, Q-25 a Advanced Micro Devices MACH445-15/20, Q-25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable
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MACH445-15/20,
100-pin
MACH435
PAL33V16"
MACH435
02S752b
QG3M451
PQR100
amd215
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equivalent io transistor 131-G
Abstract: No abstract text available
Text: BD719 BD721 BD723 BD725 _ J V SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SO T 32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
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BD719
BD721
BD723
BD725
BD439.
BD720;
BD726.
BD719
equivalent io transistor 131-G
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equivalent bd439
Abstract: D0344 b0721 B0719 BD725 B0720 BD439 BD721 BD719 BD720
Text: BD719 BD721 BD723 BD725 I SILICON EPITAXIAL-BASE POWER TRANSISTOR NPN transistor in a SOT32 plastic envelope intended fo r use in audio output and general purpose amplifier applications. BD719 is equivalent to BD439. PNP complements are BD720; 722; 724 and
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BD719
BD721
BD723
BD725
BD439.
BD720;
BD726.
BD721
equivalent bd439
D0344
b0721
B0719
BD725
B0720
BD439
BD720
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Untitled
Abstract: No abstract text available
Text: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its
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o00oo
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Untitled
Abstract: No abstract text available
Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0
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1MX16
AS4C1M16E0
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
AS4LC1M16E0
AS4LC1M16EO-70JC
42-pm
1M16E0
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SH 6770
Abstract: MC-428000A36 1J250
Text: N E C ELECTRONICS INC b lE ]> • b4S7SES 0G34434 NEC Electronics Inc. Description Pin Configuration The MC-428000A36 is a fast-page dynamic RAM mod ule organized as 8,388,608 words by 36 bits and de signed to operate from a single +5-volt power supply.
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0G34434
MC-428000A36
36-Bit
b4B7S25
003444b
MC-428000A36
0428000A36BH
1J250
IPD4217400LE
SH 6770
1J250
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BD651
Abstract: No abstract text available
Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching
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BD643;
BD645;
BD647;
BD649;
BD651_
O-220
BD644,
BD646,
BD648,
BD650
BD651
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BD722
Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and
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BD720
BD722
BD724
BD726
BD440.
BD719;
BD724.
bd722
B0719
BD440
BD719
BD726
transistor 3bs
NPN, Si, POWER TRANSISTOR, PLASTIC
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