SCH1417
Abstract: No abstract text available
Text: SCH1417 Ordering number : ENN8164 N-Channel Silicon MOSFET SCH1417 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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SCH1417
ENN8164
900mm2
SCH1417
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CPH3437
Abstract: No abstract text available
Text: CPH3437 Ordering number : EN8161A N-Channel Silicon MOSFET CPH3437 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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CPH3437
EN8161A
900mm20
PW10s,
CPH3437
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8162-2
Abstract: 8162 MCH3456
Text: MCH3456 Ordering number : EN8162A SANYO Semiconductors DATA SHEET MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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MCH3456
EN8162A
900mm2
8162-2
8162
MCH3456
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CPH3437
Abstract: No abstract text available
Text: CPH3437 注文コード No. N 8 1 6 1 A 三洋半導体データシート 半導体データシート No.N8161 をさしかえてください。 CPH3437 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長
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CPH3437
N8161
900mm2
IT08828
900mm2
IT08831
IT08832
CPH3437
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MCH3456
Abstract: No abstract text available
Text: MCH3456 Ordering number : ENN8162 MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3456
ENN8162
900mm2
MCH3456
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Untitled
Abstract: No abstract text available
Text: MCH3456 Ordering number : EN8162A MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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EN8162A
MCH3456
900mm2
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MCH3456
Abstract: MCH5826 SS05015SH
Text: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)
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MCH5826
ENN8163
MCH3456)
SS05015SH)
MCH3456
MCH5826
SS05015SH
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SCH1417
Abstract: 8164-2
Text: SCH1417 注文コード No. N 8 1 6 4 SCH1417 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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SCH1417
900mm2
IT08583
900mm2
IT08684
IT08685
SCH1417
8164-2
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CPH5807
Abstract: D2005 MCH3309 SBS004
Text: CPH5807 注文コード No. N 7 7 5 1 B 三洋半導体データシート 半導体ニューズ No. N7751A とさしかえてください。 CPH5807 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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CPH5807
N7751A
MCH3309)
SBS004
600mm2
D2005
TB-00001994
D1504PE
TA-100107
CPH5807
MCH3309
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CPH3437
Abstract: No abstract text available
Text: CPH3437 Ordering number : ENN8161 N-Channel Silicon MOSFET CPH3437 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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CPH3437
ENN8161
900mm2
CPH3437
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