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    D2 TRANSISTOR Search Results

    D2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TDA 1157

    Abstract: Schematics 5250 IC TDA 2002 tda 2200 EvalBoard TDA5250 tda 1200 FM EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES quartz oscilator nom 870 b 2nf
    Text: Wireless Components ASK/FSK 868MHz Wireless Transceiver TDA 5250 D2 Version 1.6 Specification July 2002 confidential preliminary confidential Revision History Current Version: Preliminary Specification V1.6 as of 09.07.02 describing design step D2 Previous Version: V1.5


    Original     		868MHz 100nF 0603-C TDA5250 TDA 1157 Schematics 5250 IC TDA 2002 tda 2200 EvalBoard tda 1200 FM EPCOS E SERIES INTERMEDIATE CAPACITANCE VALUES quartz oscilator nom 870 b 2nf PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LDP4803ET1G Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS V = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S1 S2 D2 D2 D1 D1 8 7 6 5 G1 4803 1 SOP-8 top view 2


    Original     		LDP4803ET1G PDF

    P2804ND5G

    Abstract: SEM 2005 p2804 niko P2804N g1id
    Text: NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS ON S2 G2 D1 V(BR)DSS S2


    Original     		P2804ND5G O-252-5 Apr-18-2005 P2804ND5G SEM 2005 p2804 niko P2804N g1id PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Latch-Up Proof, Quad SPST Switches ADG5412/ADG5413 FEATURES FUNCTIONAL BLOCK DIAGRAMS S1 D1 S2 S2 IN2 IN2 D2 D2 ADG5412 ADG5413 S3 S3 IN3 IN3 D3 D3 Relay replacement Automatic test equipment Data acquisition Instrumentation Avionics Audio and video switching


    Original     		ADG5412/ADG5413 ADG5412 ADG5413 ADG5412/ADG5413 ADG5412 ADG5413 ADG5412; 16-Lead PDF

    DSA-001

    Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
    Text: SVR1085-3.3M, Z, D2, & D3 thru SVR1085-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR


    Original     		SVR1085-3 SVR1085-12M, 12Volts SVR1085 O-254 O-254Z DSA-001 dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001 PDF

    c5v8

    Abstract: CEM9945
    Text: CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS ON =100m Ω @VGS=10V. RDS(ON)=200m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9945 c5v8 CEM9945 PDF

    CEM9926A

    Abstract: No abstract text available
    Text: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9926A 300ms CEM9926A PDF

    CEM9926

    Abstract: CEM9
    Text: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9926 300ms CEM9926 CEM9 PDF

    CEM4936

    Abstract: No abstract text available
    Text: CEM4936 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.8A , RDS ON =37m Ω RDS(ON)=55m Ω @VGS=10V. @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 High power and current handing capability.


    Original     		CEM4936 CEM4936 PDF

    CEM8207

    Abstract: No abstract text available
    Text: CEM8207 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM8207 CEM8207 PDF

    CEM8206

    Abstract: No abstract text available
    Text: CEM8206 Feb. 2003 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 6A , RDS ON =20m Ω @VGS=4.5V. RDS(ON)=30m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM8206 CEM8206 PDF

    CEM9956A

    Abstract: No abstract text available
    Text: CEM9956A March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 3.7A , RDS ON =80mΩ @VGS=10V. RDS(ON)=110m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9956A CEM9956A PDF

    CEM8933

    Abstract: No abstract text available
    Text: CEM8933 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -4.3A , RDS ON =90mΩ @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM8933 CEM8933 PDF

    CEM9935A

    Abstract: 5143 so8
    Text: CEM9935A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 5.4A , RDS ON =42mΩ @VGS=4.5V. RDS(ON)=75m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9935A CEM9935A 5143 so8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CEM4804 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.9A , RDS ON =20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM4804 PDF

    BSO207P

    Abstract: No abstract text available
    Text: BSO207P TM OptiMOS -P Power-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View


    Original     		BSO207P SIS00070 BSO207P PDF

    LA 2910

    Abstract: D2 Pack dsa001
    Text: SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 1.5 Amps 2.85 thru 12Volts LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATOR


    Original     		SVR1086-2 SVR1086-12M, 12Volts LM117 SVR1085 150oC SVR1086 O-254 LA 2910 D2 Pack dsa001 PDF

    smd diode S2 64a

    Abstract: BSO203P
    Text: BSO203P OptiMOS -P Power-Transistor TM Product Summary Feature • P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO203P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package


    Original     		BSO203P SIS00070 smd diode S2 64a BSO203P PDF

    BSO207P

    Abstract: No abstract text available
    Text: BSO207P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View


    Original     		BSO207P SIS00070 BSO207P PDF

    CEM9925

    Abstract: No abstract text available
    Text: CEM9925 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 5A , RDS ON =45m Ω @VGS=4.5V. RDS(ON)=60m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9925 CEM9925 PDF

    CEM4432

    Abstract: No abstract text available
    Text: CEM4432 PRELIMINARY Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V , -5.5A , RDS ON =40mΩ RDS(ON)=70mΩ @VGS=-10V. @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 4 S1 G1 S2 G2 High power and current handing capability.


    Original     		CEM4432 CEM4432 PDF

    BSO303P

    Abstract: No abstract text available
    Text: BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS on 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View


    Original     		BSO303P SIS00070 BSO303P PDF

    CEM2005

    Abstract: No abstract text available
    Text: CEM2005 PRELIMINARY Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES • 2 0 V , 5A Rds(on)=32iti Q @ V gs =4.5V. Di Rds(on)=43i71 Q @ V gs =2.5V. - 2 0 V , - 4 A , Rds(on)=95iti Q Di D2 D2 @ V gs =-4.5V. Rds(on)=1 25m Q @ V gs =-2.5V.


    OCR Scan     		CEM2005 32iti 43i71 95iti 125iti CEM2005 PDF

    CEM8912

    Abstract: No abstract text available
    Text: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , Rds on =28iti Q @ Vgs=1 0V. R ds (o n )=45 iti Q Di @ Vgs=4.5V. Di D2 D2 • Super high dense cell design for extremely low R ds(on>. • High power and current handing capability.


    OCR Scan     		CEM8912 28iti 45i7iQ CEM8912 PDF